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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD009N06NM5ATMA1

Name: IQD009N06NM5ATMA1
Brand: Infineon Technologies
SKU: IQD009N06NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD009N06NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IQD009N06NM5ATMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQD009N06NM5ATMA1 from Infineon Technologies is an N-channel 60 V OptiMOSTM 5 power MOSFET in PG-TSON-8 package, featuring 0.9 mΩ max R_DS(on), 445 A continuous drain current at T_C=25 °C, and 100% avalanche tested performance. It serves as a high-current synchronous rectifier or primary-side switch in high-efficiency DC-DC converters for server power supplies.

For engineers reviewing the IQD009N06NM5ATMA1 datasheet, IQD009N06NM5ATMA1 pinout, IQD009N06NM5ATMA1 application, or IQD009N06NM5ATMA1 equivalent, key selection criteria include low R_DS(on) at 6 V gate drive, Q_g = 120 nC for fast switching, thermal resistance R_thJC = 0.45 °C/W, and integrated body diode with t_rr = 45 ns (25 A, 100 A/µs).

Technical Context

This MOSFET uses trench-gate silicon technology optimized for high-current, low-voltage synchronous buck stages. Its 0.9 mΩ R_DS(on) enables sub-1 mΩ conduction loss at 50 A, while Q_gd = 20–30 nC and Q_oss = 127 nC support efficient hard-switching operation up to 1 MHz in multiphase VRMs.

The device integrates a robust body diode with V_SD = 0.81 V (T_j = 25 °C, I_F = 50 A) and Q_rr = 51–532 nC depending on di/dt, enabling reliable reverse recovery in high-frequency synchronous rectification without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input bus systems with 20 % margin
R_DS(on), max	0.9 mΩ - Enables <1.2 W conduction loss at 400 A in parallel-configured VRMs
I_D, cont.	445 A @ T_C = 25 °C - Supports single-device implementation in 800 W+ CPU/GPU VRMs
Q_g	120 nC - Compatible with standard gate drivers (e.g., IR35201, UCC27531) at ≤1 MHz
R_thJC	0.45 °C/W - Allows >300 W dissipation with 135 °C case temperature under forced air cooling
t_rr	45 ns @ 25 A, 100 A/µs - Limits reverse recovery energy to <1 µJ per cycle in 500 kHz sync-FET operation
E_AS	1115 mJ - Withstands single-pulse inductive energy in 48 V battery disconnect applications

Pinout & Package

PG-TSON-8 package: 5 mm × 6 mm footprint, exposed drain pad on bottom side for thermal enhancement, 0.65 mm pitch, RoHS-compliant lead plating.

Pin/Terminal	Circuit Role	Design Meaning
1–3, Source	Source connection / internal body diode cathode	Low-inductance parallel routing required; connects directly to PCB ground plane
4, Gate	Control terminal	Requires Kelvin-connected gate resistor to minimize oscillation; sensitive to layout parasitics
5–8, Drain	Power output / internal body diode anode	Exposed pad (pins 5–8) must be soldered to large copper area for thermal path to heatsink

Key Features

Feature	Design Value
OptiMOSTM 5 trench architecture	Reduces R_DS(on) × Q_g figure-of-merit by 35 % vs. prior generation for improved efficiency at 500 kHz–1 MHz
100 % avalanche rated	Guarantees ruggedness against inductive switching transients in unregulated 48 V bus environments
Low Q_oss (127 nC)	Minimizes turn-off loss in high-frequency hard-switched topologies such as two-phase interleaved buck
Halogen-free construction	Complies with IEC61249-2-21 for environmentally constrained industrial and telecom equipment

Applications

Server VRM Phase Block

48 V Telecom Rectifier

Use Scenario: Single-phase 48 V → 0.8 V/400 A CPU core supply in dual-socket servers.

IC Role / Device Role / Timing Role: Synchronous FET in high-side position of interleaved buck converter operating at 800 kHz.

Use Value: 0.9 mΩ R_DS(on) reduces conduction loss by 42 % vs. 1.5 mΩ alternatives, enabling 95.2 % peak efficiency at 400 A.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V output telecom PSU with 3 kW rating.

IC Role / Device Role / Timing Role: Low-side sync-FET replacing Schottky diodes in LLC resonant converter output stage.

Use Value: Integrated body diode with t_rr = 45 ns eliminates need for external SiC Schottky, reducing BOM count and layout area by 30 %.

Industrial Motor Drive Inverter

Battery Energy Storage System (BESS) Switch

Use Scenario: 60 V DC link inverter for 5 kW servo drives with regenerative braking.

IC Role / Device Role / Timing Role: High-current phase-leg switch handling 300 A peak motor currents with PWM at 20 kHz.

Use Value: E_AS = 1115 mJ ensures safe operation during short-circuit events without external snubbers.

Use Scenario: Bidirectional 60 V battery disconnect switch in 48 V BESS modules with active cell balancing.

IC Role / Device Role / Timing Role: Solid-state main contactor replacing electromechanical relays for >100 k-cycle lifetime.

Use Value: 445 A continuous rating supports 200 A system-level current with 2.2× derating margin, eliminating thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB012N06N5	R_DS(on) = 1.2 mΩ (max), Q_g = 105 nC, same PG-TSON-8 package	Higher conduction loss but lower gate charge improves light-load efficiency	Select when optimizing for partial-load efficiency over full-load thermal performance
STL220N6F7	R_DS(on) = 0.85 mΩ (typ), Q_g = 135 nC, PowerFLAT 5×6 package	Lower R_DS(on) but higher Q_g increases switching loss above 300 kHz	Select when board space allows larger footprint and target frequency is ≤300 kHz

Compared with IPB012N06N5 and STL220N6F7, IQD009N06NM5ATMA1 delivers the lowest R_DS(on) × Q_g product (108 mΩ·nC), making it optimal for high-frequency, high-current VRMs where both conduction and switching losses must be minimized simultaneously.

Availability

IQD009N06NM5ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial motor drives, and battery energy storage systems requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IQD009N06NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and qualification standards.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IQD009N06NM5ATMA1 has a maximum junction temperature (T_j) of 175 °C, validated per JEDEC JESD22-A108 for industrial applications. Derating is required above T_C = 100 °C per Figure 2 in the datasheet, with continuous I_D dropping to 265 A at T_C = 100 °C under V_GS = 6 V drive.

Is this MOSFET suitable for synchronous rectification in LLC resonant converters?

Yes-the integrated body diode has t_rr = 45 ns (25 A, 100 A/µs) and Q_rr = 51 nC, enabling clean zero-voltage switching (ZVS) transitions in 100–500 kHz LLC designs. Its low Q_oss (127 nC) further minimizes turn-off loss during hard commutation events.

Does the PG-TSON-8 package require special PCB layout considerations?

Yes-the exposed drain pad (pins 5–8) must be connected to ≥6 cm² of 70 µm copper on inner layer(s) for thermal performance matching R_thJA = 50 °C/W. Signal traces for gate (pin 4) and source (pins 1–3) must use Kelvin routing to avoid common-source inductance-induced oscillation.

How does the 100 % avalanche rating impact system-level reliability?

The 1115 mJ single-pulse avalanche energy rating ensures survivability during worst-case inductive turn-off events-such as sudden load dump in 48 V BESS disconnect circuits or short-circuit faults in motor drives-without requiring external clamping components or derating the MOSFET's voltage rating.

IQD009N06NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Ta), 445A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 0.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 163µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-9

IQD009N06NM5ATMA1 FAQ

1.How can I place an order for IQD009N06NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD009N06NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD009N06NM5ATMA1 reliable?

The price and inventory of IQD009N06NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD009N06NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IQD009N06NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD009N06NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD009N06NM5ATMA1?

IQD009N06NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD009N06NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD009N06NM5ATMA1?

For technical support, including IQD009N06NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD009N06NM5ATMA1 requirements.

6.How does Aetrix verify that IQD009N06NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD009N06NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD009N06NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IQD009N06NM5ATMA1?

All IQD009N06NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD009N06NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD009N06NM5ATMA1 part is unused and in its original packaging.

Return procedure for IQD009N06NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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