Infineon Technologies IQDH35N03LM5ATMA1

Overview

IQDH35N03LM5ATMA1 from Infineon Technologies is an N-channel logic-level OptiMOSTM 5 power MOSFET rated for 30 V drain-source voltage, 700 A continuous drain current at TC = 25 °C, and 0.35 mΩ maximum RDS(on) at VGS = 10 V. It features integrated body diode, 100% avalanche tested ruggedness, and PG-TSON-8 package optimized for high-current DC-DC converters and synchronous rectification in server VRMs.

For engineers reviewing the IQDH35N03LM5ATMA1 datasheet, IQDH35N03LM5ATMA1 pinout, IQDH35N03LM5ATMA1 application, or IQDH35N03LM5ATMA1 equivalent, key selection criteria include its ultra-low RDS(on), Qg of 91 nC (VGS = 0–4.5 V), Qoss of 95 nC, thermal resistance RthJC of 0.45 °C/W, and suitability for high-frequency synchronous buck topologies with strict conduction and switching loss budgets.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized cell pitch and deep-trench source design to achieve sub-0.4 mΩ on-resistance while maintaining fast switching (td(on) = 12 ns, tf = 14 ns) and low gate charge. Its logic-level threshold (VGS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device integrates a robust intrinsic body diode with trr = 49–98 ns and Qrr = 64–304 nC depending on diF/dt, supporting hard-switched and synchronous rectifier operation. Thermal performance is validated via JEDEC industrial qualification, with RthJA = 50 °C/W on 6 cm² FR4 PCB and junction-to-case resistance fixed at 0.45 °C/W.

Key Specifications

Pinout & Package

Package: PG-TSON-8 (exposed drain pad), 5 mm × 6 mm footprint, 0.85 mm height, RoHS-compliant, halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 30 V power MOSFET applications.

Compared with IRLH2272PBF and SISD10DN03LT, IQDH35N03LM5ATMA1 delivers the lowest RDS(on) × RthJC product (0.157 mΩ·°C/W), enabling highest current density per phase while maintaining junction temperature below 125 °C under full load with standard 6 cm² cooling.

Availability

IQDH35N03LM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial motor drives, and high-power USB PD3.1 adapters requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IQDH35N03LM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM 5 family-engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where ultra-low RDS(on) and fast, predictable switching are mandatory.

FAQ

What is the maximum continuous drain current rating for IQDH35N03LM5ATMA1 at 100 °C case temperature?

The datasheet specifies ID = 443 A at TC = 100 °C and VGS = 10 V. This derating reflects thermal limitations of the PG-TSON-8 package under real-world heatsinking conditions. At TC = 100 °C, RDS(on) rises to ~0.42 mΩ, increasing conduction loss proportionally. Designers must verify junction temperature using RthJC = 0.45 °C/W and ensure TJ ≤ 150 °C.

Does IQDH35N03LM5ATMA1 support 3.3 V gate drive in logic-level operation?

Yes. With VGS(th) ranging from 1.2 V to 2.0 V and RDS(on) = 0.36 mΩ max at VGS = 4.5 V and ID = 50 A, the device fully enhances at 3.3 V gate drive. However, RDS(on) increases to ~0.55 mΩ at 3.3 V, raising conduction loss by ~60% versus 10 V drive-acceptable in space-constrained designs where gate driver voltage is limited.

How is the internal body diode characterized for reverse recovery in synchronous rectifier use?

The body diode exhibits trr = 49–98 ns and Qrr = 64–304 nC depending on diF/dt and IF. At IF = 25 A and diF/dt = 100 A/µs, Qrr = 64 nC supports clean commutation in 500 kHz buck converters. The diode's soft recovery behavior minimizes voltage overshoot and EMI, verified across –55 °C to +150 °C junction temperatures per JEDEC test conditions.

Is IQDH35N03LM5ATMA1 pin-compatible with earlier OptiMOSTM generations in PG-TSON-8?

No. While sharing the PG-TSON-8 outline, IQDH35N03LM5ATMA1 uses a 5–8 drain / 1–3 source / 4 gate pin assignment distinct from OptiMOSTM 3 (e.g., IQD35N03L) which assigns drain to pins 1–4. PCB layout must be revised to match the new terminal mapping; no mechanical or electrical drop-in replacement exists within the OptiMOSTM family.