Infineon Technologies IQD009N06NM5CGATMA1

Overview

IQD009N06NM5CGATMA1 from Infineon Technologies is an N-channel 60 V OptiMOSTM 5 power MOSFET in PG-TTFN-9 package, rated for 445 A continuous drain current at TC=25 °C, with max RDS(on) of 0.9 mΩ at VGS=10 V and 50 A, 100% avalanche tested, and RoHS/halogen-free compliant. It serves as a high-current synchronous rectifier or primary-side switch in high-efficiency DC-DC converters for server power supplies.

For engineers reviewing the IQD009N06NM5CGATMA1 datasheet, IQD009N06NM5CGATMA1 pinout, IQD009N06NM5CGATMA1 application, or IQD009N06NM5CGATMA1 equivalent, key selection criteria include its ultra-low RDS(on), low Qg (120 nC) and Qoss (127 nC), thermal resistance (RthJC = 0.45 °C/W), and validated industrial-grade reliability per JEDEC.

Technical Context

This device employs a trench-gate, superjunction-enhanced silicon structure optimized for high-current, low-voltage switching in hard-switched and synchronous rectification topologies. Its gate threshold voltage (VGS(th) = 2.1–3.3 V) ensures robust turn-on with standard 5–10 V gate drivers, while low Crss (110–190 pF) minimizes Miller-induced shoot-through risk.

The integrated body diode exhibits fast reverse recovery (trr = 45–90 ns, Qrr = 51–102 nC) and low forward voltage (VSD = 0.81–1.0 V at IF = 50 A), enabling efficient bidirectional conduction in LLC and buck-boost phases without external Schottky assistance.

Key Specifications

Pinout & Package

Package: PG-TTFN-9 - Thermally enhanced 9-pin exposed-drain TDFN with 0.45 mm pitch, optimized for PCB copper area thermal coupling and low-inductance source/drain routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IXFN420N075T2 and IPB012N06N5ATMA1, IQD009N06NM5CGATMA1 delivers the lowest RDS(on) in its voltage class with best-in-class thermal resistance-critical for compact, air-cooled 48 V power stages-but requires careful gate drive design due to higher Qg.

Availability

IQD009N06NM5CGATMA1 is available at Aetrix Electronics and suitable for server VRMs, 48 V telecom DC-DC converters, and industrial battery disconnect systems requiring stable component supply across multi-year production cycles.

Supply support for IQD009N06NM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

IQD009N06NM5CGATMA1 belongs to the OptiMOSTM 5 power transistor product line, engineered specifically for high-efficiency, high-current DC-DC conversion in data center, telecom, and industrial power supplies where low RDS(on) and thermal performance are critical.

FAQ

What is the maximum recommended gate drive voltage for IQD009N06NM5CGATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Using 12–15 V increases RDS(on) margin and improves conduction loss, yet risks accelerated gate oxide stress over time. For most applications, 10 V is the recommended nominal gate drive level per datasheet test conditions and JEDEC qualification limits.

Does IQD009N06NM5CGATMA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to dampen ringing and control dI/dt. Based on dynamic characterization (RG,ext = 1.6 Ω used in datasheet timing tests), a 2.2–4.7 Ω resistor is recommended for 300–1000 kHz operation. Lower values increase switching speed but raise EMI risk; higher values reduce losses but extend switching times and increase total switching energy.

Can IQD009N06NM5CGATMA1 be paralleled with identical units without current-sharing resistors?

Yes-its positive temperature coefficient of RDS(on) (confirmed in Diagram 9) ensures inherent current sharing above 75 °C junction temperature. However, matched PCB layout (symmetrical trace length, copper area, and thermal vias) is mandatory. At room temperature, initial imbalance may reach ±15 %, so derating total current by 10 % is advised for multi-device configurations.

Is the body diode suitable for continuous reverse conduction in synchronous rectification?

Yes-the integrated diode is rated for 252 A continuous forward current (IS) at TC = 25 °C and features low VSD (0.81 V) and fast trr (45 ns). In synchronous rectifier applications, it operates efficiently during dead-time conduction, especially when paired with precise adaptive gate timing to minimize overlap and reverse recovery loss.