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Infineon Technologies IPWS65R022CFD7AXKSA1

Name: IPWS65R022CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPWS65R022CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPWS65R022CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPWS65R022CFD7AXKSA1.pdf

Description:: AUTOMOTIVE_COOLMOS PG-TO247-3

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Product details

Overview

IPWS65R022CFD7AXKSA1 from Infineon is a 650 V, 22 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Q_rr (2 µC), and 1300 A/µs di_F/dt rating. It is designed for high-efficiency PFC and resonant DC-DC stages in on-board chargers and bidirectional converters operating up to 475 V battery systems.

For engineers reviewing the IPWS65R022CFD7AXKSA1 datasheet, IPWS65R022CFD7AXKSA1 pinout, IPWS65R022CFD7AXKSA1 application, or IPWS65R022CFD7AXKSA1 equivalent, key selection criteria include R_DS(on) × Q_g FOM (234 nC total gate charge), E_oss (29.5 µJ @ 400 V), avalanche ruggedness (582 mJ), and AEC-Q101 qualification for automotive power conversion.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with optimized cell pitch and trench geometry to achieve ultra-low R_DS(on) × Q_g and R_DS(on) × E_oss figures. Its integrated fast-recovery body diode (t_rr = 260 ns, Q_rr = 2 µC) enables ZVS operation in phase-shift full-bridge and LLC topologies without external SiC diodes.

The MOSFET features 100% single-pulse avalanche testing (E_AS = 582 mJ), dv/dt ruggedness of 120 V/ns (low-side), and thermal resistance R_thJC = 0.28 °C/W - enabling high-power density designs in constrained thermal environments typical of traction inverters and OBC modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports DC-link voltages up to 475 V in automotive battery systems with margin for transients and ripple.
R_DS(on),max	22 mΩ @ T_j = 25°C - enables low conduction loss in high-current PFC and DC-DC primary switches.
Q_g,typ	234 nC - determines gate drive power and switching speed; compatible with standard 13 V gate drivers at >100 kHz.
E_oss @ 400 V	29.5 µJ - directly impacts turn-on loss in hard-switched and resonant topologies; lower than prior CFD generations.
di_F/dt	1300 A/µs - enables fast, controlled body diode commutation in synchronous rectification and bidirectional switching.
I_D,pulse	495 A - supports short-duration overload conditions in automotive transient scenarios (e.g., regenerative braking).
T_j,max	150 °C - allows operation in under-hood environments with active cooling and thermal derating per SOA curves.

Pinout & Package

Package: PG-TO247-3 - thermally enhanced through-hole package with isolated tab (Drain-connected), rated for 446 W power dissipation at T_C = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires <20 V absolute max rating and low-inductance layout to minimize ringing.
Pin 2 (Drain / Tab)	High-voltage power terminal	Electrically connected to metal tab; must be mounted to heatsink with electrically isolating thermal interface material.
Pin 3 (Source)	Reference node for gate drive and current sensing	Serves as return path for load current and gate drive loop; critical for minimizing common-source inductance in high-di/dt operation.

Key Features

Feature	Design Value
Integrated fast body diode	t_rr = 260 ns, Q_rr = 2 µC - eliminates need for parallel SiC Schottky diodes in resonant LLC half-bridge legs.
AEC-Q101 qualified	Qualified for automotive powertrain applications including on-board chargers and DC-DC converters.
Ultra-low figure-of-merit	R_DS(on) × Q_g = 5.15 Ω·nC - reduces combined conduction and switching losses across 65–150 kHz PFC operating range.
100% avalanche tested	E_AS = 582 mJ - ensures robustness against voltage spikes during fault conditions without derating.
Low E_oss	29.5 µJ @ 400 V - minimizes capacitive turn-on loss in ZVS phase-shift full-bridge topologies.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost PFC front-end in 11 kW bi-directional OBC converting AC grid to 400–475 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 22 mΩ R_DS(on) and 234 nC Q_g enable >98.5% efficiency at full load while maintaining thermal margin under 45 °C ambient.

Use Scenario: Primary-side switch in 3.3 kW LLC resonant transformer stage stepping down 400 V DC to 48 V for 48 V mild-hybrid systems.

IC Role / Device Role / Timing Role: Half-bridge switch leveraging integrated body diode for ZVS during dead-time commutation.

Use Value: 1300 A/µs di_F/dt and 260 ns t_rr ensure clean zero-voltage switching across 200–500 kHz variable-frequency operation.

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Traction Inverter Auxiliary Power Supply

Use Scenario: Dual-active-bridge (DAB) converter enabling energy flow between 400 V battery and 400 V grid interface in V2G applications.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in both primary and secondary bridges.

Use Value: Symmetrical 495 A pulse rating and AEC-Q101 qualification support bidirectional 10 kVA power transfer with <1.5% conversion loss.

Use Scenario: Isolated auxiliary power supply (APS) generating 12 V/5 V for gate drivers and MCU in main traction inverter.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter operating at 250 kHz with tight regulation.

Use Value: Low E_oss (29.5 µJ) and high dv/dt ruggedness (120 V/ns) prevent false triggering and improve light-load efficiency over legacy SJ MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R027CFD7XKSA1	R_DS(on),max = 27 mΩ; Q_g = 200 nC; same package and AEC-Q101 qualification.	Higher conduction loss but lower gate charge - better suited for higher-frequency (>150 kHz) PFC where switching loss dominates.	Select when optimizing for switching loss over conduction loss in compact, air-cooled OBC designs.
STW65N60DM6	600 V rating; R_DS(on),max = 24 mΩ; Q_g = 210 nC; not AEC-Q101 qualified.	Lacks automotive qualification and integrated fast diode - requires external diode for resonant topologies.	Consider only for industrial/non-automotive 400 V DC-DC where cost sensitivity outweighs qualification and integration needs.

Compared with IPW65R027CFD7XKSA1, this part delivers lower conduction loss at the expense of higher gate drive energy; versus STW65N60DM6, it provides automotive reliability, integrated diode functionality, and superior E_oss for resonant operation - making it the preferred choice for production-grade OBC and bidirectional DC-DC.

Availability

IPWS65R022CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and automotive auxiliary power supplies requiring stable component supply, AEC-Q101 compliance, and high-voltage switching performance.

Supply support for IPWS65R022CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7A product line - engineered specifically for automotive high-voltage power conversion, emphasizing robustness, integrated body diode performance, and qualification for traction-related subsystems.

FAQ

Is IPWS65R022CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states that "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." Thermal runaway risk and undefined safe operating area in linear region make it unsuitable for analog amplification or constant-current regulation applications.

What is the maximum recommended gate resistor value for ZVS operation in an LLC half-bridge?

Based on measured turn-off delay (198 ns) and fall time (6 ns) with RG = 1.8 Ω, the maximum recommended gate resistor for reliable ZVS in LLC is 4.7 Ω. Higher values increase switching time and reduce dead-time margin, risking hard switching and elevated E_oss-related losses at high frequency.

Does the PG-TO247-3 package require electrically isolating thermal paste?

Yes. Pin 2 (Drain) is internally connected to the metal tab, which serves as the primary thermal path. To avoid shorting the Drain to heatsink ground, electrically isolating thermal interface material (e.g., ceramic-filled pads or silicone-based insulating grease) must be used during mounting.

How does the 1300 A/µs di_F/dt rating impact PCB layout requirements?

This rating demands minimized source loop inductance: keep source trace length <5 mm, use wide copper pours, and place Kelvin source connection directly at the source bond wire exit point. Layouts exceeding 10 nH source inductance will cause voltage overshoot >100 V during diode commutation, risking device failure.

IPWS65R022CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 96A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 58.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 2.91mA

Gate Charge (Qg) (Max) @ Vgs:: 234 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 11659 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-31

IPWS65R022CFD7AXKSA1 FAQ

1.How can I place an order for IPWS65R022CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPWS65R022CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPWS65R022CFD7AXKSA1 reliable?

The price and inventory of IPWS65R022CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPWS65R022CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPWS65R022CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPWS65R022CFD7AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPWS65R022CFD7AXKSA1?

IPWS65R022CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPWS65R022CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPWS65R022CFD7AXKSA1?

For technical support, including IPWS65R022CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPWS65R022CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPWS65R022CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPWS65R022CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPWS65R022CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPWS65R022CFD7AXKSA1?

All IPWS65R022CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPWS65R022CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPWS65R022CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPWS65R022CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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