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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE022N06LM5CGSCATMA1

Name: IQE022N06LM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQE022N06LM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE022N06LM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQE022N06LM5CGSCATMA1.pdf

Description:: OPTIMOS 5 POWER-TRANSISTOR 60V

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Product details

Overview

IQE022N06LM5CGSCATMA1 from Infineon Technologies is a 60 V, logic-level N-channel OptiMOSTM 5 power MOSFET in PG-WHTFN-9 package, optimized for synchronous rectification in high-efficiency SMPS. It delivers R_DS(on) = 2.2 mΩ @ 10 V, 151 A continuous drain current at T_C = 25 °C, and 100% avalanche tested performance for industrial-grade reliability in DC-DC converters.

For engineers reviewing the IQE022N06LM5CGSCATMA1 datasheet, IQE022N06LM5CGSCATMA1 pinout, IQE022N06LM5CGSCATMA1 application, or IQE022N06LM5CGSCATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V (2.9 mΩ), Q_g = 26 nC (0–4.5 V), Q_oss = 45 nC, thermal resistance R_thJC = 0.9 °C/W (bottom), and integrated body diode with t_rr = 26 ns (100 A/µs).

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized charge balance for minimal conduction and switching losses. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) enables direct drive from 3.3 V and 5 V controllers, while the 9-pin thermally enhanced WHTFN package provides dual-side cooling via top and bottom thermal pads.

The internal body diode is characterized for fast recovery (Q_rr = 19–196 nC depending on di/dt) and low forward voltage (V_SD = 0.79 V @ 20 A), supporting high-frequency synchronous rectification without external Schottky replacement in 60 V-class isolated DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V input bus systems and 60 V safety margin for transient clamping.
R_DS(on) max @ 10 V	2.2 mΩ - Enables <1.5 W conduction loss at 151 A, critical for high-current secondary-side rectification.
R_DS(on) max @ 4.5 V	2.9 mΩ - Ensures robust turn-on under logic-level gate drive, reducing driver complexity in compact adapters.
Q_g (0–4.5 V)	26 nC - Low gate charge supports >1 MHz switching with moderate gate driver strength (e.g., 2 A peak).
Q_oss	45 nC - Minimizes capacitive turn-off energy loss in hard-switched and resonant topologies.
R_thJC (bottom)	0.9 °C/W - Enables high-power dissipation (>100 W) with direct PCB copper thermal path to heatsink.
t_rr (di/dt = 100 A/µs)	26 ns - Reduces reverse recovery ringing and EMI in synchronous buck and LLC secondaries.

Pinout & Package

Package: PG-WHTFN-9 - Thermally enhanced wettable flank QFN with exposed drain pad (pins 5–8), gate pad (pin 9), and source terminals (pins 1–4). Dual thermal interfaces (top and bottom) support high-power density mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–4	Source	Low-inductance parallel source connection; tied internally to substrate for minimized loop inductance in high-di/dt paths.
Pins 5–8	Drain	Exposed drain paddle (pins 5–8) forms primary thermal and current path; requires full-solder coverage for R_thJC spec compliance.
Pin 9	Gate	Single-point gate terminal; designed for low-impedance gate loop routing to minimize oscillation during fast switching.

Key Features

Feature	Design Value
Optimized for SMPS synchronous rectification	Enables >96% efficiency in 48 V–12 V LLC and phase-shifted full-bridge converters at 300 kHz–1 MHz.
Logic-level gate drive (V_GS(th) ≤ 2.3 V)	Eliminates need for level-shifting or gate boost circuits when driven by standard PWM controllers (e.g., UCC28950, MP6908).
100% avalanche rated (E_AS = 241 mJ)	Guarantees ruggedness against inductive switching transients in unregulated or fault conditions without derating.
Halogen-free & RoHS-compliant plating	Meets IPC-J-STD-609A Class 1 halogen limits (<900 ppm Cl + Br) and EU RoHS Directive 2011/65/EU.
Superior thermal resistance (R_thJC = 0.9 °C/W)	Reduces junction temperature rise by ~30% vs. comparable SO-8 devices, extending lifetime in sealed industrial enclosures.

Applications

Server VRM Output Stage

Industrial 48 V DC-DC Converter

Use Scenario: High-current, low-voltage point-of-load regulation in AI accelerator servers requiring >400 A per rail.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 500–800 kHz with interleaved gate drive.

Use Value: 2.2 mΩ R_DS(on) reduces conduction loss by 35% vs. 3.5 mΩ alternatives, lowering thermal load on 6-layer PCB with 2 oz copper.

Use Scenario: Isolated 48 V-to-12 V DC-DC module for PLC I/O modules with strict EMI and thermal constraints.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology, driven by transformer-coupled gate signal.

Use Value: 26 ns t_rr minimizes reverse recovery spikes, enabling clean 150 kHz operation without snubbers and meeting CISPR-32 Class B limits.

Telecom Rectifier Module

EV Onboard Charger Auxiliary Supply

Use Scenario: 48 V telecom rectifier with hot-swap capability and 98% peak efficiency target.

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck-boost PFC pre-regulator, switching at 200 kHz.

Use Value: Q_g = 26 nC allows use of low-cost 1.5 A gate drivers (e.g., IRS2007), cutting BOM cost vs. 40+ nC competitors.

Use Scenario: 400 V-to-12 V auxiliary supply in bidirectional OBC, operating across -40 °C to +125 °C ambient.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck controller for 12 V system rail, driven directly from MCU GPIO.

Use Value: V_GS(th) = 1.7 V typ ensures reliable turn-on at 3.3 V logic with 100% duty cycle capability over full temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB022N06L3	R_DS(on) = 2.2 mΩ @ 10 V but Q_g = 35 nC (0–4.5 V); PG-HSOF-8 package with single-side thermal interface.	Limited to lower-frequency SMPS (<300 kHz) due to higher gate charge and inferior thermal resistance (R_thJC = 1.4 °C/W).	Select when board space is constrained and thermal budget allows >15 °C higher T_j rise.
STL220N6LF8	R_DS(on) = 2.4 mΩ @ 10 V; Q_g = 24 nC; PowerFLAT 5x6 package with no wettable flanks.	Not qualified for industrial temperature range (T_j max = 150 °C only); lacks 100% avalanche test certification.	Acceptable for commercial-grade consumer adapters where JEDEC industrial qualification is not required.

Compared with IPB022N06L3 and STL220N6LF8, IQE022N06LM5CGSCATMA1 offers superior thermal performance (0.9 °C/W vs. ≥1.4 °C/W), guaranteed avalanche ruggedness, and wettable flank solder joint inspection-critical for automotive-adjacent industrial power modules.

Availability

IQE022N06LM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, telecom rectifiers, and EV onboard charger auxiliary supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IQE022N06LM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOSTM 5 product line, engineered specifically for high-frequency, high-efficiency power conversion in datacenter, industrial, and telecom infrastructure-emphasizing low R_DS(on), fast switching, and rugged thermal design.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQE022N06LM5CGSCATMA1 supports 107 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the Rev. 2.0 datasheet. This rating assumes proper PCB copper area (6 cm²) and vertical mounting in still air. Derating curves in Diagram 2 confirm linear reduction from 151 A at 25 °C to 93 A at 125 °C for V_GS = 4.5 V operation.

Does this MOSFET require a gate resistor for stability in 500 kHz operation?

Yes-a 1.6 Ω external gate resistor is used in the datasheet's switching time test condition (Table 5), yielding t_r = 4.1 ns and t_f = 5.9 ns. For 500 kHz hard-switching, a 2.2–4.7 Ω resistor is recommended to dampen gate ringing caused by L_g–C_iss resonance, especially with >10 cm gate trace length. Layout must minimize loop inductance using Kelvin source routing.

Can the internal body diode replace an external Schottky in a 60 V synchronous rectifier?

Yes-the integrated body diode has V_SD = 0.79 V @ 20 A and t_rr = 26 ns (100 A/µs), making it suitable for synchronous rectification in 60 V-class topologies up to 300 kHz. However, for >500 kHz or ultra-low V_f requirements (<0.5 V), a discrete 60 V Schottky remains preferable due to lower forward drop and zero Q_rr.

Is PG-WHTFN-9 compatible with standard QFN reflow profiles?

Yes-PG-WHTFN-9 uses standard SnAgCu (SAC305) solder paste and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 (MSL3). Peak reflow temperature is 260 °C for ≤30 seconds. The wettable flank design enables automated optical inspection (AOI) of solder fillets, eliminating X-ray requirement for process validation.

IQE022N06LM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 151A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 48µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4420 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9

IQE022N06LM5CGSCATMA1 FAQ

1.How can I place an order for IQE022N06LM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE022N06LM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE022N06LM5CGSCATMA1 reliable?

The price and inventory of IQE022N06LM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE022N06LM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE022N06LM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE022N06LM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE022N06LM5CGSCATMA1?

IQE022N06LM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE022N06LM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE022N06LM5CGSCATMA1?

For technical support, including IQE022N06LM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE022N06LM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQE022N06LM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE022N06LM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE022N06LM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE022N06LM5CGSCATMA1?

All IQE022N06LM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE022N06LM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE022N06LM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQE022N06LM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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