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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD063N15NM5CGATMA1

Name: IQD063N15NM5CGATMA1
Brand: Infineon Technologies
SKU: IQD063N15NM5CGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD063N15NM5CGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerTDFN

Datasheet:: IQD063N15NM5CGATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQD063N15NM5CGATMA1 from Infineon Technologies is an N-channel 150 V OptiMOSTM 5 power MOSFET in PG-TTFN-9 package, delivering 6.32 mΩ max R_DS(on) at V_GS = 10 V, 148 A continuous drain current, and 300 mJ single-pulse avalanche energy-designed for high-efficiency synchronous rectification in 48 V industrial DC-DC converters.

For engineers reviewing the IQD063N15NM5CGATMA1 datasheet, IQD063N15NM5CGATMA1 pinout, IQD063N15NM5CGATMA1 application, or IQD063N15NM5CGATMA1 equivalent, key selection criteria include low Q_rr (55–110 nC), fast switching (t_r = 5 ns, t_f = 4 ns), and robust thermal resistance (R_thJC = 0.45 °C/W) for high-power-density power stages.

Technical Context

This device implements a trench-gate, superjunction-enhanced silicon MOSFET architecture optimized for hard-switched and synchronous buck topologies. Its low gate charge (Q_g = 48–60 nC) and minimized reverse recovery charge (Q_rr) reduce switching losses in high-frequency (>500 kHz) power supplies.

The integrated body diode exhibits fast recovery (t_rr = 49–98 ns) and low forward voltage (V_SD = 0.83–1.0 V at 50 A), enabling efficient freewheeling without external Schottky diodes in synchronous rectifier configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 48 V input bus with ≥3× voltage margin for transient spikes in industrial SMPS
R_DS(on), max	6.32 mΩ at V_GS = 10 V - enables <1.6 W conduction loss at 50 A, critical for thermally constrained PCB layouts
I_D, cont.	148 A at T_C = 25 °C - sustains high-current output stages in server VRMs and telecom rectifiers
Q_rr	55–110 nC - reduces diode-induced switching loss and EMI in synchronous FET operation
E_AS	300 mJ - ensures reliable operation under inductive load switching and fault conditions without derating
R_thJC	0.45 °C/W - allows direct heatsink mounting for >278 W power dissipation at case temperature ≤25 °C
Q_g	48–60 nC - compatible with standard gate drivers (e.g., 1.6 Ω external resistor yields 11 ns t_d(on))

Pinout & Package

PG-TTFN-9 is a thermally enhanced 9-pin thin-flange no-lead package with exposed drain paddle (pins 5–8) for low-inductance, high-current routing and superior heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source	Low-side return path; electrically tied to internal source metallization and thermal pad on bottom side
5–8	Drain	Main power output node; connected to large copper area on PCB for current handling and thermal conduction
9	Gate	Control input; isolated by oxide layer; requires <20 V absolute max rating per datasheet

Key Features

Feature	Design Value
Very low R_DS(on)	6.32 mΩ max enables <1.6 W conduction loss at 50 A, reducing thermal footprint in compact converters
Low Q_rr and fast t_rr	55–110 nC Q_rr, 49–98 ns t_rr minimizes shoot-through risk and improves efficiency in synchronous rectification
100% avalanche tested	Guarantees robustness against inductive switching transients up to 300 mJ without parameter shift or failure
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21, supporting environmental compliance for industrial and automotive end equipment

Applications

Server VRM Power Stage

Industrial 48 V DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 48 V intermediate bus.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, operating at 500–1000 kHz with precise gate timing control.

Use Value: Low R_DS(on) and Q_rr cut conduction + switching losses by >18% vs. legacy 8 mΩ MOSFETs, improving VRM efficiency from 92% to 94.3% at 100 A.

Use Scenario: Isolated or non-isolated step-down converter powering PLC I/O modules, motor drives, or fieldbus interfaces.

IC Role / Device Role / Timing Role: Primary switching FET in hard-switched half-bridge or synchronous buck stage, rated for 150 V bus transients.

Use Value: 300 mJ E_AS and 0.45 °C/W R_thJC eliminate need for snubbers or oversized heatsinks in fanless enclosures.

Telecom Rectifier Module

Renewable Energy Battery Charger

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers converting -48 V AC/DC output to 12 V distribution bus.

IC Role / Device Role / Timing Role: Low-side synchronous FET replacing Schottky diodes in LLC or phase-shifted full-bridge secondary.

Use Value: V_SD = 0.83 V and t_rr = 49 ns reduce forward drop and reverse recovery loss, increasing full-load efficiency by 1.2% over discrete diode solutions.

Use Scenario: Bidirectional DC-DC stage in solar microinverters or battery energy storage systems interfacing 48–150 V battery banks with 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in active clamp or synchronous buck-boost topology, requiring 150 V blocking and avalanche ruggedness.

Use Value: Avalanche rating enables safe operation during battery short-circuit events and grid-swing transients without external protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N15F7	R_DS(on) = 5.5 mΩ (typ), Q_g = 62 nC, PG-HSOF-8 package, no integrated diode characterization data	Lacks published Q_rr and t_rr specs - unsuitable where synchronous rectifier diode performance is critical	Select only if gate drive strength permits higher Q_g and diode recovery is handled externally
IXFH50N15X3	R_DS(on) = 15 mΩ (max), TO-247 package, E_AS = 220 mJ, Q_rr = 140 nC	Higher conduction loss and slower diode recovery limit use in >300 kHz designs	Prefer for lower-cost, lower-frequency (<200 kHz) industrial inverters where thermal mass compensates for R_DS(on)

Compared with STL220N15F7 and IXFH50N15X3, IQD063N15NM5CGATMA1 delivers the lowest combined conduction–switching loss in high-frequency synchronous rectifiers due to its 6.32 mΩ R_DS(on), 55–110 nC Q_rr, and 0.45 °C/W thermal resistance - making it optimal for space-constrained, efficiency-critical 48 V power delivery.

Availability

IQD063N15NM5CGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for IQD063N15NM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 5 family - engineered for high-efficiency, high-current switching in industrial and computing power supplies, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for IQD063N15NM5CGATMA1?

The absolute maximum V_GS is ±20 V per the datasheet. Operation above +10 V or below −5 V does not improve R_DS(on) but increases gate oxide stress and risk of premature wear-out. Recommended drive range is 8–10 V for optimal conduction loss versus reliability trade-off.

Can IQD063N15NM5CGATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing across paralleled units. Thermal coupling via shared heatsink and matched gate drive layout (≤5% trace length mismatch) is required to maintain balance within ±8% current deviation at full load.

Does this MOSFET require a gate resistor for stability?

A gate resistor (1.6 Ω typical) is required to dampen ringing caused by gate-drain capacitance (C_rss = 21–37 pF) and PCB inductance. Without it, overshoot exceeding 20 V can occur during turn-on, risking gate oxide breakdown. Layout must minimize loop inductance between driver, resistor, and gate pin.

Is the body diode suitable for continuous reverse conduction in synchronous rectification?

Yes - the diode is rated for 148 A continuous forward current (I_S) at T_C = 25 °C and characterized for V_SD = 0.83 V at 50 A and 25 °C. Its 49–98 ns t_rr and low Q_rr make it suitable for high-frequency synchronous rectification without external diode supplementation.

IQD063N15NM5CGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 14.1A (Ta), 148A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 6.32mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 159µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TTFN-9-U02

IQD063N15NM5CGATMA1 FAQ

1.How can I place an order for IQD063N15NM5CGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD063N15NM5CGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD063N15NM5CGATMA1 reliable?

The price and inventory of IQD063N15NM5CGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD063N15NM5CGATMA1 is usually 5 days.

3.What payment methods are accepted for IQD063N15NM5CGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD063N15NM5CGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD063N15NM5CGATMA1?

IQD063N15NM5CGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD063N15NM5CGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD063N15NM5CGATMA1?

For technical support, including IQD063N15NM5CGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD063N15NM5CGATMA1 requirements.

6.How does Aetrix verify that IQD063N15NM5CGATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD063N15NM5CGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD063N15NM5CGATMA1 meets industry standards.

7.What is the process for return or replacement of IQD063N15NM5CGATMA1?

All IQD063N15NM5CGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD063N15NM5CGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD063N15NM5CGATMA1 part is unused and in its original packaging.

Return procedure for IQD063N15NM5CGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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