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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPZ60R099C7XKSA1

Name: IPZ60R099C7XKSA1
Brand: Infineon Technologies
SKU: IPZ60R099C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPZ60R099C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IPZ60R099C7XKSA1.pdf

Description:: MOSFET N-CH 600V 22A TO247-4

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Product details

Overview

IPZ60R099C7XKSA1 from Infineon Technologies is a 600V superjunction N-channel CoolMOS™ C7 power MOSFET in PG-TO247-4 package, featuring 99 mΩ max R_DS(on), 42 nC typical gate charge, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency primary-side switch in hard- and soft-switching topologies including PFC and LLC resonant converters for server and telecom SMPS.

For engineers reviewing the IPZ60R099C7XKSA1 datasheet, IPZ60R099C7XKSA1 pinout, IPZ60R099C7XKSA1 application, or IPZ60R099C7XKSA1 equivalent, key selection criteria include its Kelvin-source 4-pin layout for reduced gate loop inductance, low R_DS(on)×E_oss figure-of-merit, and industrial-grade JEDEC qualification up to 150°C junction temperature.

Technical Context

This device implements Infineon's CoolMOS™ C7 superjunction architecture with optimized charge balancing for reduced switching losses. Its 4-pin TO-247 package separates driver source (Pin 3) from power source (Pin 2), enabling precise gate control and minimizing source inductance-induced oscillation during fast switching.

The MOSFET delivers 83 A pulsed drain current and supports 400 V bus operation with 97 mJ single-pulse avalanche energy rating. Its 350 ns reverse recovery time and 400 A/µs body diode di/dt capability support robust commutation in high-frequency resonant stages without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V maximum - supports 400 V DC-link operation with 50 V margin for voltage spikes in telecom/server PFC stages
R_DS(on),max	99 mΩ at T_j = 150°C - enables lower conduction loss than prior C6 generation in continuous 36 A operation
Q_g,typ	42 nC at V_DD = 400 V - reduces gate drive power requirement and allows use with standard 1–2 A peak gate drivers
E_oss@400V	4.95 µJ - contributes to low turn-on loss in ZVS/ZCS LLC converters operating above 100 kHz
dv/dt ruggedness	120 V/ns - prevents false turn-on during high-slew-rate switching in high-density half-bridge layouts
Body diode di/dt	400 A/µs - sustains fast commutation in synchronous rectification and bidirectional topologies without oscillation

Pinout & Package

Package: PG-TO247-4 - thermally enhanced 4-pin through-hole package with isolated Kelvin source terminal for accurate gate control and minimized source inductance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main power drain connection	High-current path to heatsink; electrically tied to metal tab for low thermal resistance (R_thJC = 1.135 °C/W)
Pin 2 (Power Source)	Power return path for main current	Carries full load current to ground plane; separate from driver source to avoid ground bounce in high-di/dt operation
Pin 3 (Driver Source)	Kelvin source reference for gate driver	Provides clean, low-inductance gate return path - critical for stable 120 V/ns switching and EMI reduction
Pin 4 (Gate)	Control input for MOSFET channel	Receives gate drive signal; requires <5.0 V plateau voltage for reliable turn-on with minimal Miller effect

Key Features

Feature	Design Value
4-pin Kelvin source configuration	Eliminates source inductance impact on gate drive loop, enabling stable 120 V/ns switching without external ferrite beads
R_DS(on) × E_oss FOM	Best-in-class figure-of-merit for 600 V MOSFETs - directly enables >0.5% full-load efficiency gain vs. 3-pin TO-247 equivalents at 100 kHz
Industrial-grade qualification	JEDEC J-STD-20/JESD22 compliant - rated for continuous operation from –55°C to +150°C junction temperature
Hard- and soft-switching optimized	Low Q_gd/Q_g ratio (14/42 nC) and controlled body diode recovery reduce switching loss in both PFC boost and LLC resonant stages

Applications

Server Power Supply PFC Stage

Telecom Rectifier LLC Resonant Converter

Use Scenario: Active front-end boost converter in 3 kW redundant server PSU operating at 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side high-side switch in continuous conduction mode (CCM) PFC stage.

Use Value: 99 mΩ R_DS(on) and 4.95 µJ E_oss reduce total losses by 1.2 W per device versus C6 generation, improving system efficiency from 95.8% to 96.3% at full load.

Use Scenario: Half-bridge primary switch in 2.5 kW telecom rectifier using asymmetric LLC topology with variable frequency control.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-enabled main switch with 350 ns body diode recovery supporting 200–500 kHz operation.

Use Value: 400 A/µs di/dt rating and 120 V/ns dv/dt ruggedness prevent shoot-through and false triggering during rapid resonant transitions under transient load steps.

Solar Inverter DC-DC Stage

Industrial UPS High-Frequency Inverter

Use Scenario: Isolated DC-DC stage in string solar inverter converting 1000 V PV input to 400 V intermediate bus with galvanic isolation.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 150 kHz.

Use Value: Kelvin-source layout minimizes gate loop inductance, allowing clean 150 kHz ZVS transition without added gate damping resistors or ferrites.

Use Scenario: High-efficiency inverter stage in 10 kVA industrial UPS with dual-conversion architecture and 98% target efficiency.

IC Role / Device Role / Timing Role: High-side switch in synchronous rectified forward converter with active clamp reset.

Use Value: 97 mJ single-pulse avalanche energy rating ensures robustness against line surges and inductive kickback during battery switchover events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	Same die, PG-TO247-3 package - lacks Kelvin source; higher effective gate inductance limits dv/dt to 80 V/ns	Acceptable for fixed-frequency hard-switched PFC but not recommended for >100 kHz LLC where gate loop stability is critical	Select only when cost sensitivity outweighs need for ultra-fast switching integrity and layout simplicity is prioritized
STW62N60M2	600 V MDmesh™ M2 MOSFET; 105 mΩ R_DS(on), 51 nC Q_g, no Kelvin source; lower dv/dt rating (75 V/ns)	Valid for telecom PFC below 75 kHz but exhibits higher switching loss and reduced noise immunity in high-density designs	Consider for legacy designs migrating from ST's M2 platform where footprint compatibility and supply chain continuity are primary concerns

Compared with IPW60R099C7 and STW62N60M2, IPZ60R099C7XKSA1 provides superior gate control fidelity via Kelvin source, enabling higher-frequency operation with lower EMI and improved efficiency-especially in multi-kW resonant converters where switching integrity directly impacts thermal design and reliability.

Availability

IPZ60R099C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply, long-term lifecycle support, and industrial-grade thermal performance.

Supply support for IPZ60R099C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the purpose of the 4th pin (Driver Source) in IPZ60R099C7XKSA1?

The Driver Source (Pin 3) provides a dedicated low-inductance return path for the gate driver circuit, decoupling it from the high-current power source (Pin 2). This separation eliminates source inductance-induced voltage drop during fast switching, preventing false turn-on and enabling stable operation at 120 V/ns dv/dt. It is essential for achieving clean gate waveforms in high-frequency LLC and PFC designs without additional gate damping components.

How does IPZ60R099C7XKSA1 improve efficiency over previous CoolMOS™ generations?

It achieves up to 0.5% higher full-load efficiency at 100 kHz compared to 3-pin equivalents due to three key improvements: (1) 20% lower R_DS(on)×E_oss figure-of-merit, (2) reduced Q_gd/Q_g ratio for faster turn-off with less Miller-induced delay, and (3) Kelvin-source layout that lowers effective gate loop inductance, reducing switching loss and gate drive power consumption.

Can IPZ60R099C7XKSA1 be paralleled with identical units?

Yes, but with specific layout requirements: gate traces must be individually routed with matched length and impedance, and ferrite beads (or separate totem-pole drivers) are recommended on each gate to suppress oscillation. The Kelvin-source configuration improves current sharing accuracy, but thermal coupling between devices must be minimized via symmetric heatsinking and equal mounting torque (60 Ncm) to maintain balanced R_DS(on) across temperature gradients.

Is IPZ60R099C7XKSA1 suitable for automotive applications?

No - it is qualified for industrial-grade operation per JEDEC J-STD-20/JESD22 (–55°C to +150°C), but lacks AEC-Q101 qualification, automotive-specific screening, or extended temperature validation required for automotive powertrain or ADAS systems. It is intended for computing, telecom, solar, and industrial UPS applications where industrial reliability standards apply.

IPZ60R099C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-247-4

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 490µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1819 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IPZ60R099C7XKSA1 FAQ

1.How can I place an order for IPZ60R099C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPZ60R099C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPZ60R099C7XKSA1 reliable?

The price and inventory of IPZ60R099C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZ60R099C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPZ60R099C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPZ60R099C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPZ60R099C7XKSA1?

IPZ60R099C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPZ60R099C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPZ60R099C7XKSA1?

For technical support, including IPZ60R099C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZ60R099C7XKSA1 requirements.

6.How does Aetrix verify that IPZ60R099C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPZ60R099C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZ60R099C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPZ60R099C7XKSA1?

All IPZ60R099C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZ60R099C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPZ60R099C7XKSA1 part is unused and in its original packaging.

Return procedure for IPZ60R099C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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