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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE004NE1LM7CGATMA1

Name: IQE004NE1LM7CGATMA1
Brand: Infineon Technologies
SKU: IQE004NE1LM7CGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE004NE1LM7CGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerTDFN

Datasheet:: IQE004NE1LM7CGATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQE004NE1LM7CGATMA1 from Infineon Technologies is an N-channel logic-level OptiMOSTM 7 power MOSFET rated for 15 V drain-source voltage, 0.45 mΩ max R_DS(on) at V_GS = 7 V, 379 A continuous drain current (T_C = 25 °C), and fully qualified for industrial applications per JEDEC. It features ultra-low on-resistance, 100% avalanche tested ruggedness, and optimized thermal resistance (R_thJC = 1.4 °C/W) for high-efficiency synchronous rectification in SMPS.

For engineers reviewing the IQE004NE1LM7CGATMA1 datasheet, IQE004NE1LM7CGATMA1 pinout, IQE004NE1LM7CGATMA1 application, or IQE004NE1LM7CGATMA1 equivalent, key selection criteria include its 0.45 mΩ R_DS(on), 27 nC Q_oss, 29 nC total gate charge, PG-TTFN-9 package with isolated source terminals, and suitability for high-current DC-DC converters requiring low conduction loss and fast switching.

Technical Context

This MOSFET employs a trench-based silicon process optimized for logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V) and minimal switching losses. Its dynamic parameters-Q_gd = 5.7–8.5 nC, t_r = 2 ns, t_f = 4 ns-support high-frequency operation up to 1 MHz in resonant and hard-switched topologies.

The device integrates a robust body diode with t_rr = 25–62 ns and Q_rr = 24–98 nC, enabling efficient synchronous rectification without external Schottky diodes. Thermal design is enabled by its low junction-to-case resistance (1.4 °C/W) and validated 6 cm² PCB cooling requirement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	15 V - Maximum blocking voltage for low-voltage, high-current DC-DC stages (e.g., 12 V input to 1 V output).
R_DS(on), max	0.45 mΩ at V_GS = 7 V - Enables <1.5 W conduction loss at 30 A, critical for >95% efficiency in server VRMs.
I_D, cont	379 A at T_C = 25 °C - Supports single-device implementation in high-power POL converters without paralleling.
Q_oss	27 nC - Low output charge reduces turn-off energy loss and improves light-load efficiency in ZVS/ZCS circuits.
R_thJC	1.4 °C/W - Allows direct heatsink mounting with minimal thermal interface resistance for compact thermal design.
Q_g	29 nC at V_GS = 0–4.5 V - Matches standard gate drivers (e.g., UCC2753x) without requiring high-current buffer stages.
E_AS	859 mJ - Confirmed single-pulse avalanche capability supports robustness against inductive switching transients.

Pinout & Package

Package: PG-TTFN-9 - Thermally enhanced 9-pin thin-flange no-lead package with exposed drain paddle and isolated source terminals (pins 1–4) for parallel current paths and reduced parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8)	Main current path collector	Four parallel drain pins reduce bond wire inductance and enable >300 A current sharing across internal die segments.
Gate (Pin 9)	Control terminal	Single low-inductance gate connection minimizes ringing during fast dV/dt switching (dV/dt > 10 V/ns).
Source (Pins 1–4)	Reference and return path	Four dedicated source pins provide Kelvin sensing capability and separate high-current return from gate drive reference.

Key Features

Feature	Design Value
N-channel logic-level operation	V_GS(th) = 1.2–2.0 V enables direct drive from 3.3 V/5 V microcontrollers and PWM controllers without level-shifting.
Ultra-low R_DS(on)	0.45 mΩ max at 7 V gate drive delivers <0.5 W conduction loss at 200 A, reducing thermal stress in high-density modules.
100% avalanche tested	Each unit passes single-pulse E_AS = 859 mJ test, ensuring reliability in unclamped inductive load switching events.
Optimized for synchronous rectification	Low Q_rr (24–98 nC) and fast t_rr (25–62 ns) minimize reverse recovery loss and cross-conduction risk in LLC and buck converters.
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 halogen-free construction meet automotive and industrial environmental compliance requirements.

Applications

Server Voltage Regulator Modules (VRMs)

AI Accelerator Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V at up to 1000 A to GPU/ASIC dies.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 0.45 mΩ R_DS(on) cuts conduction loss by >40% vs. legacy 0.8 mΩ devices, enabling higher power density without forced air cooling.

Use Scenario: Point-of-load regulator on AI training card delivering transient-heavy 50–200 A loads with <1 µs response.

IC Role / Device Role / Timing Role: High-side switch in dual-active-buck topology, leveraging fast t_r/t_f (2 ns/4 ns) for minimal switching loss during rapid load steps.

Use Value: 29 nC Q_g allows full turn-on with <100 ns gate delay using standard 4-A drivers, improving transient regulation fidelity.

Industrial 48 V DC-DC Converters

EV On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: Isolated flyback or active-clamp forward converter powering PLC I/O modules from 48 V bus.

IC Role / Device Role / Timing Role: Primary-side MOSFET in self-driven synchronous rectifier configuration, operating at 200–300 kHz.

Use Value: 1.4 °C/W R_thJC permits direct heatsink mounting on metal-core PCBs, eliminating thermal vias and simplifying mechanical layout.

Use Scenario: Secondary-side synchronous rectifier in 1–3 kW OBC auxiliary supply (12 V/24 V output).

IC Role / Device Role / Timing Role: Low-side rectifier in center-tapped forward topology, handling 87 A continuous diode current (I_S).

Use Value: Body diode V_SD = 0.76 V @ 30 A reduces forward drop vs. discrete Schottky, lowering heat generation in sealed OBC enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N15N5	R_DS(on) = 0.55 mΩ (higher), Q_g = 32 nC (higher), same PG-TTFN-9 package	Marginally lower efficiency in >200 A applications due to +22% conduction loss	Select when cost sensitivity outweighs 0.1 mΩ R_DS(on) advantage and thermal margin is sufficient.
IRFH7107TRPBF	R_DS(on) = 0.48 mΩ, Q_oss = 34 nC (+26%), different PQFN 5×6 mm package (no isolated source pins)	Limited current sharing capability and higher switching loss in high-frequency SMPS	Prefer only if existing PCB layout uses 5×6 mm footprint and gate drive strength exceeds 5 A peak.

Compared with IPB017N15N5 and IRFH7107TRPBF, IQE004NE1LM7CGATMA1 delivers the lowest R_DS(on) and Q_oss in its class, enabling highest efficiency in space-constrained, high-current VRMs where thermal headroom and switching frequency are critical.

Availability

IQE004NE1LM7CGATMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power delivery, industrial 48 V DC-DC converters, and EV on-board charger auxiliary supplies requiring stable component supply and long-term industrial qualification.

Supply support for IQE004NE1LM7CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM 7 product line, engineered specifically for high-current, high-efficiency power conversion in datacenter, AI, and industrial applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IQE004NE1LM7CGATMA1?

The absolute maximum DC gate-source voltage is ±7 V, with transient tolerance up to ±8 V for pulses shorter than 20 ns. Exceeding ±7 V continuously risks gate oxide degradation; gate driver designs must include clamping (e.g., Zener diodes) to ensure V_GS remains within this limit during switching transitions and noise events.

Can IQE004NE1LM7CGATMA1 be used in parallel configurations?

Yes-its PG-TTFN-9 package features four isolated source pins (1–4) and four parallel drain pins (5–8), enabling symmetrical current sharing. Matching R_DS(on) tolerance (±10%) and identical gate loop inductance across paralleled units are required; external gate resistors (1–2 Ω) are recommended to dampen oscillation.

What is the thermal derating behavior above 25 °C case temperature?

Power dissipation decreases linearly: P_tot = 89 W × (1 − (T_C − 25)/150) for T_C up to 175 °C. At T_C = 100 °C, rated power drops to 44.5 W; continuous drain current derates to 240 A. Diagram 2 in the datasheet provides exact ID vs. TC curves for V_GS ≥ 10 V.

Is the body diode suitable for freewheeling in non-synchronous topologies?

Yes-the integrated body diode is characterized with I_S = 87 A continuous and t_rr = 25–62 ns. However, its Q_rr (24–98 nC) is significantly higher than discrete Schottky diodes; use only in low-frequency (<100 kHz) or low-dI/dt applications unless synchronous control is implemented to actively clamp reverse recovery.

IQE004NE1LM7CGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 9-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 15 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Ta), 379A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 0.45mOhm @ 30A, 7V

Vgs(th) (Max) @ Id:: 2V @ 432µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 7 V

Vgs (Max):: ±7V

Input Capacitance (Ciss) (Max) @ Vds:: 6240 pF @ 7.5 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TTFN-9-3

IQE004NE1LM7CGATMA1 FAQ

1.How can I place an order for IQE004NE1LM7CGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE004NE1LM7CGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE004NE1LM7CGATMA1 reliable?

The price and inventory of IQE004NE1LM7CGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE004NE1LM7CGATMA1 is usually 5 days.

3.What payment methods are accepted for IQE004NE1LM7CGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE004NE1LM7CGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE004NE1LM7CGATMA1?

IQE004NE1LM7CGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE004NE1LM7CGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE004NE1LM7CGATMA1?

For technical support, including IQE004NE1LM7CGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE004NE1LM7CGATMA1 requirements.

6.How does Aetrix verify that IQE004NE1LM7CGATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE004NE1LM7CGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE004NE1LM7CGATMA1 meets industry standards.

7.What is the process for return or replacement of IQE004NE1LM7CGATMA1?

All IQE004NE1LM7CGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE004NE1LM7CGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE004NE1LM7CGATMA1 part is unused and in its original packaging.

Return procedure for IQE004NE1LM7CGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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