Infineon Technologies IPZA60R037P7XKSA1

Overview

IPZA60R037P7XKSA1 from Infineon Technologies is a 600 V, 37 mΩ superjunction MOSFET in PG-TO247-4-3 package with 4-pin source-sense configuration. It delivers 76 A continuous drain current at T_C = 25°C, 121 nC total gate charge, and 900 A/µs body diode commutation speed. Designed for high-efficiency PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPZA60R037P7XKSA1 datasheet, IPZA60R037P7XKSA1 pinout, IPZA60R037P7XKSA1 application, or IPZA60R037P7XKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, ESD robustness (>2 kV HBM), low E_oss (12.4 µJ @ 400 V), and validated hard-switching ruggedness per JEDEC JESD22-A108.

Technical Context

This CoolMOS™ P7 device implements a superjunction structure optimized for 600 V operation with integrated Kelvin source (Pin 3) enabling precise gate drive and reduced switching losses. Its 0.49 °C/W junction-to-case thermal resistance supports high-power density designs up to 255 W at T_C = 25°C.

The MOSFET features a 5.2 V gate plateau voltage, 37 nC Q_gd, and 27 nC Q_gs, enabling fast, controllable turn-on/turn-off with minimal ringing. Body diode reverse recovery is characterized at 300 ns t_rr, 4.3 µC Q_rr, and 28.4 A I_rrm under 100 A/µs diF/dt stress.

Key Specifications

Pinout & Package

PG-TO247-4-3 package with isolated Kelvin source terminal for accurate gate control and minimized source inductance impact on switching behavior.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R037P7 and STW62N60M2, IPZA60R037P7XKSA1 uniquely combines Kelvin-source precision, 900 A/µs diF/dt ruggedness, and >2 kV ESD-making it optimal for high-reliability, high-frequency resonant converters where gate control fidelity and body diode stress are critical.

Availability

IPZA60R037P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS systems, and high-brightness LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IPZA60R037P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ P7 product line targets high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems, emphasizing reduced system size, improved thermal performance, and simplified EMI compliance through intrinsic low ringing and fast switching.

FAQ

What is the purpose of the fourth pin (Pin 3) in the PG-TO247-4-3 package?

Pin 3 is the Kelvin source (driver source) terminal, physically separated from the main power source (Pin 2). It provides a dedicated low-inductance return path for the gate driver, eliminating the voltage drop caused by power current flowing through source bond wires or PCB traces. This ensures accurate gate-to-source voltage control during fast switching, critical for minimizing overshoot and improving ZVS behavior in resonant topologies.

How does the 900 A/µs diF/dt rating impact system-level reliability?

The 900 A/µs body diode commutation speed rating confirms the device's ability to withstand rapid current reversal without failure during hard commutation-such as in LLC half-bridge dead-time transitions. This value was verified per JEDEC JESD22-A108 test conditions and directly correlates to reduced risk of dynamic avalanche, localized heating, and premature wear-out in high-frequency, high-current bridge applications.

Can IPZA60R037P7XKSA1 replace older CoolMOS™ P6 devices without layout changes?

No-direct replacement requires verification of gate drive strength, snubber design, and thermal interface due to lower Q_g (121 nC vs. ~140 nC for P6), faster switching, and Kelvin-source routing. Layout must isolate Pin 3 from high-current source paths. Thermal design benefits from lower R_thJC (0.49 °C/W), but gate loop inductance must be <1 nH to avoid oscillation.

Is this MOSFET qualified for automotive applications?

No-IPZA60R037P7XKSA1 is qualified only for industrial applications per JEDEC JESD22-A108, JESD22-A103, and JESD22-A110. It lacks AEC-Q101 qualification, automotive-grade screening, or extended temperature validation beyond –55°C to +150°C junction range. Automotive designs require Infineon's AEC-Q101-qualified CoolMOS™ C7 or CE series.