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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD016N08NM5CGATMA1

Name: IQD016N08NM5CGATMA1
Brand: Infineon Technologies
SKU: IQD016N08NM5CGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD016N08NM5CGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerTDFN

Datasheet:: IQD016N08NM5CGATMA1.pdf

Description:: OPTIMOS 6 POWER-TRANSISTOR

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Product details

Overview

IQD016N08NM5CGATMA1 from Infineon Technologies is an N-channel, normal-level 80 V OptiMOSTM 5 power MOSFET in PG-TTFN-9 package, featuring 1.57 mΩ max R_DS(on), 323 A continuous drain current at T_C = 25 °C, and 100% avalanche tested for robustness in high-current switching applications such as DC-DC synchronous buck converters.

For engineers reviewing the IQD016N08NM5CGATMA1 datasheet, IQD016N08NM5CGATMA1 pinout, IQD016N08NM5CGATMA1 application, or IQD016N08NM5CGATMA1 equivalent, key selection criteria include low R_DS(on) at 10 V gate drive, Q_g = 106 nC for fast switching, thermal resistance R_thJC = 0.45 °C/W, and validated industrial-grade reliability per JEDEC.

Technical Context

This device employs Infineon's OptiMOSTM 5 silicon process optimized for high-current, low-voltage power stages. Its 80 V V_DS rating supports 48 V input systems, while the 1.57 mΩ R_DS(on) enables high-efficiency operation at >200 A load currents with minimal conduction loss.

The PG-TTFN-9 package integrates a thermally enhanced exposed drain pad (Pins 5–8) and separate source (Pins 1–4) and gate (Pin 9) terminals to minimize parasitic inductance and improve thermal transfer. Gate charge parameters-Q_gd = 25–38 nC, Q_oss = 123 nC-support high-frequency synchronous rectification with controlled dv/dt and reduced switching loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V nominal bus systems with 25 % overvoltage margin for transient suppression.
R_DS(on), max	1.57 mΩ @ V_GS = 10 V, I_D = 50 A - Enables <1 W conduction loss at 250 A, critical for high-current POL converters.
I_D, cont.	323 A @ T_C = 25 °C - Rated for continuous operation in high-power server VRMs and EV onboard chargers.
Q_g	106 nC - Determines gate driver power requirement; compatible with standard 2 A peak drivers at ≤1 MHz switching.
R_thJC	0.45 °C/W - Allows junction-to-case temperature rise of ≤142 °C at 315 W dissipation, enabling compact heatsink design.
E_AS	802 mJ - Withstands single-pulse inductive energy without failure, essential for motor drive freewheeling protection.
Q_oss	123 nC - Defines output capacitance energy loss during hard-switching transitions; impacts ZVS feasibility above 300 kHz.

Pinout & Package

PG-TTFN-9 is a thermally optimized 9-pin surface-mount package with integrated copper clip for ultra-low inductance and high-current capability. The exposed drain pad (Pins 5–8) provides primary thermal path; source (Pins 1–4) and gate (Pin 9) are isolated for clean gate control.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–4	Source	Low-inductance parallel connection for return path; minimizes source loop inductance in high-di/dt synchronous FETs.
Pins 5–8	Drain	Exposed copper pad forming primary thermal interface and main current path; requires full-solder thermal pad on PCB.
Pin 9	Gate	Dedicated gate terminal isolated from source pins to prevent Miller-induced turn-on; enables stable high-speed switching.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against inductive kickback up to 802 mJ, eliminating need for external snubbers in motor control.
Superior thermal resistance	R_thJC = 0.45 °C/W enables >300 W power handling with simple heatsinking-critical for space-constrained 48 V–12 V DC-DC modules.
Very low R_DS(on)	1.57 mΩ at 10 V drive reduces conduction loss by >35 % vs. prior-gen 2.5 mΩ devices, directly improving efficiency in 50–100 A loads.
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21, supporting automotive and industrial end-equipment compliance without derating.

Applications

Server Voltage Regulator Modules

Industrial Motor Drives

Use Scenario: High-density 48 V–0.8 V VRM supplying CPU/GPU cores with >500 A peak current.

IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase buck converter, switching at 500–1000 kHz with precise dead-time control.

Use Value: 1.57 mΩ R_DS(on) and 0.45 °C/W R_thJC enable >95 % efficiency at 300 A while maintaining T_j < 125 °C under airflow.

Use Scenario: 48 V BLDC inverter stage for conveyor drives and pumps requiring regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, conducting freewheeling current during PWM off-time.

Use Value: 100 % avalanche rating (802 mJ) ensures safe operation during inductive flyback without external clamping diodes.

EV Onboard Chargers

Telecom Rectifier Modules

Use Scenario: Primary-side synchronous rectification in 3.3 kW AC–DC PFC + LLC stage with 400 V bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in LLC resonant converter, operating in ZVS region with low Q_oss.

Use Value: Q_oss = 123 nC and C_oss = 1200–1600 pF support efficient ZVS down to 200 kHz, reducing switching loss by 40 % vs. Schottky diodes.

Use Scenario: 48 V hot-swap OR-ing FET in redundant telecom power shelves with 100 A continuous load.

IC Role / Device Role / Timing Role: Ideal diode controller replacement, conducting bidirectional current with ultra-low forward drop.

Use Value: R_DS(on) = 1.57 mΩ yields <79 mV drop at 50 A-lower than SiC Schottkys-reducing heat generation and improving system MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N08N5ATMA1	R_DS(on) = 1.7 mΩ (max), Q_g = 110 nC, same PG-TTFN-9 package	Slightly higher conduction loss; identical thermal and avalanche specs	Select when tighter R_DS(on) binning is not required and cost optimization is prioritized.
IRFH8325TRPBF	R_DS(on) = 1.8 mΩ (max), Q_g = 102 nC, PowerPAK® 8x8 package	Higher R_thJA (55 °C/W vs. 50 °C/W); no dedicated gate pin isolation	Prefer for legacy board designs using PowerPAK footprint; avoid in >300 A thermal-limited layouts.

Compared with IPB017N08N5ATMA1 and IRFH8325TRPBF, IQD016N08NM5CGATMA1 delivers the lowest R_DS(on) and best thermal resistance in its class-enabling higher current density and lower junction temperature rise in multi-phase VRMs and high-power inverters.

Availability

IQD016N08NM5CGATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, industrial motor drives, EV onboard chargers, and telecom rectifier modules requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IQD016N08NM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and e-mobility applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The IQD016N08NM5CGATMA1 supports 229 A continuous drain current at case temperature of 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits under real-world heatsink conditions and must be verified with actual PCB layout and airflow.

Is this MOSFET suitable for synchronous rectification in LLC resonant converters?

Yes-its low Q_oss (123 nC), fast switching times (t_d(off) = 29 ns), and low R_DS(on) make it well-suited for secondary-side synchronous rectification in 200–500 kHz LLC converters, especially where ZVS operation and efficiency >96 % are required.

Does the PG-TTFN-9 package require solder paste stencil adjustments compared to standard SO-8?

Yes-the PG-TTFN-9 has a large exposed drain pad (Pins 5–8) requiring a custom stencil aperture with ≥80 % open area and thermal vias under the pad. Standard SO-8 stencils will cause insufficient solder volume and thermal delamination.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 2.2 V to 3.8 V at T_j = 25 °C. To ensure full enhancement and low R_DS(on), gate drive must deliver ≥6 V (preferably 10 V) with sufficient peak current (>2 A) to overcome Q_g = 106 nC within nanoseconds.

IQD016N08NM5CGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 323A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.57mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 159µA

Gate Charge (Qg) (Max) @ Vgs:: 133 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TTFN-9-U02

IQD016N08NM5CGATMA1 FAQ

1.How can I place an order for IQD016N08NM5CGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD016N08NM5CGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD016N08NM5CGATMA1 reliable?

The price and inventory of IQD016N08NM5CGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD016N08NM5CGATMA1 is usually 5 days.

3.What payment methods are accepted for IQD016N08NM5CGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD016N08NM5CGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD016N08NM5CGATMA1?

IQD016N08NM5CGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD016N08NM5CGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD016N08NM5CGATMA1?

For technical support, including IQD016N08NM5CGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD016N08NM5CGATMA1 requirements.

6.How does Aetrix verify that IQD016N08NM5CGATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD016N08NM5CGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD016N08NM5CGATMA1 meets industry standards.

7.What is the process for return or replacement of IQD016N08NM5CGATMA1?

All IQD016N08NM5CGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD016N08NM5CGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD016N08NM5CGATMA1 part is unused and in its original packaging.

Return procedure for IQD016N08NM5CGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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