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Infineon Technologies IPW80R280P7XKSA1

Part No.:
IPW80R280P7XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIPW80R280P7XKSA1.pdf
Description:
MOSFET N-CH 800V 17A TO247-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:252

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Product details

Overview

IPW80R280P7XKSA1 from Infineon is an 800V superjunction N-channel CoolMOS™ P7 power MOSFET in PG-TO247-3 package, featuring RDS(on) = 0.28 Ω (max), Qg = 36 nC (typ), VGS(th) = 3 V (typ), and integrated Zener ESD protection. It delivers high-voltage hard/soft-switching performance in flyback and PFC stages for LED lighting, low-power adapters, and solar auxiliary supplies.

For engineers reviewing the IPW80R280P7XKSA1 datasheet, IPW80R280P7XKSA1 pinout, IPW80R280P7XKSA1 application, or IPW80R280P7XKSA1 equivalent, key selection criteria include its 800V VDS, low 0.28 Ω RDS(on) at 10 V drive, 3 V gate threshold with ±0.5 V variation, 4 µJ Eoss at 500 V, and JEDEC-qualified industrial reliability.

Technical Context

This device implements Infineon's 7th-generation superjunction architecture optimized for high-voltage switching efficiency and gate drive simplicity. Its low Ciss (1200 pF) and Coss (20 pF) reduce switching losses, while the 3 V VGS(th) enables compatibility with standard 3.3 V/5 V controllers and simplifies gate driver selection.

The integrated Zener-protected gate structure and ±0.5 V VGS(th) tolerance improve production yield and parallel operation stability. Its 1.2 °C/W RthJC and 101 W Ptot at TC = 25°C support thermally constrained industrial and consumer power designs without forced cooling.

Key Specifications

ParameterValue and Actual Design Meaning
VDS800 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC link with margin.
RDS(on), max0.28 Ω @ 10 V, 25°C - Enables 17 A continuous drain current with <1.5 W conduction loss at 7.2 A.
Qg, typ36 nC - Reduces gate drive power and allows use of low-cost, low-current drivers (e.g., 1 A peak).
Eoss @ 500 V4 µJ - Low output charge minimizes turn-off energy loss in high-frequency flyback and resonant topologies.
VGS(th), typ3 V with ±0.5 V variation - Ensures reliable turn-on with 3.3 V logic-level controllers and tight manufacturing binning.
ESD Class (HBM)Class 2 (≥2 kV) - Integrated Zener diode eliminates need for external gate protection in assembly and handling.
Tj max150 °C - Rated for continuous operation in sealed enclosures and high-ambient industrial environments.

Pinout & Package

Package: PG-TO247-3 (plastic TO-247 variant with isolated tab); thermally enhanced through-hole mounting; tab is Drain (Pin 2), enabling direct heatsink connection without insulating pad when used as high-side switch.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputLow-impedance gate terminal; 1 Ω internal RG supports stable paralleling with minimal gate ringing.
Pin 2 (Drain)High-voltage power outputConnected to MOSFET die drain and metal tab; electrically and thermally coupled to heatsink.
Pin 3 (Source)Power return / referenceCommon source node for gate drive return path and current sensing; requires low-inductance PCB layout.

Key Features

FeatureDesign Value
Best-in-class RDS(on) × Eoss FOMEnables >100 kHz flyback operation with <0.5% efficiency penalty vs. SiC in sub-100 W LED drivers.
VGS(th) = 3 V ± 0.5 VEliminates need for gate voltage boosters in 3.3 V microcontroller-based control circuits.
Integrated Zener ESD protectionReduces BOM count by removing external 12–15 V gate clamp diodes in adapter PCB layouts.
JEDEC-qualified for industrial temp rangeValidated for 150 °C junction operation over full lifetime-no derating required in 85 °C ambient designs.
Optimized for parallel operationLow VGS(th) spread and matched dynamic parameters allow direct paralleling with ferrite-bead-gated layout.

Applications

LED Lighting DriverUSB-C Charger Primary Switch

Use Scenario: 40 W constant-voltage flyback converter powering commercial LED troffers with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side high-voltage switching transistor operating in discontinuous conduction mode (DCM) at 65–100 kHz.

Use Value: 0.28 Ω RDS(on) and 4 µJ Eoss achieve >91% efficiency at full load while maintaining thermal rise <45 K on 2-layer FR4.

Use Scenario: 65 W GaN-assisted hybrid adapter where IPW80R280P7XKSA1 serves as main PFC boost switch alongside a GaN half-bridge.

IC Role / Device Role / Timing Role: High-efficiency 800 V boost switch in continuous conduction mode (CCM) PFC stage, switching at 65 kHz.

Use Value: Low Qg (36 nC) and Ciss (1200 pF) minimize gate drive loss and enable single-driver control with <1.2 W driver dissipation.

Solar Auxiliary Power SupplyIndustrial 24 V AUX Converter

Use Scenario: 15 W isolated flyback supplying control power to string inverters operating in outdoor enclosures (−40 to +85 °C ambient).

IC Role / Device Role / Timing Role: Main switching transistor in hard-switched flyback with synchronous rectification on secondary side.

Use Value: 150 °C Tj rating and ±0.5 V VGS(th) tolerance ensure startup reliability and stable regulation across full temperature range.

Use Scenario: 30 W non-isolated buck-derived auxiliary supply for PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: High-side switch in active-clamp forward topology delivering regulated 24 V from 400 V DC bus.

Use Value: 1.2 °C/W RthJC and 101 W Ptot allow direct bolt-down heatsinking, eliminating fan requirement in sealed IP65 enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP80NF80RDS(on) = 0.08 Ω (lower), but VDS = 800 V, Qg = 120 nC (3.3× higher), no integrated ZenerHigher conduction loss at light load due to higher Coss; requires external gate protectionPreferable only where ultra-low RDS(on) dominates over switching loss and ESD robustness.
IPP65R280C7Same 650 V rating (not 800 V); RDS(on) = 0.28 Ω; Qg = 32 nC; CoolMOS™ C7 generationNot rated for 400 V DC link in universal-input designs; limited to 380 V max busSelect only for fixed-input 230 VAC-only systems where 650 V rating suffices and cost is critical.

Compared with STP80NF80 and IPP65R280C7, IPW80R280P7XKSA1 uniquely balances 800 V rating, low 36 nC gate charge, and ±0.5 V VGS(th) tolerance-enabling compact, robust, and controller-compatible designs in universal-input LED, adapter, and solar auxiliary supplies.

Availability

IPW80R280P7XKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C charger primary switches, and solar auxiliary power supplies requiring stable component supply, long-term industrial lifecycle support, and JEDEC-qualified reliability.

Supply support for IPW80R280P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ P7 series targets high-efficiency, high-reliability offline power conversion-specifically engineered for universal-input flyback, PFC, and auxiliary supplies in consumer, lighting, and renewable energy applications.

FAQ

What is the maximum continuous drain current for IPW80R280P7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 10.6 A at TC = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating from the 17 A value at 25°C case temperature and ensures safe operation within the 150°C maximum junction temperature limit under typical heatsink conditions.

Does IPW80R280P7XKSA1 require external gate protection against ESD?

No. The device integrates a Zener diode for gate-source ESD protection rated to HBM Class 2 (≥2 kV), eliminating the need for external clamping components in standard assembly and handling environments per JEDEC JESD22-A114.

Can IPW80R280P7XKSA1 be paralleled with identical units without gate resistors?

Parallel operation is supported but requires individual gate ferrite beads or separate totem-pole drivers per unit, as stated in the datasheet's application note. Direct paralleling without gate isolation risks oscillation due to trace inductance mismatch, even with tight VGS(th) binning.

What is the typical reverse recovery charge (Qrr) of the body diode?

The typical reverse recovery charge is 15 µC, measured at VR = 400 V, IF = 3.6 A, and diF/dt = 50 A/µs (Table 7). This value reflects the stored charge in the epitaxial layer and impacts snubber design and switching loss in hard-commutated topologies.

IPW80R280P7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 500 V
FET Feature:
-
Power Dissipation (Max):
101W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-41

IPW80R280P7XKSA1 FAQ

1.How can I place an order for IPW80R280P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW80R280P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW80R280P7XKSA1 reliable?

The price and inventory of IPW80R280P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW80R280P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW80R280P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW80R280P7XKSA1 transactions.

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IPW80R280P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW80R280P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW80R280P7XKSA1?

For technical support, including IPW80R280P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW80R280P7XKSA1 requirements.

6.How does Aetrix verify that IPW80R280P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW80R280P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW80R280P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW80R280P7XKSA1?

All IPW80R280P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW80R280P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW80R280P7XKSA1 part is unused and in its original packaging.

Return procedure for IPW80R280P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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