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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH45N04LM6ATMA1

Name: IQDH45N04LM6ATMA1
Brand: Infineon Technologies
SKU: IQDH45N04LM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH45N04LM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IQDH45N04LM6ATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQDH45N04LM6ATMA1 from Infineon Technologies is a 40 V, logic-level N-channel Trench MOSFET in PG-TSON-8 package with 0.45 mΩ max R_DS(on) at V_GS = 10 V, 637 A continuous drain current (T_C = 25 °C), and 100% avalanche tested for industrial power stages. It integrates an internal body diode and targets high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the IQDH45N04LM6ATMA1 datasheet, IQDH45N04LM6ATMA1 pinout, IQDH45N04LM6ATMA1 application, or IQDH45N04LM6ATMA1 equivalent, key selection criteria include its ultra-low on-resistance, 142 nC output charge (Q_OSS), 62 nC total gate charge (Q_G), thermal resistance of 0.45 °C/W (R_thJC), and logic-level gate drive compatibility down to 4.5 V.

Technical Context

This OptiMOSTM 6 device uses advanced Trench stop-gate technology optimized for low conduction and switching losses in high-current, high-frequency power conversion. Its 0.45 mΩ R_DS(on) enables <1.5 W conduction loss at 50 A, while Q_G = 62 nC and Q_GD = 15–23 nC support fast, controllable turn-on/turn-off transitions under 1.6 Ω external gate resistance.

The integrated body diode exhibits V_SD = 0.73 V (typ.) at 20 A and T_j = 25 °C, with trr = 31–108 ns depending on di/dt, making it suitable for synchronous FET operation where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V/48 V bus applications with margin against transients.
R_DS(on), max	0.45 mΩ at V_GS = 10 V - Enables sub-1 W conduction loss at 50 A, critical for high-current power stages.
I_D, cont	637 A at T_C = 25 °C - Supports high-power density designs without parallel devices in compact PCB layouts.
Q_OSS	142 nC - Low output capacitance charge reduces switching loss during hard-switched turn-on events.
Q_G	62 nC at V_GS = 0–4.5 V - Matches logic-level drivers and enables efficient gate driving with minimal IC overhead.
R_thJC	0.45 °C/W - Allows >300 W power dissipation with modest heatsinking, enabling high thermal reliability.
E_AS	1200 mJ - Confirmed single-pulse avalanche capability supports robustness in inductive load switching.

Pinout & Package

Package: PG-TSON-8 (exposed drain pad), 5 mm × 6 mm footprint, 0.8 mm height, RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1–3 (Source)	Source connection (low-side reference)	Three parallel pins reduce source inductance and improve current sharing in high-di/dt operation.
4 (Gate)	Control terminal	Single-pin gate input compatible with standard logic-level drivers; RG = 0.68 Ω (internal).
5–8 (Drain)	Power output / heat sink node	Four-pin drain connection maximizes thermal transfer to PCB copper and minimizes power loop inductance.

Key Features

Feature	Design Value
N-channel logic-level operation	Guaranteed turn-on at V_GS = 4.5 V (V_GS(th) = 1.3–2.3 V), eliminating need for gate boosters in 5 V or 3.3 V control systems.
Ultra-low R_DS(on)	0.45 mΩ max at 10 V drive enables >98% efficiency in 48 V→12 V buck converters at 100 A output.
100% avalanche tested	Each unit validated to withstand 1200 mJ single-pulse avalanche energy, ensuring field reliability in motor drive or UPS fault conditions.
Optimized for synchronous rectification	Low Q_rr (277–554 nC) and fast trr (31–108 ns) minimize body diode conduction loss and reverse recovery spikes.
Superior thermal resistance	R_thJC = 0.45 °C/W allows >333 W power dissipation at T_C = 25 °C, supporting high-current operation without forced air cooling.

Applications

Server VRMs

Industrial DC/DC Converters

Use Scenario: High-current point-of-load regulation in AI accelerator servers delivering up to 600 A per rail.

IC Role / Device Role / Timing Role: Synchronous high-side or low-side power switch in multiphase buck converters operating at 500 kHz–1 MHz.

Use Value: 0.45 mΩ R_DS(on) cuts conduction loss by >40% vs. legacy 0.8 mΩ MOSFETs, reducing thermal load on VRM PCBs.

Use Scenario: Isolated 48 V-to-12 V telecom power supplies with strict efficiency and size constraints.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC resonant topologies.

Use Value: 142 nC Q_OSS and 62 nC Q_G enable low switching loss at 300–700 kHz, achieving >96% full-load efficiency.

Automotive On-Board Chargers

Energy Storage Systems

Use Scenario: Bidirectional AC/DC and DC/DC stages in 11 kW OBC modules for EV charging.

IC Role / Device Role / Timing Role: Low-side switch in interleaved totem-pole PFC and isolated DC/DC stages.

Use Value: 100% avalanche rating ensures survivability during line surge events and inductive kickback in automotive environments.

Use Scenario: High-power battery management units (BMUs) handling 200–500 A charge/discharge currents.

IC Role / Device Role / Timing Role: Solid-state contactor replacement in high-side main battery disconnect circuits.

Use Value: 637 A I_D rating and 0.45 °C/W R_thJC allow direct PCB mounting without discrete heatsinks, saving board space and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(on) = 0.55 mΩ (max), Q_G = 72 nC, same PG-TSON-8 package, but higher R_thJC = 0.55 °C/W	Slightly lower peak current capability (580 A vs. 637 A); less suited for >500 A continuous duty	Prefer when existing layout uses IRFH7107 footprint and marginal R_DS(on) increase is acceptable.
STL220N4LF8AG	R_DS(on) = 0.42 mΩ (max), Q_G = 84 nC, wider gate threshold (1.0–2.5 V), different pinout (drain/source swapped)	Higher gate charge increases driver loss; pinout mismatch requires PCB redesign	Select only if lowest possible R_DS(on) is primary goal and layout revision is feasible.

Compared with IRFH7107TRPBF and STL220N4LF8AG, IQDH45N04LM6ATMA1 delivers the best balance of ultra-low on-resistance, moderate gate charge, and industry-standard pinout-enabling drop-in upgrades in high-current server and industrial DC/DC designs without compromising thermal or switching performance.

Availability

IQDH45N04LM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive on-board chargers requiring stable component supply and long-term production continuity.

Supply support for IQDH45N04LM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

This device belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-current power conversion in data center, telecom, and industrial applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQDH45N04LM6ATMA1 supports 451 A continuous drain current at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits under real-world heatsink conditions and must be verified against actual PCB copper area and airflow.

Does this MOSFET require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage range of 1.3–2.3 V and is fully compatible with 0 V to 10 V gate drive. Negative gate bias is not required or recommended; standard logic-level drivers (e.g., UCC27531, IRS2007) operate it safely within datasheet limits.

Can IQDH45N04LM6ATMA1 be used as a high-side switch in a floating configuration?

Yes-it supports high-side operation when paired with a gate driver capable of level-shifting (e.g., bootstrap or isolated gate driver). Its V_GS rating of ±20 V and 40 V V_DS rating allow use in high-side configurations up to 40 V bus voltage, provided gate drive remains referenced to source.

Is the internal body diode suitable for reverse conduction in synchronous rectification?

Yes-the body diode is characterized with V_SD = 0.73 V (typ.) at 20 A and T_j = 25 °C, and trr = 31–108 ns depending on di/dt. It is explicitly qualified for synchronous rectifier use, and Q_rr values (277–554 nC) are provided to support accurate loss modeling in soft- and hard-switched topologies.

IQDH45N04LM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Ta), 637A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.45mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 1.449mA

Gate Charge (Qg) (Max) @ Vgs:: 172 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-9

IQDH45N04LM6ATMA1 FAQ

1.How can I place an order for IQDH45N04LM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH45N04LM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH45N04LM6ATMA1 reliable?

The price and inventory of IQDH45N04LM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH45N04LM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH45N04LM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH45N04LM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH45N04LM6ATMA1?

IQDH45N04LM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH45N04LM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH45N04LM6ATMA1?

For technical support, including IQDH45N04LM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH45N04LM6ATMA1 requirements.

6.How does Aetrix verify that IQDH45N04LM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH45N04LM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH45N04LM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH45N04LM6ATMA1?

All IQDH45N04LM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH45N04LM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH45N04LM6ATMA1 part is unused and in its original packaging.

Return procedure for IQDH45N04LM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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