Infineon Technologies IQD020N10NM5ATMA1

Overview

IQD020N10NM5ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-current, low-voltage switching in power conversion stages. It delivers 276 A continuous drain current at TC=25 °C, 100 V VDS rating, 2.05 mΩ max RDS(on) at VGS=10 V, and features integrated body diode with 256 A forward current capability - deployed in synchronous rectification of server VRMs and telecom DC-DC modules.

For engineers reviewing the IQD020N10NM5ATMA1 datasheet, IQD020N10NM5ATMA1 pinout, IQD020N10NM5ATMA1 application, or IQD020N10NM5ATMA1 equivalent, key selection criteria include its 107 nC total gate charge, 0.45 °C/W junction-to-case thermal resistance, 125 nC output charge, avalanche-rated ruggedness (756 mJ), and PG-TSON-8 package compatibility with high-density PCB layouts.

Technical Context

This OptiMOSTM 5-generation device uses trench-gate superjunction architecture to achieve ultra-low on-resistance while maintaining fast switching performance. Its 100 V breakdown voltage supports 48 V input bus architectures, and the 4.4 V gate plateau voltage enables robust drive margin under transient load conditions.

The MOSFET integrates a co-packaged body diode with 48 ns reverse recovery time (IF=25 A, diF/dt=100 A/µs) and 71 nC Qrr, enabling efficient synchronous operation without external Schottky replacement. Thermal design leverages direct die-to-case conduction via exposed drain pad in PG-TSON-8.

Key Specifications

Pinout & Package

PG-TSON-8 package with exposed drain pad (pins 5–8) for thermal and electrical connection; gate on pin 4; source on pins 1–3. Pin 1 is source, pin 4 is gate, pins 5–8 are parallel-connected drain terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Compared with STL220N10F7 and IXFH210N10P, IQD020N10NM5ATMA1 offers lowest RDS(on) and smallest form factor for high-frequency, high-density designs - but requires careful gate drive layout due to lower Qg threshold sensitivity.

Availability

IQD020N10NM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IQD020N10NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum allowable gate-source voltage for continuous operation?

The absolute maximum VGS rating is ±20 V, but continuous operation above 15 V is not recommended due to accelerated gate oxide stress. The device achieves full enhancement at VGS ≥ 10 V, and the gate plateau occurs at 4.4 V - ensuring stable switching behavior within 4.5–12 V drive range per JEDEC JESD47 reliability guidelines.

Can IQD020N10NM5ATMA1 be used in paralleled configurations?

Yes - its positive temperature coefficient of RDS(on) (1.8× increase from 25 °C to 175 °C) enables inherent current sharing. Layout must ensure matched gate loop inductance (<0.5 nH difference) and symmetrical source inductance to avoid dynamic imbalance; derating to 90% of total rated current is advised for 2× parallel operation.

Is the body diode suitable for synchronous rectification without external diode?

Yes - the integrated body diode is fully characterized with 48 ns trr (IF=25 A) and 71 nC Qrr, and is qualified for synchronous rectification in LLC and phase-shifted full-bridge topologies. Its VF of 0.82 V at 50 A and 25 °C provides lower forward drop than discrete Schottky diodes above 100 kHz switching.

What PCB layout practices maximize thermal performance?

Use ≥6 cm² of 70 µm thick copper on inner layer connected to pins 5–8 and the exposed drain pad; place thermal vias (≥12× 0.3 mm diameter) directly under the pad; avoid solder mask over thermal copper; and maintain ≥0.5 mm clearance between gate trace and high-dV/dt drain nodes to minimize capacitive coupling and false triggering.