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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPZ40N04S53R9ATMA1

Name: IPZ40N04S53R9ATMA1
Brand: Infineon Technologies
SKU: IPZ40N04S53R9ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPZ40N04S53R9ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IPZ40N04S53R9ATMA1.pdf

Description:: MOSFET_(20V 40V) PG-TSDSON-8

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Product details

Overview

IPZ40N04S53R9ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™-5 family, rated for 40 V V_DS, 3.9 mΩ R_DS(on) at V_GS = 10 V and I_D = 20 A, and qualified to AEC-Q101 with 175 °C maximum junction temperature. It delivers high-current switching (89 A chip-limited continuous drain current) in engine control units, battery disconnect switches, and 12 V automotive power distribution systems.

For engineers reviewing the IPZ40N04S53R9ATMA1 datasheet, IPZ40N04S53R9ATMA1 pinout, IPZ40N04S53R9ATMA1 application, or IPZ40N04S53R9ATMA1 equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, robust avalanche capability (14 mJ single-pulse), MSL1 reflow compatibility, and validated performance under extended thermal and electrical stress per automotive qualification requirements.

Technical Context

This device employs a trench-gate silicon process optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (2.2–3.4 V) ensures reliable turn-on with standard microcontroller logic, while the 2.23 Ω gate resistance supports controlled dV/dt and EMI management in high-frequency PWM applications.

The integrated body diode exhibits 0.8–1.1 V forward voltage at 20 A and 25 °C, with 27.1 ns reverse recovery time and 16.0 nC Q_rr, enabling efficient synchronous rectification and freewheeling in DC-DC converters and motor drivers without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on)	3.9 mΩ @ V_GS=10 V, I_D=20 A - Enables <1 W conduction loss at 20 A, reducing heatsink requirements in space-constrained modules.
I_D (continuous)	89 A (chip-limited) - Supports high-current loads such as starter relays, HVAC blowers, and ADAS camera power rails.
E_AS	14 mJ - Withstands inductive energy spikes during switch-off in solenoid and motor control without failure.
T_j max	175 °C - Allows operation in under-hood environments near engines and exhaust components.
Q_g	19.2–25.0 nC - Determines gate driver power requirement; enables <100 ns switching transitions with 2 A peak gate drivers.
C_iss	1306–1737 pF - Impacts high-frequency gate drive impedance and Miller effect sensitivity in 100–500 kHz SMPS designs.

Pinout & Package

Package: PG-TSDSON-8-33 (exposed drain pad, 5 mm × 6 mm, 0.65 mm pitch, MSL1 rated to 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Common source connection; pins 1–3 and 5–7 are internally bonded to reduce source inductance and improve current sharing.
4	Gate (G)	Single gate input; requires low-impedance drive path to minimize ringing and ensure clean turn-on/turn-off.
8	Drain (D)	Exposed thermal pad - must be soldered to PCB copper pour for thermal conduction and electrical connection to high-side or low-side drain node.

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard requirements	Extended reliability testing including HTGB, HTRB, and UHAST ensures >15-year field life in safety-critical vehicle subsystems.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress validation, guaranteeing robustness against inductive kickback in motor and solenoid drives.
MSL1 reflow rating	Withstands lead-free reflow profiles up to 260 °C peak, eliminating moisture-related popcorning during automated assembly.
Green product (RoHS compliant)	Meets EU Directive 2011/65/EU with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE - suitable for global OEM supply chains.

Applications

Engine Control Unit (ECU) Power Switching

12 V Battery Disconnect Switch

Use Scenario: High-side switching of fuel injector drivers and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Low-side or high-side power switch controlling pulsed 12 V loads with 1–10 ms on-time and 100 Hz–1 kHz repetition.

Use Value: 3.9 mΩ R_DS(on) minimizes I²R heating during sustained injection pulses, supporting compact packaging within sealed ECU housings.

Use Scenario: Isolation of auxiliary battery banks during vehicle start-stop cycles or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET used in active battery disconnect units (BDUs) with reverse polarity protection.

Use Value: 175 °C T_j max and 14 mJ E_AS enable safe interruption of >50 A fault currents without thermal runaway or avalanche failure.

ADAS Camera Power Management

Automotive HVAC Blower Driver

Use Scenario: Voltage-regulated 5 V/3.3 V power rail generation for radar and camera modules using buck converter topology.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-efficiency 200–500 kHz buck stage, replacing Schottky diodes.

Use Value: Body diode V_SD = 0.8–1.1 V and t_rr = 27.1 ns allow >95% efficiency at 3 A output, reducing thermal load on small PCB areas.

Use Scenario: PWM-controlled DC motor drive for cabin air blower fans in HVAC systems.

IC Role / Device Role / Timing Role: Low-side switch modulating motor current at 20–100 Hz with 0–100% duty cycle.

Use Value: 89 A continuous current rating supports peak startup torque (up to 60 A) without derating, even at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 2.2 mΩ R_DS(on), 120 A I_D, same PG-TSDSON-8 package but higher gate charge (34 nC)	Better conduction loss but slower switching; suited for lower-frequency (<50 kHz) high-current loads	Prefer when minimizing conduction loss dominates over switching loss and gate drive capability is ≥3 A.
ON Semiconductor NTMFS4C09NT1G	40 V, 4.0 mΩ R_DS(on), 72 A I_D, same footprint but not AEC-Q101 qualified	Limited to non-safety-critical infotainment or lighting; lacks extended automotive qualification	Select only for cost-sensitive, non-automotive-qualified subsystems where AEC-Q101 is not mandated.

Compared with STL220N4F7AG and NTMFS4C09NT1G, IPZ40N04S53R9ATMA1 offers balanced R_DS(on)/Q_g trade-off, full AEC-Q101 compliance, and proven 175 °C operation-making it optimal for safety-relevant, thermally demanding automotive power stages.

Availability

IPZ40N04S53R9ATMA1 is available at Aetrix Electronics and suitable for engine control units, battery disconnect switches, and ADAS camera power supplies requiring stable component supply across multi-year automotive production programs.

Supply support for IPZ40N04S53R9ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-reliability 12 V vehicle systems requiring low R_DS(on), extended temperature operation, and rigorous qualification for functional safety applications.

FAQ

What is the maximum allowable gate-source voltage for IPZ40N04S53R9ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10–15 V for turn-on and actively pulled to ≤ –5 V for fast, low-loss turn-off in high-side configurations.

Does IPZ40N04S53R9ATMA1 require a gate resistor, and if so, what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. Based on measured gate resistance (2.23 Ω) and typical gate charge (22 nC), a 5–10 Ω series resistor is recommended for 1–5 A gate drivers. Lower values increase switching speed but raise EMI risk; higher values reduce losses but extend transition times and increase switching loss.

Can IPZ40N04S53R9ATMA1 be used in parallel configurations?

Yes, but with strict layout and gate drive symmetry. The device features positive temperature coefficient for R_DS(on), enabling current sharing. Parallel use requires matched gate resistors, identical trace lengths, shared thermal plane, and individual gate routing to avoid common-impedance coupling. Derating to 80% of total current capacity is advised.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad (Pin 8) is electrically connected to the MOSFET's drain terminal and must be soldered directly to a dedicated drain copper pour. It is not isolated; using it as a thermal pad only without electrical connection will cause catastrophic failure due to floating high-voltage potential and thermal overload.

IPZ40N04S53R9ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 89A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1737 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-33

IPZ40N04S53R9ATMA1 FAQ

1.How can I place an order for IPZ40N04S53R9ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPZ40N04S53R9ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPZ40N04S53R9ATMA1 reliable?

The price and inventory of IPZ40N04S53R9ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZ40N04S53R9ATMA1 is usually 5 days.

3.What payment methods are accepted for IPZ40N04S53R9ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPZ40N04S53R9ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPZ40N04S53R9ATMA1?

IPZ40N04S53R9ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPZ40N04S53R9ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPZ40N04S53R9ATMA1?

For technical support, including IPZ40N04S53R9ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZ40N04S53R9ATMA1 requirements.

6.How does Aetrix verify that IPZ40N04S53R9ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPZ40N04S53R9ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZ40N04S53R9ATMA1 meets industry standards.

7.What is the process for return or replacement of IPZ40N04S53R9ATMA1?

All IPZ40N04S53R9ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZ40N04S53R9ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPZ40N04S53R9ATMA1 part is unused and in its original packaging.

Return procedure for IPZ40N04S53R9ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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