Infineon Technologies IPW95R130PFD7XKSA1

Overview

IPW95R130PFD7XKSA1 from Infineon Technologies is a 950 V, 130 mΩ superjunction N-channel MOSFET with integrated ultra-fast body diode, designed for high-efficiency resonant topologies including LLC and ZVS in industrial SMPS and lighting power supplies. It delivers 36.5 A continuous drain current at T_C = 25 °C, 141 nC total gate charge, and industry-leading 1.10 µC reverse recovery charge (Q_rr) at 400 V.

For engineers reviewing the IPW95R130PFD7XKSA1 datasheet, IPW95R130PFD7XKSA1 pinout, IPW95R130PFD7XKSA1 application, or IPW95R130PFD7XKSA1 equivalent, key selection criteria include hard commutation robustness (1300 A/µs di_F/dt), low E_oss (9.5 µJ @ 500 V), tight V_GS(th) tolerance (±0.5 V), and PG-TO247-3 package thermal performance (R_thJC = 0.55 °C/W).

Technical Context

This CoolMOS™ PFD7 device employs superjunction technology optimized for soft-switching operation, featuring a fully integrated fast-recovery body diode with 153 ns t_rr and 1300 A/µs di_F/dt capability-enabling reliable zero-voltage switching in high-frequency LLC converters. Its 3 V gate threshold voltage and minimal ±0.5 V variation simplify gate drive design across temperature and process corners.

The MOSFET's dynamic characteristics are tuned for reduced switching losses: C_iss = 4170 pF, C_oss = 53 pF, and Co(er) = 88 pF yield low E_oss, while Q_g = 141 nC and Q_gd = 43 nC support efficient turn-on/turn-off control under 13 V gate drive. It is fully qualified per JEDEC JESD47 for industrial applications up to 150 °C junction temperature.

Key Specifications

Pinout & Package

IPW95R130PFD7XKSA1 uses the PG-TO247-3 package with isolated tab (drain-connected). The case is electrically connected to Pin 2 (Drain), enabling direct heatsink mounting with no insulating washer required when drain is at system ground or common potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW95R120CFD7 and IPP95R130PFD7, IPW95R130PFD7XKSA1 offers optimal balance of low Q_rr, moderate R_DS(on), and superior thermal performance-making it the preferred choice for thermally demanding, high-frequency industrial SMPS where ZVS reliability and heatsink integration are critical.

Availability

IPW95R130PFD7XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, lighting power supplies, and telecom rectifier modules requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IPW95R130PFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and qualification infrastructure.

The CoolMOS™ PFD7 product line targets high-efficiency, high-reliability switched-mode power supplies in lighting and industrial applications-specifically engineered to replace older superjunction families with enhanced body diode performance and tighter parameter distributions.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation in an LLC converter?

The datasheet specifies RG = 5.3 Ω for characterization at 400 V VDD and 25.1 A ID. For ZVS optimization, a gate resistor between 2.2 Ω and 4.7 Ω is recommended to reduce turn-on delay (td(on) = 25 ns) while maintaining sufficient Miller immunity. Values above 6.8 Ω increase td(off) (118 ns) and risk incomplete turn-off before resonant voltage reversal, risking shoot-through.

Does the internal body diode support bidirectional current in synchronous rectification configurations?

Yes-the integrated body diode is rated for continuous forward current IS = 26 A at TC = 25 °C and pulse current IS,pulse = 150 A. Its 1300 A/µs diF/dt and 153 ns trr enable controlled bidirectional conduction in half-bridge LLC secondaries, though external synchronous rectifier controllers are still required to drive the gate for true synchronous operation.

Can IPW95R130PFD7XKSA1 be mounted directly to an aluminum heatsink without electrical isolation?

Yes-the PG-TO247-3 package features a drain-connected metal tab. When the drain node is at system ground or common potential (e.g., low-side switch configuration), direct mounting to an aluminum heatsink is permitted and recommended for optimal thermal performance (RthJC = 0.55 °C/W). Isolation is required only if drain is at high voltage relative to heatsink potential.

How does the 3 V gate threshold voltage affect gate driver selection in noisy industrial environments?

A 3 V VGS(th) with ±0.5 V variation means the device turns on reliably between 2.5 V and 3.5 V. To avoid false triggering from noise, gate drivers must provide ≥12 V VGS for full enhancement and maintain <1 V peak-to-peak noise on the gate loop. TI UCC27611 or Infineon 1EDN751x drivers are validated for this threshold range and support the required 141 nC Qg drive capability.