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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE004NE1LM7SCATMA1

Name: IQE004NE1LM7SCATMA1
Brand: Infineon Technologies
SKU: IQE004NE1LM7SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE004NE1LM7SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQE004NE1LM7SCATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQE004NE1LM7SCATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET optimized for synchronous rectification in high-efficiency SMPS, featuring 15 V V_DS, 0.45 mΩ max R_DS(on) at V_GS = 7 V, 379 A continuous drain current (T_C = 25 °C), and PG-WHSON-8 package with exposed drain pad for thermal performance.

For engineers reviewing the IQE004NE1LM7SCATMA1 datasheet, IQE004NE1LM7SCATMA1 pinout, IQE004NE1LM7SCATMA1 application, or IQE004NE1LM7SCATMA1 equivalent, this device is selected for high-current, low-voltage DC-DC conversion stages where ultra-low conduction loss and fast switching (t_d(off) = 21 ns, Q_oss = 27 nC) are critical to efficiency and thermal management.

Technical Context

This OptiMOSTM 7 device uses trench-gate superjunction technology to achieve sub-0.5 mΩ on-resistance at 15 V rating while maintaining robust avalanche capability (E_AS = 859 mJ). Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) ensures reliable turn-on with standard logic-level drivers.

The PG-WHSON-8 package integrates a thermally enhanced bottom-side cooling path (R_thJC = 1.4 °C/W to case bottom) and top-side thermal resistance of 0.7 °C/W, enabling high-power density designs without external heatsinks in constrained layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	15 V - Maximum blocking voltage for low-voltage synchronous buck converters and OR-ing applications.
R_DS(on), max	0.45 mΩ at V_GS = 7 V - Enables <1 W conduction loss at 30 A, critical for >95% efficiency in 3.3–12 V output rails.
I_D, cont	379 A at T_C = 25 °C - Supports high-current single-phase VRMs and multiphase CPU/GPU power stages.
Q_oss	27 nC - Low output charge reduces switching loss during hard-switched transitions in high-frequency (>1 MHz) topologies.
E_AS	859 mJ - Fully rated avalanche energy allows robust operation under transient overvoltage and inductive load switching.
t_d(off)	21 ns - Fast turn-off supports precise dead-time control and minimizes shoot-through risk in synchronous rectifiers.
V_GS(th)	1.2–2.0 V - Ensures full enhancement with 3.3 V or 5 V gate drivers, eliminating need for level-shifting circuitry.

Pinout & Package

Package: PG-WHSON-8 (exposed drain pad, 3.3 mm × 3.3 mm, 0.55 mm height), thermally optimized for PCB bottom-side copper cooling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–3 (Source)	Source terminal (low-side reference)	Three parallel source pins reduce bond-wire inductance and improve current sharing in high-di/dt applications.
Pin 4 (Gate)	Control input	Single gate connection with low gate resistance (R_G = 0.4 Ω) enables fast, low-loss switching with minimal external gate resistor.
Pin 5–8 (Drain)	Power output / high-side return	Four-drain-pin configuration maximizes current-carrying capacity and thermal coupling to PCB copper area via exposed pad.

Key Features

Feature	Design Value
N-channel logic-level operation	Guarantees full enhancement at V_GS ≥ 4.5 V, compatible with standard microcontroller GPIO and PWM controllers.
100% avalanche tested	Each unit validated to withstand single-pulse E_AS = 859 mJ, ensuring field reliability in unclamped inductive switching events.
Superior thermal resistance	R_thJC = 1.4 °C/W (bottom) enables >80 W power dissipation with minimal temperature rise on 6 cm² PCB copper.
Optimized for synchronous rectification	Low Q_gd/Q_g ratio (5.7/29 nC) and fast t_r/t_f (2 ns / 4 ns) minimize reverse recovery losses in secondary-side FETs.

Applications

Server VRM Phase Legs

AI Accelerator Power Delivery

Use Scenario: High-current, multi-phase buck converters supplying 0.8–1.2 V to CPUs and GPUs in datacenter servers.

IC Role / Device Role: Low-side synchronous rectifier FET in interleaved phase legs.

Use Value: 0.45 mΩ R_DS(on) cuts conduction loss by >40% vs. legacy 0.8 mΩ devices, directly improving system efficiency and reducing cooling requirements.

Use Scenario: Point-of-load regulation for high-bandwidth memory interfaces (HBM3, GDDR7) requiring <1% voltage ripple.

IC Role / Device Role: Primary switch in compact, high-frequency (1–2 MHz) buck converters.

Use Value: 21 ns t_d(off) and 27 nC Q_oss enable stable operation at 1.5 MHz with minimal switching loss, supporting tight transient response.

Industrial PLC I/O Modules

Automotive ADAS Domain Controllers

Use Scenario: 24 V input-to-5 V/3.3 V conversion for isolated sensor interface and communication ICs in programmable logic controllers.

IC Role / Device Role: High-side switch in hot-swap and load-switch circuits.

Use Value: 15 V V_DS rating and 859 mJ E_AS withstand inrush currents and cable discharge events per IEC 61000-4-5.

Use Scenario: 12 V battery-fed power supply for radar and camera processing units operating in -40 °C to 125 °C ambient.

IC Role / Device Role: Synchronous rectifier in dual-phase buck converter feeding SoC core rails.

Use Value: R_DS(on) drift <1.6× from -55 °C to 150 °C (per Diagram 9) ensures consistent efficiency across automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 0.55 mΩ (max), V_DS = 20 V, Q_g = 32 nC, same PG-WHSON-8 footprint	Higher R_DS(on) increases conduction loss by ~22% at 30 A; higher V_DS margin suits 19 V input systems	Select when 20 V rating is required for wider input range, accepting modest efficiency trade-off.
SISD150DP-T1-GE3	R_DS(on) = 0.42 mΩ (typ), V_DS = 12 V, Q_g = 48 nC, PowerPAK® 1212-8 package	Lower V_DS limits use to ≤12 V systems; higher Q_g slows switching and increases driver loss	Prefer only in space-constrained 12 V-only designs where footprint compatibility outweighs gate drive penalty.

Compared with IRLHS6342TRPBF and SISD150DP-T1-GE3, IQE004NE1LM7SCATMA1 delivers the lowest R_DS(on) at 15 V rating and best Q_oss/Q_g balance-making it optimal for high-efficiency, high-frequency synchronous rectification where thermal headroom is limited.

Availability

IQE004NE1LM7SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power delivery, industrial PLC I/O modules, and automotive ADAS domain controllers requiring stable component supply and long-term production continuity.

Supply support for IQE004NE1LM7SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with leadership in silicon and wide-bandgap power devices.

This device belongs to the OptiMOSTM 7 family-engineered specifically for high-current, low-voltage DC-DC conversion in datacenter, AI, and automotive applications where ultra-low R_DS(on) and thermal performance are non-negotiable.

FAQ

What is the maximum junction temperature rating for IQE004NE1LM7SCATMA1?

The device is rated for continuous operation from T_j = –55 °C to +150 °C, with derating applied above 125 °C per Figure 2 in the datasheet. At T_C = 100 °C, continuous drain current drops to 240 A, reflecting thermal design constraints rather than electrical failure limits.

Can IQE004NE1LM7SCATMA1 be used in a high-side switch configuration?

Yes-it supports high-side switching when driven with appropriate gate bias (e.g., bootstrap or isolated gate driver), but its logic-level V_GS(th) and low R_DS(on) are optimized for low-side synchronous rectification; high-side use requires careful attention to dV/dt immunity and gate drive loop inductance.

Is the internal body diode suitable for reverse recovery in synchronous rectifier applications?

Yes-the diode has t_rr = 31–62 ns and Q_rr = 24–98 nC depending on diF/dt, and is fully characterized for synchronous rectification. Its soft recovery behavior minimizes voltage overshoot and EMI in hard-switched topologies.

Does IQE004NE1LM7SCATMA1 require a gate resistor for stability?

A small external gate resistor (1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation, especially in high-di/dt applications; the internal R_G of 0.4 Ω alone is insufficient for robust EMI control in production layouts.

IQE004NE1LM7SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 15 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Ta), 379A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 0.45mOhm @ 30A, 7V

Vgs(th) (Max) @ Id:: 2V @ 432µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 7 V

Vgs (Max):: ±7V

Input Capacitance (Ciss) (Max) @ Vds:: 6240 pF @ 7.5 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8

IQE004NE1LM7SCATMA1 FAQ

1.How can I place an order for IQE004NE1LM7SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE004NE1LM7SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE004NE1LM7SCATMA1 reliable?

The price and inventory of IQE004NE1LM7SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE004NE1LM7SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE004NE1LM7SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE004NE1LM7SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE004NE1LM7SCATMA1?

IQE004NE1LM7SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE004NE1LM7SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE004NE1LM7SCATMA1?

For technical support, including IQE004NE1LM7SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE004NE1LM7SCATMA1 requirements.

6.How does Aetrix verify that IQE004NE1LM7SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE004NE1LM7SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE004NE1LM7SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE004NE1LM7SCATMA1?

All IQE004NE1LM7SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE004NE1LM7SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE004NE1LM7SCATMA1 part is unused and in its original packaging.

Return procedure for IQE004NE1LM7SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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