Infineon Technologies IPZ65R019C7XKSA1

Overview

IPZ65R019C7XKSA1 from Infineon Technologies is a 650 V, 19 mΩ superjunction MOSFET in the CoolMOS™ C7 family, designed for high-frequency hard-switching and PFC stages. It delivers 496 A pulsed drain current, 215 nC total gate charge, and 27 µJ output switching energy at 400 V - enabling high-efficiency server, telecom, and solar power supplies.

For engineers reviewing the IPZ65R019C7XKSA1 datasheet, IPZ65R019C7XKSA1 pinout, IPZ65R019C7XKSA1 application, or IPZ65R019C7XKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, dv/dt ruggedness (100 V/ns), body diode dI/dt capability (70 A/µs), and PG-TO247-4 package with driver source pin for gate control stability.

Technical Context

This CoolMOS™ C7 device implements a superjunction structure optimized for reduced R_DS(on) × E_oss and R_DS(on) × Q_g, supporting >100 kHz operation in continuous conduction mode (CCM) PFC and resonant LLC topologies. Its 700 V V_DS rating at T_j,max ensures margin over 650 V nominal bus voltage under transient stress.

The integrated driver source pin enables precise gate loop control, minimizing parasitic inductance-induced oscillation during fast switching. The body diode exhibits 760 ns reverse recovery time and 20 µC Q_rr at 400 V, supporting moderate-speed commutation without external snubbing in well-designed layouts.

Key Specifications

Pinout & Package

IPZ65R019C7XKSA1 uses the PG-TO247-4 package - a 4-pin variant of TO-247 with separate driver source (Kelvin source) terminal to decouple power and signal return paths, reducing gate loop inductance and improving switching stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW65N60DM6 and IXFH60N60X3, IPZ65R019C7XKSA1 provides superior R_DS(on) × Q_g FOM and guaranteed dv/dt immunity - making it optimal for high-density, high-efficiency PFC and soft-switched converters where layout-induced noise and thermal constraints dominate.

Availability

IPZ65R019C7XKSA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and solar inverter DC-DC converters requiring stable component supply and long-term industrial-grade availability.

Supply support for IPZ65R019C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC conversion systems - specifically engineered to reduce conduction and switching losses in 65–300 kHz PFC and isolated DC-DC topologies.

FAQ

What is the purpose of the DRIVER SOURCE (S_K) pin?

The DRIVER SOURCE (S_K) pin is a Kelvin connection that provides a dedicated low-inductance return path for the gate driver circuit. It isolates gate drive current from high di/dt power return currents, preventing voltage drop across source inductance from distorting the effective V_GS. This maintains stable switching behavior and suppresses oscillation during fast transitions - especially critical in high-frequency PFC and LLC designs.

Can the SOURCE and DRIVER SOURCE pins be interchanged?

No - the SOURCE and DRIVER SOURCE pins are not interchangeable. Swapping them invalidates the Kelvin sensing function and introduces gate loop inductance into the driver return path. This causes gate voltage undershoot/overshoot, erratic switching, and potential device failure. The datasheet explicitly warns that exchange may lead to malfunction; physical pin marking "S" (SOURCE) and "S_K" (DRIVER SOURCE) must be observed during PCB layout.

How does the 100 V/ns dv/dt rating impact system design?

The 100 V/ns dv/dt ruggedness rating means the device can withstand rapid voltage transients across its drain-source terminals without unintended turn-on. This eliminates the need for external gate clamping circuits or large gate resistors in applications like telecom rectifiers or motor drives with high transformer leakage. Designers gain layout flexibility and reduced BOM count while ensuring robust operation under worst-case ringing conditions.

Is IPZ65R019C7XKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low E_oss (27 µJ at 400 V) and fast turn-off characteristics (106 ns t_d(off), 5 ns t_f) make it well-suited for ZVS applications such as phase-shifted full-bridge and LLC resonant converters. The reduced output capacitance energy lowers the required resonant tank energy to achieve ZVS across wide load ranges, improving light-load efficiency and enabling higher operating frequencies without excessive switching loss penalties.