Infineon Technologies IQD020N10NM5CGATMA1

Overview

IQD020N10NM5CGATMA1 from Infineon Technologies is an N-channel 100 V OptiMOSTM 5 power MOSFET in PG-TTFN-9 package, rated for 273 A continuous drain current at TC=25 °C, with max RDS(on) of 2.05 mΩ at VGS=10 V and 50 A, and 100% avalanche tested for industrial reliability.

For engineers reviewing the IQD020N10NM5CGATMA1 datasheet, IQD020N10NM5CGATMA1 pinout, IQD020N10NM5CGATMA1 application, or IQD020N10NM5CGATMA1 equivalent, key selection criteria include low RDS(on), high pulsed current capability (1092 A), gate charge (Qg = 107 nC), thermal resistance (RthJC = 0.45 °C/W), and synchronous FET gate drive compatibility.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for high-current DC-DC conversion and motor drive stages. It delivers stable RDS(on) across −55 °C to 175 °C junction temperature and supports fast switching with td(on)/tr = 15 ns/6 ns and Qgd = 23–35 nC under 50 V/50 A conditions.

The integrated body diode features trr = 48–96 ns and Qrr = 71–142 nC at IF = 25 A, enabling efficient synchronous rectification in buck converters and half-bridge topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

PG-TTFN-9 is a thermally enhanced 9-pin TOLL-style package with exposed drain pad on bottom side and source/gate terminals on top surface. Drain pins (5–8) are paralleled for current sharing; gate (pin 9) and source (pins 1–4) are isolated for low-inductance gate loop routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Compared with STL220N10F8AG and IXFH210N10T2, IQD020N10NM5CGATMA1 offers lowest RthJC (0.45 °C/W) and best-defined diode recovery (trr/Qrr), making it optimal for compact, high-power-density designs requiring predictable body diode behavior.

Availability

IQD020N10NM5CGATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IQD020N10NM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and qualification to JEDEC industrial standards.

This device belongs to the OptiMOSTM 5 family-engineered for high-current, high-efficiency power conversion in industrial and computing applications where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IQD020N10NM5CGATMA1 is qualified for continuous operation up to TJ = 175 °C, with derated ID and Ptot curves provided in Figures 2 and 1 of the datasheet. At TC = 100 °C, continuous drain current drops to 158 A per Table 2, ensuring safe thermal margin under sustained load.

Is this MOSFET suitable for synchronous rectification in a buck converter?

Yes-the device integrates a fast, low-loss body diode with trr = 48–96 ns and Qrr = 71–142 nC at IF = 25 A, verified in Table 7. Its low Qoss (125 nC) and tight VSD distribution (0.82–1.0 V) enable efficient synchronous operation without external diode supplementation.

Does the PG-TTFN-9 package require special PCB layout considerations?

Yes-drain pins 5–8 must be connected to a large, low-thermal-resistance copper pour (≥6 cm²) per Table 3's RthJA test condition. Source pins 1–4 should use short, wide traces to minimize loop inductance, and gate pin 9 requires controlled-impedance routing with local decoupling near the driver output.

How does the gate plateau voltage affect drive circuit design?

Vplateau = 4.4 V (Table 6) defines the Miller region voltage where most of Qgd is delivered. Gate drivers must supply ≥2 A peak current to traverse this plateau within <10 ns, and bootstrap or isolated supplies must maintain ≥6 V headroom above source to ensure full enhancement and avoid linear-mode operation.