Infineon Technologies IPZ60R040C7XKSA1

Overview

IPZ60R040C7XKSA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in PG-TO247-4 package with Kelvin source configuration, featuring 40 mΩ max R_DS(on), 107 nC typical gate charge, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency primary-side switch in hard- and soft-switching topologies including PFC and LLC resonant converters for server, telecom, and solar inverters.

For engineers reviewing the IPZ60R040C7XKSA1 datasheet, IPZ60R040C7XKSA1 pinout, IPZ60R040C7XKSA1 application, or IPZ60R040C7XKSA1 equivalent, key selection criteria include its 4-pin Kelvin source layout for reduced gate loop inductance, 211 A pulsed drain current capability, and industry-leading R_DS(on) × E_oss figure-of-merit enabling >0.5% full-load efficiency gain at 100 kHz versus conventional 3-pin packages.

Technical Context

This CoolMOS™ C7 device implements a superjunction (SJ) structure optimized for high-voltage switching with enhanced dv/dt immunity (120 V/ns) and low switching losses. Its 4-pin TO-247 package separates driver source (Pin 3) from power source (Pin 2), decoupling gate drive return path from high-current source return to minimize parasitic inductance-induced oscillation.

The transistor delivers best-in-class R_DS(on) × Q_g (4.28 Ω·nC) and R_DS(on) × E_oss (0.504 mJ·Ω), validated at V_DD = 400 V, I_D = 24.9 A, and f = 250 kHz. Body diode reverse recovery parameters-Q_rr = 9.2 µC, t_rr = 460 ns, di/dt = 480 A/µs-are specified under controlled 100 A/µs commutation conditions.

Key Specifications

Pinout & Package

IPZ60R040C7XKSA1 uses the PG-TO247-4 package-a 4-pin variant of TO-247 with isolated Kelvin source terminal to eliminate source inductance impact on gate control loop stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW60R041C7 and STW62N60M2, IPZ60R040C7XKSA1 provides superior high-frequency stability via Kelvin source, lowest R_DS(on) × E_oss, and highest dv/dt tolerance-making it the optimal choice for space-constrained, high-efficiency 100+ kHz power supplies requiring long-term reliability.

Availability

IPZ60R040C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply across multi-year production cycles.

Supply support for IPZ60R040C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current for IPZ60R040C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 32 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal derating from the 50 A value at 25°C case temperature and ensures safe operation within the 150°C maximum junction temperature limit under sustained load conditions.

Does IPZ60R040C7XKSA1 require a negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V to 13 V gate drive and does not require negative gate bias. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 4.0 V, and the gate-source voltage rating supports ±20 V static and ±30 V dynamic operation, making it compatible with standard unipolar gate drivers.

Can IPZ60R040C7XKSA1 be paralleled with identical units without external gate resistors?

No. Parallel operation requires individual gate resistors (typically 3.3 Ω) and, for optimal dynamic current sharing, ferrite beads on each gate line or separate totem-pole drivers-as explicitly recommended in the datasheet's application note section. Omitting these leads to unequal current distribution and thermal runaway.

What is the thermal resistance from junction to case (R_thJC) for this MOSFET?

The junction-to-case thermal resistance is 0.55 °C/W, measured under standard mounting conditions with thermal interface material and 60 Ncm screw torque. This value enables accurate junction temperature estimation using T_j = T_C + (P_tot × R_thJC) for thermal design validation in high-power applications.