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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH88N06LM5CGATMA1

Name: IQDH88N06LM5CGATMA1
Brand: Infineon Technologies
SKU: IQDH88N06LM5CGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH88N06LM5CGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerTDFN

Datasheet:: IQDH88N06LM5CGATMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQDH88N06LM5CGATMA1 from Infineon Technologies is an N-channel logic-level 60 V OptiMOSTM 5 power MOSFET in PG-TTFN-9 package, featuring 0.86 mΩ max R_DS(on), 447 A continuous drain current at T_C=25 °C, and 100% avalanche tested performance for high-current synchronous rectification in DC-DC converters.

For engineers reviewing the IQDH88N06LM5CGATMA1 datasheet, IQDH88N06LM5CGATMA1 pinout, IQDH88N06LM5CGATMA1 application, or IQDH88N06LM5CGATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, thermal resistance of 0.45 °C/W (junction-to-case), and validated industrial-grade reliability per JEDEC standards.

Technical Context

This MOSFET employs trench-gate superjunction technology optimized for high-efficiency, high-current switching in synchronous buck converters and OR-ing applications. Its logic-level gate threshold (1.1–2.3 V) enables direct drive from microcontrollers or PWM controllers without level-shifting, while its 133 nC Q_oss and 76 nC total gate charge support fast, low-loss transitions at up to 1 MHz switching frequencies.

The device integrates a robust body diode with 44 ns typical reverse recovery time and 49 nC Q_rr, enabling efficient freewheeling in hard-switched topologies. Its PG-TTFN-9 package places all four source terminals (Pins 1–4) and four drain terminals (Pins 5–8) on dedicated low-inductance pads, with isolated gate (Pin 9) for noise-immune control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V input bus systems and automotive 42 V nominal architectures
R_DS(on), max	0.86 mΩ @ V_GS=10 V, I_D=50 A - Enables <1 W conduction loss at 400 A in parallel configurations
I_D, cont.	447 A @ T_C=25 °C - Supports single-device operation in high-power server VRMs and EV onboard chargers
Q_G	76 nC @ V_GS=0–4.5 V - Matches standard gate drivers (e.g., UCC2753x) without external boost circuitry
R_thJC	0.45 °C/W - Allows >300 W power dissipation with modest heatsinking (e.g., 25 mm² copper area)
E_AS	1115 mJ - Withstands single-pulse inductive energy in motor drive fault conditions without failure
V_GS(th)	1.1–2.3 V - Ensures turn-on with 3.3 V logic and stable operation across –55 to +175 °C junction range

Pinout & Package

PG-TTFN-9 is a thermally enhanced 9-pin thin-flange no-lead package with exposed drain paddle (Pins 5–8), quad-source configuration (Pins 1–4), and single gate terminal (Pin 9). The layout minimizes parasitic inductance and maximizes thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–4	Source	Four parallel low-inductance source connections reduce common-source inductance and improve current sharing in paralleled layouts
Pins 5–8	Drain	Four dedicated drain terminals tied to internal die paddle; enable uniform current distribution and <0.5 nH loop inductance
Pin 9	Gate	Isolated gate input with controlled impedance path; decoupling capacitor placement adjacent to Pin 9 suppresses ringing

Key Features

Feature	Design Value
N-channel logic-level operation	Guaranteed turn-on at 3.3 V MCU outputs, eliminating need for gate driver ICs in space-constrained designs
0.86 mΩ R_DS(on) at 10 V	Reduces conduction loss by >35% vs. legacy 1.5 mΩ 60 V MOSFETs in 48 V–12 V buck stages
100% avalanche rated	Validated to survive 1115 mJ single-pulse energy-critical for unclamped inductive switching in motor drives
Pb-free, halogen-free	Complies with RoHS and IEC61249-2-21; suitable for automotive and industrial end-equipment requiring full material declaration
JEDEC industrial qualification	Stable parametric performance over –55 to +175 °C, including gate threshold drift <±0.2 V across full temperature range

Applications

Server Voltage Regulator Modules

Automotive 48 V DC-DC Converters

Use Scenario: High-density 48 V–12 V step-down conversion in AI accelerator cards with >600 A load current.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating in continuous conduction mode at 500 kHz–1 MHz.

Use Value: 0.45 °C/W R_thJC enables 447 A rating with minimal heatsink; 0.86 mΩ R_DS(on) cuts conduction loss by 2.1 W vs. 1.2 mΩ alternative.

Use Scenario: Bidirectional 48 V–12 V converter in mild-hybrid vehicles supporting regenerative braking and start-stop.

IC Role / Device Role / Timing Role: Low-side synchronous FET in dual-phase interleaved topology with 300 kHz switching.

Use Value: 44 ns t_rr and 49 nC Q_rr minimize body-diode conduction loss during dead-time; JEDEC industrial qualification ensures 15-year field life.

Industrial Motor Drive Inverters

High-Power OR-ing Circuits

Use Scenario: 3-phase inverter stage for 15 kW servo drives with peak phase current >300 A.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, handling freewheeling current.

Use Value: 1115 mJ E_AS withstands unclamped inductive kickback during short-circuit events; 175 °C max T_j supports compact enclosure thermal design.

Use Scenario: Redundant 48 V power supply OR-ing in telecom rectifier shelves with hot-swap capability.

IC Role / Device Role / Timing Role: Active OR-ing FET replacing Schottky diodes to reduce forward drop and heat generation.

Use Value: 0.77 V typical V_SD at 50 A enables >98% efficiency vs. 0.45 V Schottky drop at same current; 271 A I_S rating supports full-load redundancy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH8325TRPBF	R_DS(on) = 0.95 mΩ @ 10 V; Q_G = 82 nC; PG-HSOF-8 package with 2 drain/source pins	Higher gate charge increases driver losses; smaller package limits thermal headroom above 300 A	Select when footprint compatibility with HSOF-8 is required and peak current ≤320 A
STL220N6F7AG	R_DS(on) = 0.75 mΩ @ 10 V; Q_G = 105 nC; PowerFLAT 8x8 HV package with 4 drain/source terminals	Lower R_DS(on) improves conduction loss but higher Q_G degrades switching efficiency above 300 kHz	Select for ultra-low R_DS(on) priority in <300 kHz applications where gate drive strength permits

Compared with IRFH8325TRPBF and STL220N6F7AG, IQDH88N06LM5CGATMA1 delivers optimal balance of ultra-low R_DS(on), moderate Q_G, and industry-leading thermal resistance-making it preferred for >400 A, >500 kHz, and high-reliability industrial deployments.

Availability

IQDH88N06LM5CGATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive 48 V DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IQDH88N06LM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, automotive, and industrial power systems where thermal density and reliability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQDH88N06LM5CGATMA1 supports 263 A continuous drain current at T_C = 100 °C with V_GS = 4.5 V, as specified in Table 2 of the datasheet. This derating reflects thermal constraints under real-world heatsink conditions and must be verified against actual board layout and airflow.

Does this MOSFET require a gate resistor for stability in high-frequency operation?

Yes-a 1.6 Ω external gate resistor is used in the datasheet's switching time test conditions (Table 5) to dampen ringing and control dV/dt. For 500 kHz+ operation, a 1–3 Ω non-inductive resistor placed adjacent to Pin 9 is recommended to ensure clean turn-on/turn-off waveforms.

Can IQDH88N06LM5CGATMA1 be paralleled with identical units?

Yes-its matched R_DS(on) tolerance (±15%), low gate threshold variation (1.1–2.3 V), and symmetrical quad-source/drain layout enable stable current sharing. Use identical gate drive paths, Kelvin source routing, and thermal coupling to maintain <5% current imbalance at full load.

What is the significance of the "100% avalanche tested" qualification?

Each unit undergoes single-pulse avalanche stress testing to 1115 mJ at I_D = 50 A, verifying ruggedness against inductive energy spikes in motor drives and power supplies. This is not a statistical sample test-it applies to 100% of shipped units per Infineon's industrial qualification protocol.

IQDH88N06LM5CGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Ta), 447A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.86mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 163µA

Gate Charge (Qg) (Max) @ Vgs:: 152 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TTFN-9-U02

IQDH88N06LM5CGATMA1 FAQ

1.How can I place an order for IQDH88N06LM5CGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH88N06LM5CGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH88N06LM5CGATMA1 reliable?

The price and inventory of IQDH88N06LM5CGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH88N06LM5CGATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH88N06LM5CGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH88N06LM5CGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH88N06LM5CGATMA1?

IQDH88N06LM5CGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH88N06LM5CGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH88N06LM5CGATMA1?

For technical support, including IQDH88N06LM5CGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH88N06LM5CGATMA1 requirements.

6.How does Aetrix verify that IQDH88N06LM5CGATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH88N06LM5CGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH88N06LM5CGATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH88N06LM5CGATMA1?

All IQDH88N06LM5CGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH88N06LM5CGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH88N06LM5CGATMA1 part is unused and in its original packaging.

Return procedure for IQDH88N06LM5CGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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