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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE022N06LM5ATMA1

Name: IQE022N06LM5ATMA1
Brand: Infineon Technologies
SKU: IQE022N06LM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE022N06LM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IQE022N06LM5ATMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Inventory:4,927

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Product details

Overview

IQE022N06LM5ATMA1 from Infineon Technologies is a 60 V, logic-level N-channel Trench MOSFET in PG-TSON-8 package, optimized for synchronous rectification in high-efficiency SMPS. It delivers R_DS(on) = 2.2 mΩ @ 10 V and 2.9 mΩ @ 4.5 V, supports 151 A continuous drain current at T_C = 25 °C, and features 100% avalanche-tested ruggedness for industrial power conversion.

For engineers reviewing the IQE022N06LM5ATMA1 datasheet, IQE022N06LM5ATMA1 pinout, IQE022N06LM5ATMA1 application, or IQE022N06LM5ATMA1 equivalent, key selection criteria include low gate charge (Q_G = 26 nC @ 4.5 V), superior thermal resistance (R_thJC = 0.9 °C/W), and robust reverse diode performance (V_SD = 0.79 V @ 20 A) in compact surface-mount form.

Technical Context

This OptiMOSTM 5 device uses advanced Trench stop-gate technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_d(on) = 6.1 ns, t_d(off) = 26 ns) and low gate charge (Q_gd = 8–12 nC). Its logic-level gate threshold (V_GS(th) = 1.1–2.3 V) enables direct drive from 3.3 V/5 V controllers without level-shifting.

The integrated body diode exhibits low forward voltage (V_SD = 0.79 V typ. @ 20 A, 25 °C) and controlled reverse recovery (Q_rr = 19–196 nC depending on di/dt), supporting ZVS and soft-switching topologies in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input DC-DC and PoE++ systems
R_DS(on) max @ 10 V	2.2 mΩ - Enables <1 W conduction loss at 20 A in high-current output rails
R_DS(on) max @ 4.5 V	2.9 mΩ - Ensures reliable turn-on with standard logic-level drivers
I_D continuous	151 A @ T_C = 25 °C - Supports >1 kW power stages with minimal paralleling
Q_oss	45 nC - Low output charge reduces switching loss in hard-switched applications
R_thJC	0.9 °C/W - Enables high-power density thermal design with minimal heatsinking
Q_G @ 4.5 V	26 nC - Reduces gate driver power requirement and improves efficiency at 500 kHz+

Pinout & Package

Package: PG-TSON-8 (3.3 mm × 3.3 mm × 0.85 mm, exposed drain pad), RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1–3, Source	Source terminal (low-side reference)	Three parallel pins reduce source inductance and improve current sharing in high-di/dt operation
4, Gate	Control input	Single gate pin with low gate resistance (R_G = 1.1–1.4 Ω) minimizes ringing and EMI
5–8, Drain	Power output / heat sink interface	Four-pin drain connection maximizes thermal transfer to PCB copper and reduces junction-to-case resistance

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.1–2.3 V enables direct interfacing with 3.3 V microcontrollers and PWM ICs
100% avalanche rated	E_AS = 241 mJ supports unclamped inductive switching without failure in flyback or boost converters
Optimized for synchronous rectification	Low Q_gd/Q_g ratio (≈0.46) and fast t_r/t_f (4.1/5.9 ns) minimize dead-time losses
Superior thermal performance	R_thJC = 0.9 °C/W allows >90 W dissipation before reaching 150 °C junction temperature

Applications

Server VRM

Industrial SMPS

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 300 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, operating at 500–1000 kHz with tight duty cycle control.

Use Value: 2.2 mΩ R_DS(on) limits conduction loss to <1.3 W per phase at 60 A, enabling >95% efficiency at full load.

Use Scenario: 1 kW isolated DC-DC converter for PLC power supplies using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with ZVS capability enabled by low Q_oss (45 nC) and fast diode recovery.

Use Value: Body diode V_SD = 0.79 V and Q_rr = 19 nC @ 100 A/µs reduce reverse recovery loss by >40% vs. standard MOSFETs.

Telecom PoE++ PSE

EV Onboard Charger

Use Scenario: 90 W PoE++ (IEEE 802.3bt Type 4) power sourcing equipment with active current limiting and fault protection.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or half-bridge topology, handling 57 V input with 100% duty cycle margin.

Use Value: 60 V V_DS rating provides 15 V headroom above 42 V PoE++ maximum, ensuring safe operation during transients.

Use Scenario: Bidirectional AC/DC stage in 11 kW OBC, where same MOSFET serves as rectifier and inverter switch.

IC Role / Device Role / Timing Role: Half-bridge leg switch in interleaved totem-pole PFC and dual-active-bridge DC-DC stages.

Use Value: Avalanche ruggedness (E_AS = 241 mJ) withstands line surges and inductive kickback during grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB027N06N3 G	R_DS(on) = 2.7 mΩ @ 10 V; higher Q_G = 35 nC; same PG-TSON-8 package	Slightly lower efficiency at high frequency due to higher gate charge and slower switching	Preferred when cost sensitivity outweighs 0.5% efficiency gain and thermal margin is ample
STL220N6F7	R_DS(on) = 2.2 mΩ @ 10 V but only rated to 40 V; different PowerFLAT 5x6 package	Not suitable for 48 V bus systems requiring 60 V rating; requires PCB redesign	Select only for 24 V or ≤40 V applications where footprint flexibility permits package change

Compared with IPB027N06N3 G and STL220N6F7, IQE022N06LM5ATMA1 offers the best balance of ultra-low R_DS(on), low Q_G, 60 V rating, and industry-qualified thermal performance-making it optimal for high-density, high-reliability 48 V industrial and telecom power stages.

Availability

IQE022N06LM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, telecom PoE++ PSEs, and EV onboard chargers requiring stable component supply across long production lifecycles.

Supply support for IQE022N06LM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and telecom infrastructure where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IQE022N06LM5ATMA1 has a maximum junction temperature (T_j) of 175 °C, validated per JEDEC JESD22-A108 for industrial applications. Derating is required above T_C = 100 °C per Figure 2 in the datasheet; at T_C = 125 °C, I_D must be reduced to 93 A to maintain safe thermal operation.

Does this MOSFET require a gate resistor for stability in high-frequency switching?

Yes-a gate resistor (typically 1.6 Ω external, as used in datasheet switching tests) is recommended to dampen ringing caused by parasitic inductance and prevent unintended turn-on. The internal gate resistance is 1.1–1.4 Ω, so total R_G should be ≥2.5 Ω for reliable 500+ kHz operation with standard gate drivers.

Can the body diode be used for freewheeling in non-synchronous designs?

Yes-the integrated body diode is fully characterized with V_SD = 0.79 V @ 20 A (25 °C) and t_rr = 26–34 ns. However, its Q_rr varies significantly with di/dt (19 nC at 100 A/µs vs. 196 nC at 1000 A/µs), so freewheeling efficiency depends heavily on circuit layout and current slew rate.

Is the PG-TSON-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-the IQE022N06LM5ATMA1 uses Pb-free lead plating and is qualified for standard IPC/JEDEC J-STD-020D reflow profiles. Peak temperature must not exceed 260 °C for ≤30 seconds, and the exposed drain pad requires full solder coverage to achieve specified R_thJC and current rating.

IQE022N06LM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 151A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 48µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4420 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-5

IQE022N06LM5ATMA1 FAQ

1.How can I place an order for IQE022N06LM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE022N06LM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE022N06LM5ATMA1 reliable?

The price and inventory of IQE022N06LM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE022N06LM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IQE022N06LM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE022N06LM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE022N06LM5ATMA1?

IQE022N06LM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE022N06LM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE022N06LM5ATMA1?

For technical support, including IQE022N06LM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE022N06LM5ATMA1 requirements.

6.How does Aetrix verify that IQE022N06LM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE022N06LM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE022N06LM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IQE022N06LM5ATMA1?

All IQE022N06LM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE022N06LM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE022N06LM5ATMA1 part is unused and in its original packaging.

Return procedure for IQE022N06LM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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