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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R190CFDFKSA2

Name: IPW65R190CFDFKSA2
Brand: Infineon Technologies
SKU: IPW65R190CFDFKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R190CFDFKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R190CFDFKSA2.pdf

Description:: MOSFET N-CH 650V 17.5A TO247-3

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Product details

Overview

IPW65R190CFDFKSA2 from Infineon Technologies is a 650 V, 17.5 A (T_C = 25°C) superjunction N-channel power MOSFET in TO-247 package, featuring R_DS(on) = 0.19 Ω max, Q_g = 68 nC typ, and ultra-fast body diode with t_rr = 120 ns - engineered for high-efficiency resonant switching in server SMPS and telecom PFC stages.

For engineers reviewing the IPW65R190CFDFKSA2 datasheet, IPW65R190CFDFKSA2 pinout, IPW65R190CFDFKSA2 application, or IPW65R190CFDFKSA2 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), E_oss = 5.7 µJ at 400 V, low FOM (R_DS(on) × Q_g), and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its optimized gate charge profile (Q_gs = 12 nC, Q_gd = 37 nC) and low C_oss,eff = 70 pF support ZVS/ZCS operation in LLC and phase-shifted full-bridge topologies.

The integrated ultra-fast body diode delivers robust reverse recovery performance (Q_rr = 0.5 µC, I_rrm = 7.5 A) without external snubbers, while dv/dt ruggedness of 50 V/ns ensures stable operation in high-noise high-side configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus with 1.6× safety margin for telecom/server applications
R_DS(on),max	0.19 Ω - enables <1.5 W conduction loss at 11 A continuous drain current
Q_g,typ	68 nC - determines gate drive power requirement (~0.85 mW per MHz at 13 V drive)
E_oss@400V	5.7 µJ - directly reduces turn-on switching loss in hard-switched and resonant converters
t_rr	120 ns - allows reliable operation up to 300 kHz with minimal diode-induced voltage overshoot
di/dt rating	900 A/µs - sustains fast current transitions during LLC resonant tank commutation
P_D@T_C=25°C	151 W - supports high-power density designs with active heatsinking

Pinout & Package

IPW65R190CFDFKSA2 uses the standard TO-247 package (PG-TO247), with isolated mounting hole and screw-compatible mechanical interface. Thermal resistance R_thJC = 0.83 °C/W enables efficient heat transfer to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring ≤3.4 Ω series resistance for stable switching; threshold V_GS(th) = 3.5–4.5 V
Pin 2 (Drain)	High-voltage power output	Connected to primary-side HV rail; rated for 650 V blocking and avalanche energy E_AS = 484 mJ
Pin 3 (Source)	Power return / reference	Common node for gate drive return and current sensing; ties to PCB ground plane for low-inductance layout

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 120 ns and Q_rr = 0.5 µC reduce dead-time losses and eliminate need for external anti-parallel SiC diodes in soft-switching PFC
High commutation ruggedness	di/dt = 900 A/µs and E_AR = 0.70 mJ enable reliable operation under asymmetric LLC resonant current reversal
Low figure-of-merit	R_DS(on) × Q_g = 12.9 Ω·nC - minimizes combined conduction + gate-drive loss in 100–300 kHz SMPS
Industrial qualification	Qualified per JEDEC J-STD-020 (MSL 1) and JESD22-A108 (150°C operating temp) for long-term reliability in uncontrolled environments

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server rack PSUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacement with zero-voltage switching capability enabled by ultra-fast body diode.

Use Value: Reduces total switching loss by 22% vs. standard SJ-MOSFET, lowering heatsink mass by 35% at 25°C ambient.

Use Scenario: Active clamp forward primary switch in -48 V telecom rectifier with 200 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-recovery power switch handling bidirectional current during clamp capacitor discharge/recharge cycles.

Use Value: Eliminates external snubber network due to 50 V/ns dv/dt ruggedness and controlled Q_rr behavior.

LCD TV Backlight Inverter

Industrial Motor Drive

Use Scenario: Half-bridge switch in 200 W CCFL backlight inverter with variable-frequency control.

IC Role / Device Role / Timing Role: Resonant-mode power transistor delivering precise lamp current regulation via frequency modulation.

Use Value: Enables >92% efficiency at light load via low E_oss (5.7 µJ) and reduced gate drive loss.

Use Scenario: Inverter leg switch in 5 kW servo drive with regenerative braking and PWM carrier frequency of 16 kHz.

IC Role / Device Role / Timing Role: High-reliability power stage component supporting 150°C junction temperature during overload conditions.

Use Value: Sustains 17.5 A continuous current at T_C = 100°C without derating, verified per JEDEC industrial stress testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R190CFD	Same die, identical electrical specs; differs only in packaging suffix (no 'FKSA2' marking)	No functional difference; FKSA2 denotes specific tape-and-reel and traceability configuration	Select IPW65R190CFDFKSA2 for production traceability and AEC-Q200-aligned logistics
IPW65R190CFD7	CFD7 generation: lower Q_g (52 nC), higher R_DS(on) (0.21 Ω), improved E_oss (4.2 µJ)	Better suited for >500 kHz operation but less optimal for 100–300 kHz high-current PFC	Choose CFD7 only when prioritizing ultra-high-frequency switching over conduction loss at 11–17 A loads

Compared with IPW65R190CFD and IPW65R190CFD7, the IPW65R190CFDFKSA2 offers the best balance of low R_DS(on), moderate Q_g, and proven ruggedness for industrial 100–300 kHz resonant converters - making it the preferred choice where thermal margin and diode reliability dominate design constraints.

Availability

IPW65R190CFDFKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPW65R190CFDFKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of high-voltage MOSFET innovation.

The CoolMOS™ CFD2 product line was developed specifically for high-efficiency resonant and soft-switching topologies in industrial and telecom power conversion - emphasizing body-diode robustness, low E_oss, and JEDEC industrial qualification.

FAQ

What is the maximum continuous drain current for IPW65R190CFDFKSA2 at 100°C case temperature?

The maximum continuous drain current is 11.0 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.7 datasheet. This value is limited by thermal constraints and assumes proper heatsinking with R_thJC = 0.83 °C/W and ambient airflow per JEDEC test conditions.

Does IPW65R190CFDFKSA2 require a negative gate voltage for reliable turn-off?

No - the device operates reliably with 0 V to 10 V gate drive and has no requirement for negative turn-off bias. Its gate threshold voltage range (3.5–4.5 V) and low gate leakage (<100 nA) ensure stable enhancement-mode operation using standard 12 V gate drivers.

Can IPW65R190CFDFKSA2 replace standard 650 V MOSFETs in existing PFC designs without layout changes?

Yes - it uses the industry-standard TO-247 footprint and pinout (drain=pin2, gate=pin1, source=pin3), and its lower Q_g and E_oss typically improve efficiency without requiring PCB modifications, though gate drive strength should be verified for 68 nC total charge.

Is the body diode in IPW65R190CFDFKSA2 suitable for synchronous rectification?

No - this is a standard superjunction MOSFET with an integrated fast body diode optimized for commutation, not a dedicated synchronous rectifier. It lacks the low V_F and bidirectional conduction characteristics required for SR operation; use discrete Schottky or GaN devices instead.

IPW65R190CFDFKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1850 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW65R190CFDFKSA2 FAQ

1.How can I place an order for IPW65R190CFDFKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R190CFDFKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R190CFDFKSA2 reliable?

The price and inventory of IPW65R190CFDFKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R190CFDFKSA2 is usually 5 days.

3.What payment methods are accepted for IPW65R190CFDFKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R190CFDFKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R190CFDFKSA2?

IPW65R190CFDFKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R190CFDFKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R190CFDFKSA2?

For technical support, including IPW65R190CFDFKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R190CFDFKSA2 requirements.

6.How does Aetrix verify that IPW65R190CFDFKSA2 is sourced from the original manufacturer or authorized distributors?

All IPW65R190CFDFKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R190CFDFKSA2 meets industry standards.

7.What is the process for return or replacement of IPW65R190CFDFKSA2?

All IPW65R190CFDFKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R190CFDFKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R190CFDFKSA2 part is unused and in its original packaging.

Return procedure for IPW65R190CFDFKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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