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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD016N08NM5ATMA1

Name: IQD016N08NM5ATMA1
Brand: Infineon Technologies
SKU: IQD016N08NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD016N08NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IQD016N08NM5ATMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQD016N08NM5ATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TSON-8 package, rated for 80 V V_DS, 1.57 mΩ R_DS(on) max at V_GS = 10 V, and 323 A continuous drain current at T_C = 25 °C. It integrates an internal body diode and is fully qualified per JEDEC for industrial applications including high-efficiency DC-DC converters and motor drives.

For engineers reviewing the IQD016N08NM5ATMA1 datasheet, IQD016N08NM5ATMA1 pinout, IQD016N08NM5ATMA1 application, or IQD016N08NM5ATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), 100% avalanche-tested ruggedness, 123 nC Q_oss, and thermal resistance of 0.45 °C/W (junction-to-case), critical for high-power density synchronous rectification and battery protection circuits.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance: t_d(on) = 15 ns, t_r = 7 ns, t_d(off) = 29 ns, and t_f = 10 ns under standard 40 V/50 A test conditions with 1.6 Ω external gate resistor.

Its gate charge profile shows Q_g = 106 nC total, Q_gd = 25–38 nC, and Q_g(th) = 21 nC, enabling precise control of Miller plateau timing and minimizing switching losses in hard-switched and synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus systems with 20 % safety margin
R_DS(on), max	1.57 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 250 A, critical for high-current power stages
I_D, cont	323 A at T_C = 25 °C - Supports high-current output stages without parallel devices in compact PCB layouts
Q_oss	123 nC - Low output charge reduces turn-off energy and improves light-load efficiency in resonant converters
R_thJC	0.45 °C/W - Enables direct thermal coupling to heatsink for >300 W continuous power dissipation
E_AS	802 mJ - Confirmed single-pulse avalanche capability supports inductive load switching without snubbers
V_GS(th)	2.2–3.8 V - Compatible with standard 3.3 V and 5 V gate drivers; ensures reliable turn-on at low drive voltages

Pinout & Package

Package: PG-TSON-8 (exposed drain pad), 5 mm × 6 mm footprint, 0.8 mm height, RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1–3, Source	Source connection (low-side reference)	Three parallel pins reduce source inductance and improve current sharing in high-di/dt operation
4, Gate	Control terminal	Single gate input optimized for low-inductance layout; requires <1.6 Ω external series resistance for stable switching
5–8, Drain	Power output / high-side switch node	Four-pin drain configuration maximizes copper area for heat transfer and minimizes parasitic inductance in power loop

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.57 mΩ enables <1 W conduction loss at 250 A, reducing thermal design burden in high-current SMPS
100% avalanche tested	Guarantees 802 mJ single-pulse energy handling without derating, eliminating need for external clamping in motor drive H-bridges
Optimized gate charge profile	Q_gd/Q_g ratio ~24 % ensures clean Miller plateau transition and robust noise immunity in noisy industrial environments
Thermal resistance R_thJC	0.45 °C/W allows direct mounting to heatsink for sustained >300 W power dissipation without forced air

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-density 48 V input, 0.8 V/300 A output VRM for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 500 kHz–1 MHz with tight dead-time control.

Use Value: 1.57 mΩ R_DS(on) and 0.45 °C/W R_thJC enable >95 % efficiency at full load and eliminate need for phase interleaving or paralleling.

Use Scenario: 3-phase inverter stage for 7.5 kW servo drive with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter, handling 250 A peak current with 100 % avalanche rating.

Use Value: 802 mJ E_AS and 123 nC Q_oss allow safe operation during short-circuit events and reduce snubber losses by 35 % vs. legacy MOSFETs.

Onboard Charger (OBC)

Battery Protection Module

Use Scenario: Bidirectional CLLC resonant converter in 11 kW EV OBC.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side, commutated at zero voltage with 40 V reverse bias.

Use Value: Low Q_oss (123 nC) and fast trr (48 ns) minimize reverse recovery loss and improve ZVS range across 10–100 % load.

Use Scenario: High-current battery disconnect FET in 48 V lithium-ion ESS with 300 A continuous rating.

IC Role / Device Role / Timing Role: Main isolation switch with integrated body diode for precharge and fault current limiting.

Use Value: 323 A I_D and 256 A I_S support single-device solution for Class 4 battery protection, reducing BOM count and PCB area by 40 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 1.7 mΩ (higher), Q_g = 115 nC (higher), same PG-TSON-8 package	Lower switching efficiency in high-frequency (>300 kHz) applications due to higher Q_gd and C_iss	Preferred where cost sensitivity outweighs 3–5 % efficiency gain and thermal margin is ample
IXTH320N075L2	TO-247-3L package, R_DS(on) = 0.75 mΩ (lower), but Q_g = 220 nC (much higher), no integrated body diode	Requires external Schottky diode and larger heatsink; unsuitable for space-constrained designs	Selected only when maximum current density is secondary to absolute lowest R_DS(on) and board-level thermal management is unconstrained

Compared with STL220N8F7AG and IXTH320N075L2, IQD016N08NM5ATMA1 delivers optimal balance of ultra-low R_DS(on), moderate gate charge, and compact surface-mount packaging-enabling higher power density in server VRMs and OBCs where PCB area and thermal interface constraints dominate.

Availability

IQD016N08NM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, onboard chargers, and battery protection modules requiring stable component supply and long-term industrial qualification.

Supply support for IQD016N08NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current power conversion in datacenter, industrial, and e-mobility applications where low R_DS(on), ruggedness, and thermal performance are primary design drivers.

FAQ

What is the maximum junction temperature rating for IQD016N08NM5ATMA1?

The device is rated for continuous operation up to T_j = 175 °C, with storage temperature ranging from –55 °C to +175 °C. Its thermal characteristics-including R_thJC = 0.45 °C/W and R_thJA = 50 °C/W on a 6 cm² FR4 PCB-are validated per JEDEC JESD51 standards for industrial use cases.

Does IQD016N08NM5ATMA1 have an integrated body diode, and what are its key parameters?

Yes, it features an integrated unidirectional body diode with I_S = 256 A continuous forward current at T_C = 25 °C, V_SD = 0.82–1.0 V at I_F = 50 A, and t_rr = 48–96 ns depending on di/dt. This diode is fully characterized and qualified for synchronous rectification and freewheeling roles.

Can IQD016N08NM5ATMA1 be used in synchronous rectification for LLC resonant converters?

Yes-its low Q_oss (123 nC), fast t_r/t_f (7 ns/10 ns), and low V_SD make it suitable for secondary-side synchronous rectification in 48 V–60 V input LLC converters operating up to 1 MHz, especially where ZVS is maintained and reverse recovery loss must be minimized.

What is the gate threshold voltage range, and how does it affect drive compatibility?

V_GS(th) is specified from 2.2 V to 3.8 V at T_j = 25 °C, ensuring reliable turn-on with 3.3 V logic-level drivers and robust noise margin with 5 V gate drivers. The narrow spread and low temperature coefficient (<0.5 mV/°C) prevent unintended turn-on in high-noise industrial environments.

IQD016N08NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 323A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.57mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 159µA

Gate Charge (Qg) (Max) @ Vgs:: 133 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-9

IQD016N08NM5ATMA1 FAQ

1.How can I place an order for IQD016N08NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD016N08NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD016N08NM5ATMA1 reliable?

The price and inventory of IQD016N08NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD016N08NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IQD016N08NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD016N08NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD016N08NM5ATMA1?

IQD016N08NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD016N08NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD016N08NM5ATMA1?

For technical support, including IQD016N08NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD016N08NM5ATMA1 requirements.

6.How does Aetrix verify that IQD016N08NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD016N08NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD016N08NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IQD016N08NM5ATMA1?

All IQD016N08NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD016N08NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD016N08NM5ATMA1 part is unused and in its original packaging.

Return procedure for IQD016N08NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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