Infineon Technologies IPZ65R065C7XKSA1
- Part No.:
- IPZ65R065C7XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
IPZ65R065C7XKSA1.pdf
- Description:
- MOSFET N-CH 650V 33A TO247-4
- Quantity:
- Payment:

- Shipping:

Inventory:145
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Product details
Overview
IPZ65R065C7XKSA1 from Infineon Technologies is a 650 V, 65 mΩ superjunction MOSFET in the CoolMOS™ C7 family, designed for high-frequency hard-switching and PFC stages. It delivers 145 A pulsed drain current, 64 nC total gate charge, and 8 µJ output switching energy at 400 V - enabling high-efficiency server power supplies and telecom rectifiers.
For engineers reviewing the IPZ65R065C7XKSA1 datasheet, IPZ65R065C7XKSA1 pinout, IPZ65R065C7XKSA1 application, or IPZ65R065C7XKSA1 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), body diode di/dt rating (60 A/µs), RDS(on) temperature stability, driver-source pin implementation, and industrial-grade JEDEC qualification.
Technical Context
This CoolMOS™ C7 device employs superjunction architecture to achieve best-in-class figure-of-merit (RDS(on) × Eoss = 0.52 µJ·Ω and RDS(on) × Qg = 4.16 nC·Ω), enabling higher switching frequencies without efficiency penalty. Its dedicated driver-source (Kelvin source) pin decouples gate drive loop from power source return, reducing gate oscillation and improving turn-on control.
The MOSFET supports robust unclamped inductive switching with 171 mJ single-pulse avalanche energy and maintains stable RDS(on) up to 150 °C junction temperature. Reverse diode recovery parameters - Qrr = 10 µC, trr = 800 ns, Irrm = 30 A - are optimized for soft-recovery in continuous conduction mode PFC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - rated blocking voltage for 400 V DC-link PFC and 48 V–54 V telecom rectifier applications |
| RDS(on) max @ 150°C | 65 mΩ - ensures low conduction loss at full thermal load in enclosed server PSUs |
| Qg typ | 64 nC - enables efficient gate driving with standard 1–2 A peak drivers at >100 kHz |
| Eoss @ 400 V | 8 µJ - reduces turn-off loss and eases snubber design in hard-switched topologies |
| dv/dt ruggedness | 100 V/ns - prevents false turn-on during fast voltage transients in high-dV/dt environments |
| Body diode di/dt | 60 A/µs - supports reliable commutation in critical-mode and continuous-mode PFC |
| Tj max | 150 °C - qualified for industrial-grade operation per JEDEC JESD22-A108 |
Pinout & Package
IPZ65R065C7XKSA1 is housed in PG-TO247-4 package - a 4-pin variant of TO-247 with isolated Kelvin source terminal for precise gate control. The package features copper leadframe, low-inductance internal construction, and 0.73 °C/W junction-to-case thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DRAIN | Main power output terminal | Connected to high-side switch node; carries full load current and withstands 650 V blocking |
| SOURCE | Power source return path | High-current return for main conduction path; separate from Kelvin source |
| GATE | Control input | Receives gate drive signal; requires <20 V absolute max rating |
| SOURCE (Kelvin) | Sense/reference return for gate drive | Provides low-noise gate reference point; must be routed separately from power source to avoid noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Driver-source (Kelvin) pin | Eliminates source inductance impact on gate waveform, enabling clean, predictable switching edge control |
| Best-in-class RDS(on) × Eoss | 0.52 µJ·Ω - directly reduces combined conduction + switching losses in 65–100 kHz PFC designs |
| Enhanced dv/dt ruggedness | 100 V/ns rating - allows reliable operation in high-slew-rate LLC resonant converters and fast-rise ZVS circuits |
| Industrial-grade qualification | JEDEC J-STD-020 / JESD22-A108 compliant - validated for 15-year field life in telecom and server power systems |
| Low Qgd/Qg ratio | 21 nC / 64 nC = 0.33 - improves Miller immunity and reduces risk of spurious turn-on during high dV/dt transitions |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
Use Scenario: Active front-end boost converter operating at 65–100 kHz in 1U/2U redundant AC-DC units. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost topology. Use Value: 65 mΩ RDS(on) and 8 µJ Eoss enable >96% efficiency at 3 kW while maintaining thermal margin below 125 °C case temperature. | Use Scenario: -48 V distributed power system rectifier with hot-swap and OR-ing capability. IC Role / Device Role / Timing Role: Primary switching transistor in isolated forward or half-bridge DC-DC stage. Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during bus fault transients; 145 A pulse rating supports 200 % overload for 10 ms. |
| UPS Inverter Half-Bridge | Solar String Inverter DC-DC Stage |
Use Scenario: 3 kVA online UPS with bidirectional battery interface and pure sine-wave output. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectified half-bridge inverter leg. Use Value: Body diode di/dt = 60 A/µs and Qrr = 10 µC ensure clean zero-voltage switching transition under high-current reverse recovery. | Use Scenario: MPPT DC-DC boost stage in string inverters handling 1000 V PV input and 600–800 V DC-link. IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter with phase-shifted PWM. Use Value: 650 V VDS rating provides 20 % margin over 800 V DC-link; RDS(on) stability at 150 °C ensures derating-free operation in desert ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N60DM6 | 600 V rating, 55 mΩ RDS(on), no Kelvin source, 72 nC Qg | Limited to ≤400 V DC-link; lacks driver-source pin for high-frequency gate control | Prefer where cost sensitivity outweighs need for >100 kHz operation or strict dv/dt immunity |
| IXFH60N60X3 | 600 V rating, 52 mΩ RDS(on), standard 3-pin TO-247, 105 nC Qg | No Kelvin source; higher gate charge increases driver loss and limits usable frequency range | Choose when legacy layout compatibility and proven reliability in 50–75 kHz designs are prioritized |
Compared with STW65N60DM6 and IXFH60N60X3, IPZ65R065C7XKSA1 offers superior 650 V rating, lower switching loss via reduced Eoss, and Kelvin-source precision - making it optimal for next-generation high-density, high-frequency PFC and DC-DC converters where thermal headroom and layout noise immunity are critical.
Availability
IPZ65R065C7XKSA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and solar string inverter DC-DC stages requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for IPZ65R065C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.
The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC and DC-DC conversion in computing, telecom, UPS, and renewable energy systems - emphasizing low-loss switching, thermal robustness, and system-level ease of use.
FAQ
What is the purpose of the fourth (Kelvin source) pin on IPZ65R065C7XKSA1?
The fourth pin is a dedicated Kelvin source terminal that provides a low-inductance, noise-immune reference for the gate driver circuit. It isolates gate return current from high di/dt power source current, preventing voltage spikes across source inductance that could cause false turn-on or oscillation - especially critical above 50 kHz switching.
Can IPZ65R065C7XKSA1 replace older CoolMOS™ C3 or C6 devices in existing designs?
Yes, but only with layout and gate drive review. While pin-compatible in PG-TO247-4, C7 offers lower Qg and Eoss, requiring reduced gate resistor values and tighter gate loop control. Its higher dv/dt ruggedness allows relaxed snubber design, but the Kelvin source must be properly routed - unlike C3/C6's 3-pin packages.
What is the maximum recommended gate resistor value for reliable operation?
For standard 13 V gate drive with 2 A peak driver, RG should not exceed 5.3 Ω to meet datasheet timing specs (td(off) = 72 ns). Lower values (2–3 Ω) improve switching speed but increase EMI; higher values (>8 Ω) risk incomplete turn-on due to elevated Miller plateau voltage and may compromise dv/dt immunity in noisy environments.
Is the body diode suitable for synchronous rectification in LLC resonant converters?
No - the body diode has 800 ns reverse recovery time and 10 µC Qrr, making it unsuitable for synchronous rectification above ~100 kHz. It is optimized for controlled commutation in PFC and hard-switched topologies, not zero-voltage switching recovery. External Schottky or SiC diodes are required for true synchronous rectification.
IPZ65R065C7XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C7
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 17.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 850µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3020 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 171W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4
IPZ65R065C7XKSA1 FAQ
1.How can I place an order for IPZ65R065C7XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPZ65R065C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPZ65R065C7XKSA1 reliable?
The price and inventory of IPZ65R065C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZ65R065C7XKSA1 is usually 5 days.
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5.How can I obtain technical support or documentation for IPZ65R065C7XKSA1?
For technical support, including IPZ65R065C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZ65R065C7XKSA1 requirements.
6.How does Aetrix verify that IPZ65R065C7XKSA1 is sourced from the original manufacturer or authorized distributors?
All IPZ65R065C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZ65R065C7XKSA1 meets industry standards.
7.What is the process for return or replacement of IPZ65R065C7XKSA1?
All IPZ65R065C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZ65R065C7XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPZ65R065C7XKSA1 part is unused and in its original packaging.
Return procedure for IPZ65R065C7XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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