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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPZA65R018CFD7XKSA1

Name: IPZA65R018CFD7XKSA1
Brand: Infineon Technologies
SKU: IPZA65R018CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPZA65R018CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IPZA65R018CFD7XKSA1.pdf

Description:: HIGH POWER_NEW

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Product details

Overview

IPZA65R018CFD7XKSA1 from Infineon is a 650 V, 18 mΩ ultra-fast body diode Superjunction MOSFET in PG-TO247-4-3 package, featuring 234 nC total gate charge and 1300 A/µs diF/dt capability. It serves as a primary switching device in high-efficiency resonant topologies-specifically phase-shift full-bridge (ZVS) and LLC converters-for server power supplies, telecom rectifiers, EV charging stations, and solar inverters.

For engineers reviewing the IPZA65R018CFD7XKSA1 datasheet, IPZA65R018CFD7XKSA1 pinout, IPZA65R018CFD7XKSA1 application, or IPZA65R018CFD7XKSA1 equivalent, key selection criteria include its 700 V maximum drain-source voltage rating, low R_DS(on) temperature coefficient, fast diode commutation robustness, and dedicated source-sense configuration enabling precise gate drive control in paralleled high-power designs.

Technical Context

This CoolMOS™ CFD7 device integrates a Kelvin source (Driver Source Pin 3) and main source (Power Source Pin 2), decoupling gate drive loop from high-current paths to minimize switching loss and oscillation. Its optimized charge distribution yields 396 pF energy-related output capacitance (Co_er) at 400 V and 50 ns turn-on delay under standard test conditions (V_DD = 400 V, I_D = 58.2 A, R_G = 1.8 Ω).

The internal fast body diode supports hard commutation up to 1300 A/µs with 236–354 ns reverse recovery time and only 2.3–4.6 µC Q_rr, enabling reliable zero-voltage switching across wide load ranges. Thermal resistance of 0.28 °C/W (junction-to-case) ensures stable operation at 150 °C junction temperature under continuous 106 A conduction at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - Withstands transient overvoltage spikes beyond nominal 650 V rating without avalanche stress in industrial bus applications.
R_DS(on) max	18 mΩ @ T_j = 25 °C - Enables low conduction loss in high-current primary-side switches for >3 kW SMPS designs.
Q_g typ	234 nC - Defines gate driver power requirement and influences switching speed trade-off in ZVS topologies.
E_oss @ 400 V	31.6 µJ - Quantifies stored energy in output capacitance; directly impacts dead-time loss and resonant tank design in LLC converters.
diF/dt max	1300 A/µs - Validates hard-switching robustness during diode commutation, critical for reliability in asymmetric half-bridge configurations.
T_j max	150 °C - Supports continuous operation in thermally constrained environments such as enclosed server PSUs and outdoor EV chargers.
R_thJC	0.28 °C/W - Allows accurate thermal modeling for heatsink sizing when dissipating up to 446 W at case temperature of 25 °C.

Pinout & Package

Package: PG-TO247-4-3 - 4-pin through-hole variant with isolated tab (Drain), enabling enhanced thermal performance and reduced parasitic inductance versus standard TO-247.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	High-current main drain connection; electrically tied to metal tab for direct heatsink mounting and lowest thermal resistance path.
Pin 2	Power Source	Main source terminal carrying full load current; connects to power ground or low-side return path in bridge configurations.
Pin 3	Driver Source (Kelvin Source)	Sense-only source node for gate driver feedback; eliminates voltage drop error in gate loop, stabilizing V_GS during fast switching.
Pin 4	Gate	Control input for MOSFET channel; requires external gate resistor placement on Driver Source (Pin 3), not Gate (Pin 4), per Infineon recommendation.

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs diF/dt and 236 ns t_rr enable reliable hard commutation without snubbers in phase-shifted full-bridge designs.
Source-sense architecture	Dedicated Driver Source (Pin 3) separates gate drive return from power current path, reducing gate oscillation and improving EMI behavior.
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25 °C to 150 °C - maintains predictable conduction loss across operating temperature range.
700 V V_DS rating	Provides 50 V safety margin above 650 V nominal rating, accommodating line surges in 400 V DC bus telecom and solar applications.
JEDEC industrial qualification	Fully qualified per JEDEC standards for industrial use - validated for 150 °C continuous operation and long-term reliability in harsh environments.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3–6 kW LLC resonant converter powering 48 V intermediate bus in hyperscale data centers.

IC Role / Device Role / Timing Role: High-frequency (100–300 kHz) ZVS switching element with ultra-low Q_g-to-R_DS(on) ratio enabling >96% efficiency at light load.

Use Value: 31.6 µJ E_oss minimizes dead-time conduction loss; 1300 A/µs diF/dt ensures robustness during asymmetric load transients.

Use Scenario: Active clamp forward or phase-shift full-bridge stage in -48 V telecom rectifier with 380–400 V DC input.

IC Role / Device Role / Timing Role: Main switching transistor handling 100 A peak currents with fast body diode recovery for ZVS transition at 100–200 kHz.

Use Value: 234 nC Q_g enables efficient gate driving with low-power drivers; 0.28 °C/W R_thJC sustains 106 A continuous conduction at 80 °C case temperature.

EV Charging Station

Solar Inverter

Use Scenario: Primary switch in dual-active-bridge (DAB) isolated DC-DC converter for 11–22 kW AC/DC on-board chargers.

IC Role / Device Role / Timing Role: Bidirectional ZVS-capable switch supporting soft-commutation in both directions with low reverse recovery charge (Q_rr = 2.3–4.6 µC).

Use Value: 18 mΩ R_DS(on) reduces conduction loss during high-duty-cycle operation; 700 V V_DS withstands 600 V+ bus transients during regenerative braking events.

Use Scenario: High-side switch in three-level NPC or T-type inverter stage converting 800–1000 V DC PV string voltage to grid-synchronized AC.

IC Role / Device Role / Timing Role: Fast-switching 650 V device operating at 16–20 kHz with minimized switching loss via low Co_er (396 pF) and controlled dv/dt (120 V/ns).

Use Value: 50 ns t_d(on) and 4 ns t_f support precise PWM timing; Kelvin source improves gate control stability under high di/dt conditions in multi-level topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R019C7	Same CFD7 generation, 19 mΩ R_DS(on), 242 nC Q_g, PG-TO247-3 package (no Kelvin source)	Lacks Driver Source pin; unsuitable for precision gate drive in paralleled or high-di/dt designs	Select when cost sensitivity outweighs need for Kelvin source; verify gate loop layout for oscillation risk.
IPP65R022C7	CFD7 family, 22 mΩ R_DS(on), 192 nC Q_g, PG-TO247-4-3 package with Kelvin source	Higher R_DS(on) but lower Q_g; better suited for higher-frequency (>300 kHz) operation with reduced driver loss	Prefer for compact, high-frequency LLC designs where conduction loss is secondary to switching loss and gate drive power.

Compared with IPZA65R018CFD7XKSA1, IPW65R019C7 trades Kelvin-source precision for lower cost and simpler layout, while IPP65R022C7 offers lower gate charge at the expense of higher conduction loss-making it optimal for frequency-constrained, space-limited applications where thermal headroom exists.

Availability

IPZA65R018CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPZA65R018CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap technologies for industrial, automotive, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7 Superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters in industrial SMPS, where ultra-fast body diodes and Kelvin-source accuracy are essential for ZVS reliability.

FAQ

What is the purpose of the separate Driver Source (Pin 3) and Power Source (Pin 2) terminals?

Pin 3 (Driver Source) provides a Kelvin connection for gate driver return, eliminating voltage drop from high-current source paths that would otherwise distort V_GS. Pin 2 (Power Source) carries full load current to system ground. Their non-interchangeability prevents miswiring-induced malfunction-Infineon explicitly warns against swapping them due to potential gate control failure and device destruction.

Can IPZA65R018CFD7XKSA1 be used in hard-switched topologies like conventional flyback or PFC?

While rated for 650 V and capable of hard switching, this device is optimized for resonant topologies (LLC, PSFB) where its ultra-fast body diode and low E_oss deliver maximum benefit. In hard-switched PFC, its 234 nC Q_g increases driver loss versus lower-Q_g alternatives, and its 1300 A/µs diF/dt offers no advantage-making it less optimal than dedicated PFC MOSFETs like the IPA65R190C7.

What is the maximum recommended gate resistor value for parallel operation?

For paralleling multiple IPZA65R018CFD7XKSA1 devices, Infineon recommends placing individual gate resistors on the Driver Source (Pin 3), not the Gate (Pin 4). While no single maximum value is specified, typical designs use 5–10 Ω per device to balance switching speed, shoot-through immunity, and gate oscillation damping-validated by measured 50 ns t_d(on) and 4 ns t_f at R_G = 1.8 Ω in the datasheet.

How does the 700 V V_DS rating impact system-level surge protection requirements?

The 700 V absolute maximum V_DS rating provides a 50 V margin above the 650 V nominal breakdown voltage, allowing the device to survive transient overvoltages-such as 400 V DC bus surges reaching 680–690 V-without entering avalanche mode. This reduces dependency on external clamping components in telecom and solar systems compliant with IEC 61000-4-5 Level 4 surge immunity.

IPZA65R018CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 58.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 2.91mA

Gate Charge (Qg) (Max) @ Vgs:: 234 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11660 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IPZA65R018CFD7XKSA1 FAQ

1.How can I place an order for IPZA65R018CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPZA65R018CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPZA65R018CFD7XKSA1 reliable?

The price and inventory of IPZA65R018CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZA65R018CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPZA65R018CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPZA65R018CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPZA65R018CFD7XKSA1?

IPZA65R018CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPZA65R018CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPZA65R018CFD7XKSA1?

For technical support, including IPZA65R018CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZA65R018CFD7XKSA1 requirements.

6.How does Aetrix verify that IPZA65R018CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPZA65R018CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZA65R018CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPZA65R018CFD7XKSA1?

All IPZA65R018CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZA65R018CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPZA65R018CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPZA65R018CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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