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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE030N06NM5CGSCATMA1

Name: IQE030N06NM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQE030N06NM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE030N06NM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQE030N06NM5CGSCATMA1.pdf

Description:: OPTIMOS LOWVOLTAGE POWER MOSFET

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Product details

Overview

IQE030N06NM5CGSCATMA1 from Infineon Technologies is a 60 V, 3.0 mΩ N-channel OptiMOSTM 5 power MOSFET in PG-WHTFN-9 package, optimized for synchronous rectification in high-efficiency DC-DC converters. It delivers 132 A continuous drain current at TC = 25 °C, features 100% avalanche testing, and integrates an internal body diode with 31 ns reverse recovery time.

For engineers reviewing the IQE030N06NM5CGSCATMA1 datasheet, IQE030N06NM5CGSCATMA1 pinout, IQE030N06NM5CGSCATMA1 application, or IQE030N06NM5CGSCATMA1 equivalent, key selection criteria include RDS(on) ≤ 3.0 mΩ at VGS = 10 V, Qg = 39 nC, thermal resistance RthJC = 1.5 °C/W (case), and PG-WHTFN-9 footprint compatibility with high-current PCB layouts.

Technical Context

This device implements a trench-gate, superjunction-enhanced N-channel MOSFET architecture with optimized charge balance for low conduction and switching losses. Its gate threshold voltage (2.1–3.3 V) enables robust turn-on with standard 5 V or 10 V gate drivers, while the 0.7 °C/W top-side thermal resistance supports dual-sided cooling in compact power modules.

The integrated body diode exhibits controlled reverse recovery (Qrr = 26–52 nC, trr = 31–62 ns), making it suitable for hard-switched and resonant synchronous rectifier topologies. Gate charge profile shows low Qgd (6.8–10.2 nC) and plateau voltage of 4.2 V, supporting fast, low-loss transitions under high dV/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V input bus and 12 V output systems with margin.
R_DS(on), max	3.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 132 A, critical for >98% efficiency in server VRMs.
I_D, cont.	132 A @ T_C = 25 °C - Supports high-current single-phase buck stages without paralleling.
Q_g	39 nC - Low gate drive energy reduces driver IC stress and EMI during 1–2 MHz switching.
Q_oss	42 nC - Minimizes turn-off loss in high-frequency ZVS/ZCS circuits with capacitive output filtering.
R_thJC	1.5 °C/W (case) / 0.7 °C/W (top) - Enables thermal path design using both PCB copper and heatsink contact on exposed drain pad.
E_AS	153 mJ - Withstands single-pulse inductive energy in hot-swap and load-dump events without failure.

Pinout & Package

Package: PG-WHTFN-9 - 9-pin wettable flank QFN with exposed drain paddle (pins 5–8), gate pad (pin 9), and source terminals (pins 1–4). Optimized for automated optical inspection (AOI) and high-current solder joint reliability.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–4	Source	Low-impedance return path for high-current source loop; electrically tied to internal substrate and thermal paddle.
Pins 5–8	Drain	Primary high-current power path; connected to large exposed copper paddle for thermal and electrical conduction.
Pin 9	Gate	Control terminal with low gate resistance (0.9 Ω); requires <10 ns rise/fall time driver for optimal switching.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_rr (26–52 nC) and fast trr (31–62 ns) reduce body diode conduction loss and ringing in LLC and phase-shifted full-bridge converters.
Superior thermal resistance	R_thJC = 0.7 °C/W (top) enables direct heatsink mounting on package top surface, doubling thermal capacity vs. standard QFN.
100% avalanche tested	Guarantees ruggedness against inductive switching transients up to 153 mJ, eliminating need for external snubbers in industrial SMPS.
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliance ensure suitability for automotive and medical end-equipment with strict material restrictions.
Normal-level gate drive	V_GS(th) = 2.1–3.3 V allows direct interface with 3.3 V or 5 V logic controllers without level-shifting circuitry.

Applications

Server Voltage Regulator Modules

Industrial 48 V DC-DC Converters

Use Scenario: High-density 48 V-to-12 V/5 V/3.3 V conversion in AI accelerator racks requiring >97% peak efficiency at 300 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, operating at 800 kHz–1.2 MHz with zero-voltage switching.

Use Value: 3.0 mΩ R_DS(on) and 39 nC Q_g minimize combined conduction and switching loss, enabling 20% higher power density than prior-gen 4.5 mΩ devices.

Use Scenario: Isolated 48 V input to 24 V/12 V output in programmable logic controller (PLC) power supplies with wide ambient temperature range (−40 °C to +85 °C).

IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier in active-clamp forward topology.

Use Value: 175 °C max junction temperature and 1.5 °C/W R_thJC ensure stable operation under sustained 72 A load at 85 °C ambient without derating.

Automotive On-Board Chargers (OBC)

Telecom Rectifier Modules

Use Scenario: Bidirectional AC/DC and DC/DC stage in 11 kW OBCs, where same FET serves as PFC switch and isolated DC-DC rectifier.

IC Role / Device Role / Timing Role: Dual-role N-channel MOSFET in interleaved totem-pole PFC and synchronous rectifier in CLLC resonant converter.

Use Value: Avalanche rating (153 mJ) and 100% production-tested ruggedness support reliable operation during grid fault transients and battery disconnection events.

Use Scenario: 48 V telecom rectifier module delivering 100 A output with forced-air cooling and strict EMI limits.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped forward converter, driven by transformer-coupled gate signals.

Use Value: Low C_oss (600–780 pF) and Q_oss (42 nC) suppress voltage overshoot and reduce EMI filter size by 30% compared to 5 mΩ alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB031N06N3 G	R_DS(on) = 3.1 mΩ, Q_g = 42 nC, same PG-WHTFN-9 package but no top-side thermal pad.	Lacks 0.7 °C/W top-side R_thJC; limited to single-sided cooling only.	Prefer when board layout restricts top-side heatsinking and thermal budget allows 0.2 °C/W higher junction rise.
STL220N6F7AG	R_DS(on) = 2.2 mΩ, Q_g = 58 nC, PowerFLAT 5x6 package with different pinout and lower avalanche rating (100 mJ).	Higher conduction loss margin but larger gate drive demand and reduced transient ruggedness.	Select if lowest R_DS(on) dominates over switching loss and system-level surge protection is already implemented.

Compared with IPB031N06N3 G and STL220N6F7AG, IQE030N06NM5CGSCATMA1 uniquely balances ultra-low R_DS(on), low Q_g, and dual-path thermal resistance-making it optimal for thermally constrained, high-frequency, high-reliability synchronous rectification where both efficiency and ruggedness are non-negotiable.

Availability

IQE030N06NM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and automotive on-board chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IQE030N06NM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current synchronous rectification in datacenter, industrial, and EV charging power supplies where low R_DS(on), fast switching, and thermal robustness are essential.

FAQ

What is the maximum allowable gate-source voltage for IQE030N06NM5CGSCATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of −10 V to +10 V. Exceeding ±20 V risks permanent gate oxide damage. The device is rated for 100% production-tested avalanche performance at V_GS = 10 V, and gate threshold voltage is specified between 2.1 V and 3.3 V at T_j = 25 °C.

Does IQE030N06NM5CGSCATMA1 require a negative gate voltage for turn-off in high-dV/dt environments?

No. The device operates reliably with 0 V turn-off due to its normal-level gate threshold (2.1–3.3 V) and low gate leakage (<100 nA at V_GS = 20 V). Negative gate bias is not required, though −5 V may be used to improve noise immunity in noisy motor-drive or industrial settings.

How does the PG-WHTFN-9 package's wettable flank feature benefit automated optical inspection (AOI)?

The wettable flank design exposes vertical sidewalls of pins 1–4 and 5–8, enabling AOI systems to detect solder fillet height, wetting angle, and voiding on all four sides. This improves first-pass yield in high-volume server PSU manufacturing and eliminates reliance on X-ray for hidden-joint verification.

Can IQE030N06NM5CGSCATMA1 be used in parallel configurations without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (normalized increase of ~1.8× from 25 °C to 175 °C) ensures inherent current sharing. However, matched gate drive routing, symmetrical PCB layout, and identical thermal mounting are mandatory. Parallel use is validated in Infineon's AN2019-05 for up to four devices in multiphase VRMs.

IQE030N06NM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 132A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-1

IQE030N06NM5CGSCATMA1 FAQ

1.How can I place an order for IQE030N06NM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE030N06NM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE030N06NM5CGSCATMA1 reliable?

The price and inventory of IQE030N06NM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE030N06NM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE030N06NM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE030N06NM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE030N06NM5CGSCATMA1?

IQE030N06NM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE030N06NM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE030N06NM5CGSCATMA1?

For technical support, including IQE030N06NM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE030N06NM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQE030N06NM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE030N06NM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE030N06NM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE030N06NM5CGSCATMA1?

All IQE030N06NM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE030N06NM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE030N06NM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQE030N06NM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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