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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE013N04LM6SCATMA1

Name: IQE013N04LM6SCATMA1
Brand: Infineon Technologies
SKU: IQE013N04LM6SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE013N04LM6SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQE013N04LM6SCATMA1.pdf

Description:: OPTIMOS LOWVOLTAGE POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQE013N04LM6SCATMA1 from Infineon Technologies is an N-channel logic-level OptiMOSTM 6 power MOSFET rated for 40 V drain-source voltage, 1.35 mΩ maximum R_DS(on) at V_GS = 10 V, and 205 A continuous drain current at T_C = 25 °C. It features a PG-WHSON-8 package with exposed drain pads (pins 5–8), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the IQE013N04LM6SCATMA1 datasheet, IQE013N04LM6SCATMA1 pinout, IQE013N04LM6SCATMA1 application, or IQE013N04LM6SCATMA1 equivalent, key selection criteria include low Q_G (20 nC @ 0–4.5 V), ultra-low Q_OSS (45 nC), robust avalanche rating (255 mJ), and thermal resistance R_thJC of 1.4 °C/W (bottom side) - critical for high-density power stage design.

Technical Context

This device implements a trench-based silicon MOSFET architecture with integrated body diode, designed specifically for high-frequency switching in buck, boost, and LLC secondary-side synchronous rectification. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic drivers, while the low Crss (27–47 pF) minimizes Miller-induced shoot-through risk.

The PG-WHSON-8 package enables double-sided cooling via top-side thermal pad and bottom-side drain copper area, supporting >100 A steady-state operation when mounted on 6 cm² FR4 PCB with 70 µm copper. Dynamic parameters - including t_d(on) = 7.1 ns and t_f = 4.9 ns - are characterized under standardized 20 V V_DD, 20 A ID, and 1.6 Ω external gate resistor conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V/48 V bus applications with safety margin
R_DS(on), max	1.35 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 20 A, reducing heatsink requirements
I_D, cont	205 A @ T_C = 25 °C - Supports high-current single-phase power stages without paralleling
Q_OSS	45 nC - Low output charge improves light-load efficiency in hard-switched converters
Q_G (0–4.5 V)	20 nC - Enables fast, low-loss switching with standard gate drivers (e.g., UCC2753x)
R_thJC (bottom)	1.4 °C/W - Allows direct thermal coupling to heatsink or PCB copper, enabling compact thermal design
E_AS	255 mJ - Rated single-pulse avalanche energy supports inductive load transients without failure

Pinout & Package

PG-WHSON-8 package: 2.1 mm × 2.1 mm footprint, 0.55 mm height, thermally enhanced with exposed drain paddle on bottom (pins 5–8). Top-side thermal pad optional for auxiliary cooling.

Pin/Terminal	Circuit Role	Design Meaning
1–3 (Source)	Source connection	Low-inductance parallel source terminals reduce common-source inductance in high-dI/dt operation
4 (Gate)	Control input	Single gate terminal with low gate resistance (0.9 Ω) minimizes ringing and driver loss
5–8 (Drain)	Power output / heat path	Four-pin drain configuration maximizes current handling and provides primary thermal conduction path to PCB

Key Features

Feature	Design Value
Optimized for synchronous rectification	Ultra-low Q_G/Q_OSS ratio (0.44) and fast reverse recovery (t_rr = 25–50 ns) minimize body diode conduction loss
Logic-level gate drive	V_GS(th) = 1.2–2.0 V ensures full enhancement with 3.3 V microcontroller GPIO or dedicated sync-FET drivers
100% avalanche tested	Each unit validated to withstand 255 mJ single-pulse avalanche energy - no derating needed for inductive switching stress
Superior thermal resistance	R_thJC = 1.4 °C/W (bottom) enables >100 W power dissipation with minimal ΔT between junction and heatsink

Applications

Server VRM Power Stage

Industrial 48 V DC/DC Converter

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage (0.8–1.2 V @ up to 300 A).

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, operating at 300–600 kHz with precise gate timing control.

Use Value: 1.35 mΩ R_DS(on) and 20 nC Q_G reduce total power loss by ≥12% vs. legacy 2.2 mΩ devices at 200 A, improving VRM efficiency to >95%.

Use Scenario: Isolated half-bridge LLC resonant converter for factory automation PLC power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped configuration, commutated at zero-voltage switching points.

Use Value: 45 nC Q_OSS and 25–50 ns t_rr suppress reverse recovery spikes, eliminating need for snubbers and reducing EMI filter size by 30%.

Automotive ADAS Domain Controller

Telecom 48 V Intermediate Bus Converter

Use Scenario: Compact 48 V-to-12 V bidirectional buck-boost converter powering radar and camera modules.

IC Role / Device Role / Timing Role: Bidirectional power switch in dual active bridge topology, requiring low R_DS(on) and symmetric conduction capability.

Use Value: 1.35 mΩ on-resistance and 96 A diode forward current (I_S) support 150 W bidirectional transfer with <15 mW conduction loss per direction at 12.5 A.

Use Scenario: High-density 48 V input, 12 V output non-isolated buck converter for 5G base station RF power amplifiers.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 1 MHz with tight duty cycle control.

Use Value: 7.1 ns t_d(on) and 4.9 ns t_f enable stable 1 MHz operation with <5% dead-time overhead, increasing power density by 22% vs. 500 kHz designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 1.45 mΩ @ 4.5 V; Q_G = 22 nC; PG-TSDSON-8 package	Higher gate charge increases driver loss; slightly larger R_thJA (65 °C/W)	Acceptable where board space allows larger thermal pad; less optimal for >500 kHz switching
SISD13DN04LC-GE3	R_DS(on) = 1.25 mΩ @ 10 V; Q_OSS = 58 nC; TO-252-2 package	Larger footprint (6.7 × 6.2 mm); higher Q_OSS degrades light-load efficiency	Better for cost-sensitive industrial designs with relaxed size constraints; not suitable for VRM-level density

Compared with IRLHS6342TRPBF and SISD13DN04LC-GE3, IQE013N04LM6SCATMA1 delivers superior high-frequency efficiency due to its lower Q_OSS/Q_G ratio and optimized WHSON thermal path - making it the preferred choice for space-constrained, high-switching-frequency power stages.

Availability

IQE013N04LM6SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC/DC converters, automotive ADAS domain controllers, and telecom intermediate bus converters requiring stable component supply and long-term production continuity.

Supply support for IQE013N04LM6SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 6 family - engineered for high-efficiency, high-current synchronous rectification in next-generation DC/DC power conversion, targeting datacenter, industrial, and automotive electrification applications.

FAQ

What is the maximum recommended gate drive voltage for IQE013N04LM6SCATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is fully enhanced at V_GS = 4.5 V and optimized for 10 V drive. Operating above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and Q_G-related losses - 10 V is the recommended nominal drive level per datasheet characterization.

Does IQE013N04LM6SCATMA1 require a gate resistor for stability?

Yes - a 1.6 Ω external gate resistor is used in all datasheet switching time measurements to dampen ringing and limit peak gate current. For 300–600 kHz VRM applications, a 1–2.2 Ω non-inductive resistor is recommended; values below 1 Ω increase risk of gate oscillation and overshoot, especially with high-speed drivers.

Can IQE013N04LM6SCATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing. Layout must maintain matched gate and source loop inductances; use Kelvin source connections and individual gate resistors. Derate total current by 15% for 2-device parallel operation to account for thermal coupling.

Is the internal body diode suitable for reverse recovery in hard-switched topologies?

Yes - the diode is fully characterized with t_rr = 25–50 ns and Q_rr = 62–124 nC at 20 V reverse bias and 100 A/µs diF/dt. It supports hard-switched operation up to 300 kHz, but for >400 kHz, zero-voltage switching or active clamp techniques are advised to minimize recovery loss.

IQE013N04LM6SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 205A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.35mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 51µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-1

IQE013N04LM6SCATMA1 FAQ

1.How can I place an order for IQE013N04LM6SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE013N04LM6SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE013N04LM6SCATMA1 reliable?

The price and inventory of IQE013N04LM6SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE013N04LM6SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE013N04LM6SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE013N04LM6SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE013N04LM6SCATMA1?

IQE013N04LM6SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE013N04LM6SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE013N04LM6SCATMA1?

For technical support, including IQE013N04LM6SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE013N04LM6SCATMA1 requirements.

6.How does Aetrix verify that IQE013N04LM6SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE013N04LM6SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE013N04LM6SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE013N04LM6SCATMA1?

All IQE013N04LM6SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE013N04LM6SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE013N04LM6SCATMA1 part is unused and in its original packaging.

Return procedure for IQE013N04LM6SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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