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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE004NE1LM7CGSCATMA1

Name: IQE004NE1LM7CGSCATMA1
Brand: Infineon Technologies
SKU: IQE004NE1LM7CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE004NE1LM7CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQE004NE1LM7CGSCATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQE004NE1LM7CGSCATMA1 from Infineon Technologies is an N-channel logic-level OptiMOSTM 7 power MOSFET rated for 15 V V_DS, 379 A continuous drain current at T_C = 25 °C, and ultra-low 0.45 mΩ max R_DS(on) at V_GS = 7 V. It features integrated body diode, 100% avalanche tested ruggedness, and PG-WHTFN-9 package optimized for high-density synchronous rectification in server VRMs and AI accelerator power stages.

For engineers reviewing the IQE004NE1LM7CGSCATMA1 datasheet, IQE004NE1LM7CGSCATMA1 pinout, IQE004NE1LM7CGSCATMA1 application, or IQE004NE1LM7CGSCATMA1 equivalent, key selection criteria include its 0.45 mΩ R_DS(on), 27 nC Q_OSS, 29 nC Q_G, thermal resistance of 1.4 °C/W (junction-to-case, bottom), and PG-WHTFN-9 footprint compatibility with high-current PCB copper planes.

Technical Context

This MOSFET employs a trench-gate superjunction structure enabling sub-milliohm on-resistance at 15 V rating while maintaining fast switching (t_d(on) = 9 ns, t_f = 4 ns) and low gate charge (Q_G = 29 nC typ). Its dual-side cooling capability-1.4 °C/W via bottom thermal pad and 0.7 °C/W via top surface-supports high-power density designs where thermal management is constrained.

The device integrates a robust body diode with 87 A continuous forward current, 31–62 ns reverse recovery time, and 24–98 nC Q_RR, making it suitable for hard-switched synchronous rectification without external Schottky replacement. Gate threshold voltage is tightly distributed (1.2–2.0 V), ensuring stable turn-on behavior across industrial temperature range (−55 to +150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	15 V - Maximum blocking voltage for low-voltage, high-current DC-DC conversion stages.
R_DS(on), max	0.45 mΩ at V_GS = 7 V - Enables <1.2 W conduction loss at 30 A, critical for >95% efficiency in 48 V–12 V VRMs.
I_D, cont	379 A at T_C = 25 °C - Supports single-device implementation in high-current CPU/GPU power rails up to 400 A with derating.
Q_OSS	27 nC - Low output charge reduces turn-off energy loss and improves light-load efficiency in high-frequency SMPS.
R_thJC (bottom)	1.4 °C/W - Enables direct thermal coupling to heatsink or copper plane, limiting junction rise to ≤14 °C at 10 W dissipation.
E_AS	859 mJ - Withstands single-pulse inductive energy in hot-swap or load-dump events without failure.
V_GS(th)	1.2–2.0 V - Logic-level gate drive compatible with 3.3 V/5 V controllers; ensures reliable turn-on below 4.5 V supply.

Pinout & Package

Package: PG-WHTFN-9 - 9-terminal thermally enhanced exposed-pad package with bottom-side thermal interface and top-side source terminals for dual-side cooling.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source (S)	Four parallel source connections reduce loop inductance and improve current sharing in high-di/dt applications.
5–8	Drain (D)	Four paralleled drain terminals minimize conduction loss and support symmetric current routing into PCB copper.
9	Gate (G)	Single gate input with 0.4 Ω internal gate resistance-enables stable switching without external gate resistor in most layouts.

Key Features

Feature	Design Value
N-channel logic-level operation	Guaranteed turn-on with 4.5 V gate drive, eliminating need for level-shifters in 5 V control systems.
100% avalanche tested	Each unit validated to withstand 859 mJ single-pulse avalanche energy-ensures field reliability under transient overvoltage.
Optimized for synchronous rectification	Low Q_GD/Q_G ratio (5.7/29 nC) and fast tr/tf (2/4 ns) minimize shoot-through risk and dead-time loss.
Pb-free, halogen-free, RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 reflow standards-qualified for industrial temperature cycling and long-term solder joint integrity.

Applications

Server Voltage Regulator Modules (VRMs)

AI Accelerator Power Delivery

Use Scenario: High-current, multi-phase buck converters supplying 0.8–1.2 V to CPUs and GPUs in datacenter servers.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch in high-side or low-side position, operating at 300–1000 kHz.

Use Value: 0.45 mΩ R_DS(on) cuts conduction loss by >40% vs. legacy 0.8 mΩ devices, directly improving full-load efficiency and reducing heatsink size.

Use Scenario: Point-of-load (POL) regulators powering ASICs and TPUs in AI training clusters requiring >500 A per rail.

IC Role / Device Role / Timing Role: Low-side switch in interleaved multiphase topologies with tight thermal constraints and fast transient response demands.

Use Value: Dual-side thermal resistance (1.4/0.7 °C/W) enables uniform junction temperature distribution across 9-pin layout, preventing localized hot spots during burst-mode operation.

Industrial Motor Drive Inverters

High-Efficiency Telecom Rectifiers

Use Scenario: 24–48 V BLDC motor drives for robotics and automated guided vehicles (AGVs) with space-constrained PCBs.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 100–300 A peak currents with PWM frequencies up to 50 kHz.

Use Value: 87 A continuous diode current and 31 ns t_rr allow body diode commutation without external freewheeling diodes, simplifying BOM and layout.

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers delivering >1 kW output with >97% efficiency targets.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes in LLC resonant converters operating at 200–500 kHz.

Use Value: 27 nC Q_OSS and 29 nC Q_G reduce switching losses by ~35% compared to comparable 12 V MOSFETs, enabling higher frequency operation without efficiency penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	12 V rating, 0.55 mΩ R_DS(on), SO-8 package, 120 A I_D	Limited to ≤12 V systems; lower current capacity and no dual-side cooling.	Select only for cost-sensitive, lower-power (<150 A) 12 V applications where thermal headroom is ample.
SIZ250DT-T1-GE3	25 V rating, 0.32 mΩ R_DS(on), TSDSON-8 package, 320 A I_D	Higher voltage margin but larger Q_G (48 nC) and no top-side source terminals-reduced thermal flexibility.	Prefer when 25 V blocking is required or when board layout favors single-sided thermal interface with higher R_DS(on) tolerance.

Compared with IRLHS6342TRPBF and SIZ250DT-T1-GE3, IQE004NE1LM7CGSCATMA1 uniquely balances 15 V rating, sub-0.5 mΩ R_DS(on), 379 A current, and dual thermal path design-making it optimal for next-gen 48 V–12 V VRMs where efficiency, power density, and thermal headroom are co-constrained.

Availability

IQE004NE1LM7CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power delivery, industrial motor drives, and telecom rectifiers requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade qualification.

Supply support for IQE004NE1LM7CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap technologies.

This part belongs to the OptiMOSTM 7 product line-engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, AI, and industrial power systems where ultra-low R_DS(on) and advanced thermal performance are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous drain current de-rates linearly above T_C = 25 °C, with full 379 A rated only at that temperature. At T_C = 100 °C, ID drops to 240 A. The absolute maximum junction temperature is 150 °C, and thermal design must ensure R_thJC × P_tot + T_C ≤ 150 °C under worst-case load and ambient conditions.

Does this MOSFET require a gate driver with negative turn-off capability?

No. With a gate threshold voltage of 1.2–2.0 V and logic-level compatibility, standard 0/+5 V or 0/+7 V gate drivers suffice. The internal gate resistance is 0.4 Ω, and the device exhibits stable turn-off behavior without negative voltage-though adding −2 V can further reduce switching loss in ultra-high-frequency designs.

Can the body diode be used for continuous freewheeling in hard-switched topologies?

Yes. The integrated body diode supports 87 A continuous forward current at T_C = 25 °C and has characterized reverse recovery parameters (t_rr = 31–62 ns, Q_rr = 24–98 nC), enabling reliable use in non-resonant hard-switched converters without external diodes-provided thermal limits and di/dt stress are within spec.

Is PG-WHTFN-9 compatible with standard reflow profiles for lead-free assembly?

Yes. The package is qualified per JEDEC J-STD-020, supporting peak reflow temperatures up to 260 °C for ≤30 seconds. Its exposed copper thermal pad requires controlled solder paste volume and stencil design to ensure void-free thermal interface-recommended land pattern matches Infineon's PG-WHTFN-9 outline drawing (Doc. No. PG-WHTFN-9-1).

IQE004NE1LM7CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 15 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Ta), 379A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 0.45mOhm @ 30A, 7V

Vgs(th) (Max) @ Id:: 2V @ 432µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 7 V

Vgs (Max):: ±7V

Input Capacitance (Ciss) (Max) @ Vds:: 6240 pF @ 7.5 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9

IQE004NE1LM7CGSCATMA1 FAQ

1.How can I place an order for IQE004NE1LM7CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE004NE1LM7CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE004NE1LM7CGSCATMA1 reliable?

The price and inventory of IQE004NE1LM7CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE004NE1LM7CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE004NE1LM7CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE004NE1LM7CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE004NE1LM7CGSCATMA1?

IQE004NE1LM7CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE004NE1LM7CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE004NE1LM7CGSCATMA1?

For technical support, including IQE004NE1LM7CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE004NE1LM7CGSCATMA1 requirements.

6.How does Aetrix verify that IQE004NE1LM7CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE004NE1LM7CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE004NE1LM7CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE004NE1LM7CGSCATMA1?

All IQE004NE1LM7CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE004NE1LM7CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE004NE1LM7CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQE004NE1LM7CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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