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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPZA60R080P7XKSA1

Name: IPZA60R080P7XKSA1
Brand: Infineon Technologies
SKU: IPZA60R080P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPZA60R080P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IPZA60R080P7XKSA1.pdf

Description:: MOSFET N-CH 600V 37A TO247-4

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Product details

Overview

IPZA60R080P7XKSA1 from Infineon Technologies is a 600 V, 80 mΩ superjunction N-channel power MOSFET in PG-TO247-4-3 package with integrated Kelvin source (Driver Source Pin 3), optimized for high-efficiency PFC and LLC resonant converters. It delivers 37 A continuous drain current at T_C = 25°C, 51 nC total gate charge, and 900 A/µs body diode commutation speed - enabling robust hard-switching operation in server PSUs and telecom rectifiers.

For engineers reviewing the IPZA60R080P7XKSA1 datasheet, IPZA60R080P7XKSA1 pinout, IPZA60R080P7XKSA1 application, or IPZA60R080P7XKSA1 equivalent, key selection criteria include its Kelvin-source layout for reduced gate loop inductance, 650 V V_DS rating for surge margin, low E_oss (5.5 µJ @ 400 V), and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure with optimized charge balance, delivering R_DS(on) × A < 1 Ω·mm² and enabling higher power density than P6-generation predecessors. Its gate plateau voltage of 5.2 V and low Q_gd/Q_g ratio (15/51 nC) support clean turn-on/turn-off with minimal Miller-induced oscillation.

The PG-TO247-4-3 package separates power and driver source terminals to decouple high-current switching paths from gate drive loops - reducing parasitic inductance and improving dv/dt immunity (80 V/ns). Body diode ruggedness is validated at 900 A/µs diF/dt and 118 mJ single-pulse avalanche energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Provides 50 V headroom above 600 V nominal rating for line surge and ringing margin in offline SMPS
R_DS(on) max	80 mΩ @ T_j = 150°C - Enables 37 A continuous conduction with <1.1 W conduction loss at 25 A
Q_g typ	51 nC - Supports efficient 100–300 kHz switching with moderate gate driver strength (e.g., 1–2 A peak)
E_oss	5.5 µJ @ 400 V - Reduces turn-on switching loss in ZVS/ZCS topologies like LLC resonant converters
diF/dt max	900 A/µs - Allows reliable body diode commutation in hard-switched PFC without snubbers
R_thJC	0.97 °C/W - Enables thermal design with ≤125°C junction rise at 129 W dissipation under forced convection
V_GS(th)	3.5 V typ - Ensures stable enhancement-mode turn-on with standard 5–12 V gate drivers

Pinout & Package

PG-TO247-4-3 package features four leads: Drain (Pin 1), Power Source (Pin 2), Driver Source (Pin 3), and Gate (Pin 4). The Kelvin-source configuration isolates the driver return path from high-current source routing to minimize gate loop inductance and improve switching control fidelity.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main high-voltage power terminal	Connected to bulk capacitor or transformer primary; carries full switched current and withstands 650 V transients
Pin 2 (Power Source)	High-current source return	Carries load current to ground or bus rail; routed on PCB power plane with minimal inductance
Pin 3 (Driver Source)	Gate drive reference node	Provides dedicated low-inductance return for gate driver IC; eliminates source inductance-induced Miller turn-on risk
Pin 4 (Gate)	Control input	Receives PWM signal; requires series gate resistor (typically 3.3–10 Ω) to dampen ringing and control dV/dt

Key Features

Feature	Design Value
Kelvin-source 4-pin TO-247	Separates gate drive return from power source path, reducing effective gate loop inductance by >50% vs. 3-pin variants
Hard-commutation ruggedness	Validated 900 A/µs diF/dt and 118 mJ single-pulse avalanche energy - enables snubberless PFC stage design
Low E_oss & C_oss	5.5 µJ E_oss and 37 pF C_oss @ 400 V - minimizes turn-on loss and improves ZVS behavior in resonant topologies
ESD robustness	>2 kV HBM - ensures handling safety and board-level reliability during assembly and field operation
JEDEC industrial qualification	Qualified per JESD47 and JESD22-A108 - supports 150°C continuous operation and 10-year lifetime in server/telecom environments

Applications

Server Power Supply (PFC Stage)

Telecom Rectifier (LLC Resonant)

Use Scenario: Active front-end boost converter in 3 kW 80 PLUS Titanium server PSU operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC, handling 37 A RMS input current.

Use Value: Low R_DS(on) and E_oss reduce conduction + switching losses by ~18% vs. P6 generation, enabling 96.5% efficiency at full load.

Use Scenario: Primary-side switch in half-bridge LLC resonant DC-DC converter for 48 V telecom distribution.

IC Role / Device Role / Timing Role: High-frequency ZVS-switched power transistor synchronized to resonant tank frequency (150–350 kHz).

Use Value: 900 A/µs diF/dt and low C_oss ensure reliable zero-voltage turn-on across wide load range, eliminating body diode conduction loss.

LCD TV Backlight Inverter

Industrial UPS Inverter Stage

Use Scenario: Half-bridge inverter driving CCFL or LED backlight with 50–100 kHz PWM dimming.

IC Role / Device Role / Timing Role: Fast-switching high-side/low-side switch managing 20–30 A peak load currents with tight dead-time control.

Use Value: Low Q_g (51 nC) and gate plateau voltage (5.2 V) allow precise timing control and minimal shoot-through risk at high dv/dt.

Use Scenario: Output H-bridge in 5–10 kVA online UPS converting 400 V DC bus to 230 V AC with active harmonic filtering.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter leg, handling 60 A RMS output current.

Use Value: 650 V V_DS rating and 150°C T_j capability enable direct substitution without derating in thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P7	R_DS(on) = 99 mΩ (12% higher), same 650 V rating, identical PG-TO247-4-3 package and Kelvin source	Slightly lower power density; suitable where thermal margin exists but cost sensitivity is higher	Select when BOM cost reduction is prioritized over peak efficiency, especially in medium-power (<2 kW) PFC designs
STW62N60M2	600 V rating (no 50 V surge margin), 90 mΩ R_DS(on), 3-pin TO-247 package (no Kelvin source), higher Q_g (65 nC)	Lacks driver-source separation; requires external gate ferrite beads for reliable high-dv/dt operation	Choose only for legacy designs already using 3-pin layouts or where gate drive loop inductance is tightly controlled via layout

Compared with IPW60R099P7 and STW62N60M2, IPZA60R080P7XKSA1 offers the lowest conduction loss and highest dv/dt immunity due to its Kelvin-source architecture and tighter R_DS(on) spec - making it optimal for next-gen high-density, high-reliability server and telecom power stages.

Availability

IPZA60R080P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified industrial reliability.

Supply support for IPZA60R080P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ P7 product line was engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power supplies - emphasizing ruggedness, low-loss switching, and ease of system integration.

FAQ

What is the purpose of the Driver Source (Pin 3) in the PG-TO247-4-3 package?

Pin 3 provides a dedicated low-inductance return path for the gate driver circuit, physically separating it from the high-current Power Source (Pin 2). This Kelvin-source configuration eliminates source inductance-induced voltage spikes during switching transitions, preventing false turn-on and improving gate control fidelity - especially critical in fast-switching PFC and LLC applications.

Can IPZA60R080P7XKSA1 replace older CoolMOS™ P6 devices in existing designs?

Yes - it is a direct drop-in replacement for IPW60R099P6 and IPW60R075P6 in PG-TO247-4-3 packages, offering lower R_DS(on), reduced E_oss, and improved diF/dt ruggedness. No layout changes are required, though gate resistor tuning may further optimize switching behavior due to its lower Q_g and steeper transconductance curve.

Why does the datasheet specify V_DS = 650 V while the device is labeled "600 V"?

The 600 V designation reflects the guaranteed minimum breakdown voltage (V_(BR)DSS) under all conditions per JEDEC standards. The 650 V maximum rating accounts for statistical process margin and transient overvoltage capability - providing essential design headroom for 400 V AC mains surges, ringing, and bus overshoot in real-world 85–265 VAC offline applications.

Is parallel operation supported, and what layout guidance applies?

Parallel operation is supported but requires symmetrical gate drive paths and individual gate resistors. Infineon recommends adding ferrite beads (10–100 Ω impedance at 10–100 MHz) in series with each gate to suppress high-frequency oscillation. Source and drain interconnects must be strictly matched in length and impedance to ensure current sharing within ±10% across devices.

IPZA60R080P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 11.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 590µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2180 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 129W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IPZA60R080P7XKSA1 FAQ

1.How can I place an order for IPZA60R080P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPZA60R080P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPZA60R080P7XKSA1 reliable?

The price and inventory of IPZA60R080P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZA60R080P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPZA60R080P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPZA60R080P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPZA60R080P7XKSA1?

IPZA60R080P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPZA60R080P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPZA60R080P7XKSA1?

For technical support, including IPZA60R080P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZA60R080P7XKSA1 requirements.

6.How does Aetrix verify that IPZA60R080P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPZA60R080P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZA60R080P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPZA60R080P7XKSA1?

All IPZA60R080P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZA60R080P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPZA60R080P7XKSA1 part is unused and in its original packaging.

Return procedure for IPZA60R080P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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