Infineon Technologies IQD009N06NM5SCATMA1

Overview

IQD009N06NM5SCATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 5 family, rated for 60 V drain-source voltage, 0.9 mΩ maximum R_DS(on) at V_GS = 10 V, and 445 A continuous drain current at T_C = 25 °C. It features double-side cooling capability, 100% avalanche-tested ruggedness, and is optimized for high-efficiency synchronous rectification in server VRMs and DC-DC converters.

For engineers reviewing the IQD009N06NM5SCATMA1 datasheet, IQD009N06NM5SCATMA1 pinout, IQD009N06NM5SCATMA1 application, or IQD009N06NM5SCATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), low Q_g (120 nC) and Q_oss (127 nC), top/bottom thermal resistance (0.56/0.45 °C/W), PG-WHSON-8 package with exposed drain tab, and industrial-grade JEDEC qualification.

Technical Context

This device implements a trench-based silicon power MOSFET architecture with optimized cell pitch and gate oxide design to minimize conduction and switching losses simultaneously. Its 60 V rating targets 48 V input bus systems, while the 0.9 mΩ R_DS(on) enables <1.5 W conduction loss at 40 A in typical 12 V output stages.

The PG-WHSON-8 package integrates an exposed drain pad on both top and bottom surfaces, enabling dual-sided thermal interface to heatsinks or PCB copper planes. The internal body diode supports synchronous FET operation with t_rr ≤ 90 ns and Q_rr ≤ 102 nC at 25 A, reducing shoot-through risk and reverse recovery losses.

Key Specifications

Pinout & Package

Package: PG-WHSON-8 (exposed drain tab on top and bottom, 5 mm × 6 mm footprint, 0.55 mm height). Thermal pad is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IPB012N06N5ATMA1 and IRFH7107TRPBF, IQD009N06NM5SCATMA1 delivers the lowest R_DS(on) in its class with dual thermal interfaces - making it optimal for high-current, thermally constrained server and telecom power stages where both conduction loss and junction temperature must be minimized.

Availability

IQD009N06NM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IQD009N06NM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with over 30 years of leadership in silicon power devices.

The OptiMOS™ 5 product line targets high-efficiency, high-current power conversion in datacenter, telecom, and industrial applications - emphasizing ultra-low R_DS(on), fast switching, and robust thermal performance in compact packages.

FAQ

What is the maximum allowable gate-source voltage for IQD009N06NM5SCATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks irreversible gate oxide breakdown. Recommended drive is 10 V for full enhancement, with 6 V sufficient for most high-current applications given its 2.1–3.3 V threshold range. Gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching.

Can IQD009N06NM5SCATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized R_DS(on) rises with junction temperature) enables inherent current sharing. Successful parallel operation requires matched gate drive layout, symmetrical source inductance (<0.5 nH difference), and shared thermal interface. Derate total current by 15 % versus single-device rating to account for dynamic imbalance.

Is the drain tab electrically isolated from the PCB mounting surface?

No - the exposed drain tab is electrically connected to Drain (Pins 5–8) and must be insulated from any grounded or low-voltage plane using dielectric thermal pads or ceramic substrates. Direct soldering to a copper pour without isolation creates a short circuit. Thermal interface material must have ≥2 kV dielectric strength for 48 V systems.

Does IQD009N06NM5SCATMA1 require gate resistors for EMI control?

Yes - a 2.2–4.7 Ω gate resistor is recommended to dampen ringing caused by parasitic L_gs/C_iss resonance and limit di/dt-induced voltage spikes. Values below 2 Ω increase EMI and risk gate oscillation; above 10 Ω degrades switching speed and increases switching loss. Layout must minimize gate loop area to preserve resistor effectiveness.