Infineon Technologies IQD063N15NM5ATMA1

Overview

IQD063N15NM5ATMA1 from Infineon Technologies is an N-channel, normal-level 150 V OptiMOSTM 5 power MOSFET in PG-TSON-8 package, featuring 6.32 mΩ max R_DS(on), 148 A continuous drain current, 100% avalanche tested, and low Q_rr (55–390 nC) for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IQD063N15NM5ATMA1 datasheet, IQD063N15NM5ATMA1 pinout, IQD063N15NM5ATMA1 application, or IQD063N15NM5ATMA1 equivalent, key selection criteria include thermal resistance (R_thJC = 0.45 °C/W), gate charge profile (Q_g = 48–60 nC), and body diode recovery performance under high di/dt conditions.

Technical Context

This MOSFET employs Infineon's OptiMOSTM 5 silicon process optimized for high-voltage switching with minimized conduction and switching losses. Its 150 V V_DS rating and 6.32 mΩ R_DS(on) support operation in 48 V–100 V bus systems, while the integrated body diode exhibits low V_SD (0.83–1.0 V at 50 A) and controlled Q_rr across di/dt ranges (100–1000 A/µs).

The device uses a source-connected multi-pin layout (Pins 1–3) and drain-connected quad-pad configuration (Pins 5–8) to reduce parasitic inductance and improve current sharing. Gate drive is referenced to source (Pin 4), enabling standard gate driver compatibility without level-shifting in half-bridge or synchronous buck topologies.

Key Specifications

Pinout & Package

Package: PG-TSON-8 (3.3 mm × 3.3 mm × 0.9 mm), thermally enhanced surface-mount package with exposed drain paddle (Pins 5–8) and triple-source terminals (Pins 1–3) for low-inductance, high-current routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Compared with STL220N15F7AG and IXFH50N15X3, IQD063N15NM5ATMA1 offers superior thermal performance per unit area, verified avalanche ruggedness, and characterized Q_rr - making it optimal for compact, high-frequency, high-reliability DC-DC and motor drive stages where PCB-area and transient robustness are critical.

Availability

IQD063N15NM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial UPS inverters, EV onboard charger PFC stages, and BLDC motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for IQD063N15NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The OptiMOSTM 5 product line targets high-efficiency, high-power-density power conversion systems - specifically engineered for synchronous rectification, motor control, and telecom/server power supplies operating above 100 kHz.

FAQ

What is the maximum allowable gate-source voltage for IQD063N15NM5ATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of −10 V to +10 V. Exceeding +20 V risks permanent gate oxide damage, while negative gate bias below −10 V may cause unintended turn-on due to Miller capacitance coupling in high-dV/dt environments.

Can IQD063N15NM5ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Diagram 9) ensures current sharing stability across temperature. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥1 Ω) to dampen oscillation between devices.

Is the body diode suitable for continuous freewheeling in synchronous rectifier mode?

Yes - the body diode is rated for 148 A continuous forward current at T_C = 25 °C and exhibits V_SD = 0.83–1.0 V at 50 A (Diagram 12). However, its reverse recovery behavior must be managed via gate timing to avoid cross-conduction losses in high-frequency synchronous buck topologies.

Does IQD063N15NM5ATMA1 require a heatsink when operating at 100 A continuous current?

No external heatsink is required if mounted on ≥6 cm² of 70 µm copper on FR4 with vertical orientation in still air (R_thJA = 50 °C/W). At 100 A and 6.32 mΩ, conduction loss is ~63 W; junction temperature rise would be ~31.5 °C above ambient - well within the 150 °C T_j limit.