Infineon Technologies IQE022N06LM5CGATMA1

Overview

IQE022N06LM5CGATMA1 from Infineon Technologies is a 60 V, logic-level N-channel Trench MOSFET in PG-TTFN-9 package, optimized for synchronous rectification in high-efficiency SMPS. It delivers R_DS(on) = 2.2 mΩ @ 10 V and 2.9 mΩ @ 4.5 V, supports 151 A continuous drain current at T_C = 25 °C, and features 100% avalanche-tested ruggedness for industrial power conversion.

For engineers reviewing the IQE022N06LM5CGATMA1 datasheet, IQE022N06LM5CGATMA1 pinout, IQE022N06LM5CGATMA1 application, or IQE022N06LM5CGATMA1 equivalent, key selection criteria include low gate charge (Q_G = 26 nC @ 4.5 V), ultra-low R_DS(on), superior thermal resistance (R_thJC = 0.9 °C/W), and integrated Schottky-like body diode performance with Q_rr = 19–196 nC depending on di/dt.

Technical Context

This OptiMOSTM 5 device uses advanced TrenchStop process technology to achieve simultaneous low conduction loss and fast switching. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) enables direct drive from 3.3 V/5 V logic controllers, while the 9-pin PG-TTFN-9 package integrates four parallel source terminals and four parallel drain terminals to minimize parasitic inductance and improve current sharing.

The MOSFET exhibits tightly controlled dynamic parameters: C_iss = 3400–4420 pF, C_oss = 720–936 pF, and Crss = 35–63 pF at V_DS = 30 V. Its reverse recovery behavior is characterized across two di/dt conditions (100 A/µs and 1000 A/µs), supporting design of hard-switched and resonant topologies requiring predictable body diode commutation.

Key Specifications

Pinout & Package

PG-TTFN-9 is a thermally enhanced 9-pin thin-profile flat no-lead package with exposed drain paddle. Four drain pins (5–8) are internally connected to the die's drain metallization; one gate pin (9) provides low-inductance gate control; four source pins (1–4) connect to the source terminal and serve as primary thermal and electrical return paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with STL220N6F7AG and IXFN220N60X3, IQE022N06LM5CGATMA1 offers the lowest R_DS(on) and Q_G in its class, combined with industry-leading thermal resistance and avalanche ruggedness-making it optimal for high-density, high-efficiency 60 V synchronous rectification where thermal management and switching loss are critical.

Availability

IQE022N06LM5CGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IQE022N06LM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IQE022N06LM5CGATMA1 belongs to the OptiMOSTM 5 family-engineered specifically for high-efficiency, high-current switching in industrial and computing power supplies, emphasizing low R_DS(on), fast switching, and ruggedness in compact surface-mount packages.

FAQ

What is the maximum continuous drain current for IQE022N06LM5CGATMA1 at 100 °C case temperature?

The maximum continuous drain current is 107 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the Rev. 2.0 datasheet. At V_GS = 4.5 V, the rating drops to 93 A under the same thermal condition due to increased R_DS(on) at lower gate voltage.

Does IQE022N06LM5CGATMA1 support Kelvin source connection for accurate gate drive?

Yes-the PG-TTFN-9 package provides four dedicated source pins (1–4) electrically isolated from the gate and drain terminals, enabling true Kelvin source sensing. This allows precise gate-to-source voltage control and eliminates common-source inductance effects during high-di/dt switching.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the body diode is characterized for reverse recovery with trr = 17–52 ns and Qrr = 9–196 nC depending on di/dt (100–1000 A/µs). Its low V_SD (0.79 V typ.) and controlled Qrr enable reliable operation in hard-switched forward and active-clamp flyback converters without external Schottky assist.

Can IQE022N06LM5CGATMA1 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) (verified in Diagram 9) ensures inherent current sharing when multiple units are paralleled. The symmetric 4-drain/4-source pin layout and low package inductance further support stable parallel operation in high-current (>300 A) applications such as AI accelerator power delivery.