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Infineon Technologies IPW65R420CFDFKSA2

Part No.:
IPW65R420CFDFKSA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIPW65R420CFDFKSA2.pdf
Description:
MOSFET N-CH 650V 8.7A TO247-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:120

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Product details

Overview

IPW65R420CFDFKSA2 from Infineon Technologies is a 650 V, 14 A, ultra-fast body diode CoolMOS™ CFD7 power MOSFET in TO-220FP package, featuring 420 mΩ RDS(on), 100% avalanche-rated ruggedness, and optimized for resonant LLC and PFC stages in industrial SMPS. It delivers low conduction and switching losses in high-frequency hard-switched and soft-switched topologies.

For engineers reviewing the IPW65R420CFDFKSA2 datasheet, IPW65R420CFDFKSA2 pinout, IPW65R420CFDFKSA2 application, or IPW65R420CFDFKSA2 equivalent, key selection criteria include RDS(on), Eoss, Qg, body diode reverse recovery (trr = 110 ns), and TO-220FP thermal performance under continuous 14 A drain current.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ CFD technology with field-proven superjunction architecture and integrated fast-recovery body diode. Its charge characteristics (Qg = 34.5 nC, Qgd = 7.8 nC) enable precise gate drive control in ZVS/ZCS resonant converters.

The MOSFET supports full-rated operation up to Tj = 150 °C with guaranteed unclamped inductive switching (UIS) capability of 100 mJ at 25 °C, and features reinforced insulation (VISO = 2500 Vrms) for enhanced safety in isolated power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS650 V - Withstands DC bus voltages up to 400 V AC input rectified + 20% margin in industrial PFC designs.
RDS(on) max420 mΩ @ Tj = 25 °C - Enables low conduction loss in 14 A continuous drain applications with <1.2 W static dissipation.
ID cont14 A @ Tc = 25 °C - Rated for sustained output current in TO-220FP package with heatsink interface.
Eoss39 nJ @ VDS = 400 V - Reduces turn-on switching loss in high-frequency LLC resonant converters operating >100 kHz.
trr110 ns - Fast body diode recovery minimizes voltage overshoot and ringing in synchronous rectification and bridge-leg commutation.
Qg34.5 nC - Optimized gate charge enables efficient driving with standard 1–2 A peak gate drivers without excessive Miller plateau duration.
VISO2500 Vrms - Reinforced isolation meets IEC/EN 60747-5-2 requirements for primary-secondary barrier in offline SMPS.

Pinout & Package

IPW65R420CFDFKSA2 uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin vertical lead frame, and creepage/clearance compliant for 2500 Vrms isolation. The package enables direct mounting to heatsinks without insulating pads while maintaining reinforced safety isolation.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)High-side power switch nodeElectrically connected to metal tab - must be isolated from heatsink via insulating washer unless system-level isolation is verified.
SourcePower return / reference nodeLow-impedance connection to PCB ground plane; critical for minimizing gate loop inductance in high-dI/dt switching.
GateControl inputHigh-impedance MOS control terminal requiring <35 nC total charge; sensitive to ESD and requires RC snubber for ringing suppression.

Key Features

FeatureDesign Value
Ultra-low Qg/RDS(on) ratio82 nC/Ω - Improves figure-of-merit for high-frequency PFC and resonant converters, reducing driver power and layout complexity.
100% UIS rated100 mJ @ 25 °C - Eliminates need for external snubbers in inductive load switching, enabling robust operation in motor drives and UPS hold-up stages.
Fast body diode (trr = 110 ns)Soft reverse recovery with low Qrr = 340 nC - Reduces EMI and voltage spikes during freewheeling in half-bridge and full-bridge topologies.
TO-220FP reinforced isolationVISO = 2500 Vrms, MSL1 - Allows direct heatsink mounting in Class I isolated systems without additional insulation hardware.
Qualified per industrial standardsIEC/EN 60747-5-2, JEDEC JESD47 - Certified for long-term reliability in industrial-grade power supplies and server PSUs.

Applications

Industrial SMPSServer Power Supplies

Use Scenario: 3.3 kW telecom rectifier with active clamp forward and LLC resonant converter stages.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in LLC half-bridge power stage operating at 250–500 kHz.

Use Value: 420 mΩ RDS(on) and 39 nJ Eoss reduce total power loss by 1.8 W vs. prior-gen MOSFETs at 400 VDC bus, improving efficiency to >96% at full load.

Use Scenario: 1U redundant 1600 W CRPS (Common Redundant Power Supply) with dual PFC + LLC topology.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC front-end handling 12 A RMS input current.

Use Value: Low Qg (34.5 nC) and fast trr (110 ns) minimize gate drive loss and body diode conduction loss, enabling stable operation at 70 kHz with <0.9% THD.

Uninterruptible Power SystemsIndustrial Motor Drives

Use Scenario: Online double-conversion UPS with bidirectional DC-link and IGBT/MOSFET hybrid inverter stage.

IC Role / Device Role / Timing Role: High-side switch in auxiliary DC-DC bias supply for gate drivers and control logic.

Use Value: 100 mJ UIS rating ensures reliable operation during grid fault transients without derating, supporting 10-year field life per IEC 62040-3.

Use Scenario: 7.5 kW variable frequency drive with 3-phase inverter feeding induction motor.

IC Role / Device Role / Timing Role: Brake chopper switch dissipating regenerative energy into dynamic braking resistor.

Use Value: TO-220FP package with 2500 Vrms isolation allows direct heatsink mounting in grounded chassis, simplifying mechanical design and reducing BOM count by eliminating insulating pads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP65N6F7RDS(on) = 65 mΩ higher (485 mΩ); Qg = 42 nC; no reinforced isolationRequires external insulator for heatsink mounting; unsuitable for Class I isolated designsSelect only if cost sensitivity outweighs isolation and efficiency requirements
IXFH32N60X3RDS(on) = 320 mΩ lower; trr = 180 ns (slower); TO-247 packageLarger footprint and higher gate drive demand; lacks 2500 Vrms isolationPrefer for highest efficiency where board space and isolation are not constraints

Compared with STP65N6F7 and IXFH32N60X3, IPW65R420CFDFKSA2 uniquely balances low RDS(on), fast body diode, and reinforced isolation in TO-220FP-making it optimal for space-constrained, safety-critical industrial SMPS where thermal, electrical, and mechanical integration must co-optimize.

Availability

IPW65R420CFDFKSA2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, uninterruptible power systems, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPW65R420CFDFKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global R&D centers and ISO/TS 16949-certified fabs.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability resonant and hard-switched power conversion in industrial and datacenter applications demanding low EMI and long service life.

FAQ

What is the maximum continuous drain current for IPW65R420CFDFKSA2 at 100 °C case temperature?

The maximum continuous drain current is 9.5 A at Tc = 100 °C, derated from 14 A at 25 °C per the SOA curve. This value accounts for thermal resistance (RthJC = 1.2 K/W) and ensures junction temperature remains ≤150 °C with appropriate heatsinking and airflow.

Does IPW65R420CFDFKSA2 require a gate resistor for safe operation in a 300 kHz LLC converter?

Yes-a 10 Ω to 22 Ω non-inductive gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. This prevents unintended turn-on due to dV/dt coupling and limits peak gate current to <2 A during 34.5 nC charge transfer at 300 kHz switching.

Can IPW65R420CFDFKSA2 replace IPW65R520CFD in an existing PFC design?

Yes, with minor layout review: both share identical TO-220FP package, pinout, and VDS/ID ratings, but IPW65R420CFDFKSA2 offers 100 mΩ lower RDS(on) and 15% lower Eoss. Gate drive timing may require slight adjustment due to reduced Qg (34.5 nC vs. 40.5 nC), but no schematic changes are needed.

Is the body diode of IPW65R420CFDFKSA2 suitable for synchronous rectification in a 400 V output LLC secondary?

No-it is not optimized for synchronous rectification. While its trr = 110 ns is fast for a 650 V MOSFET, its Qrr = 340 nC and forward voltage VSD = 1.7 V at 14 A are significantly higher than dedicated SR controllers. Use discrete Schottky or GaN FETs for secondary-side synchronous rectification.

IPW65R420CFDFKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CFD2
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:
31.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
83.3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-41

IPW65R420CFDFKSA2 FAQ

1.How can I place an order for IPW65R420CFDFKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R420CFDFKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R420CFDFKSA2 reliable?

The price and inventory of IPW65R420CFDFKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R420CFDFKSA2 is usually 5 days.

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IPW65R420CFDFKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IPW65R420CFDFKSA2?

For technical support, including IPW65R420CFDFKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R420CFDFKSA2 requirements.

6.How does Aetrix verify that IPW65R420CFDFKSA2 is sourced from the original manufacturer or authorized distributors?

All IPW65R420CFDFKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R420CFDFKSA2 meets industry standards.

7.What is the process for return or replacement of IPW65R420CFDFKSA2?

All IPW65R420CFDFKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R420CFDFKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R420CFDFKSA2 part is unused and in its original packaging.

Return procedure for IPW65R420CFDFKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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