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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE030N06NM5SCATMA1

Name: IQE030N06NM5SCATMA1
Brand: Infineon Technologies
SKU: IQE030N06NM5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE030N06NM5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQE030N06NM5SCATMA1.pdf

Description:: OPTIMOS LOWVOLTAGE POWER MOSFET

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Product details

Overview

IQE030N06NM5SCATMA1 from Infineon Technologies is a 60 V, 3.0 mΩ N-channel OptiMOS™ 5 power MOSFET in PG-WHSON-8 package, optimized for synchronous rectification in high-efficiency DC-DC converters. It delivers 132 A continuous drain current at TC = 25 °C, features 100% avalanche tested ruggedness, and integrates an internal body diode with 31 ns reverse recovery time.

For engineers reviewing the IQE030N06NM5SCATMA1 datasheet, IQE030N06NM5SCATMA1 pinout, IQE030N06NM5SCATMA1 application, or IQE030N06NM5SCATMA1 equivalent, key selection criteria include R_DS(on) stability across temperature, Q_g/Q_oss trade-offs for hard-switched vs. synchronous FET operation, thermal resistance (R_thJC = 1.5 °C/W), and gate plateau voltage (4.2 V) for driver compatibility.

Technical Context

This device is a logic-compatible, normal-level N-channel enhancement-mode MOSFET designed for high-current, low-voltage secondary-side switching. Its 60 V V_DS rating supports 48 V input bus architectures, while its 3.0 mΩ max R_DS(on) at V_GS = 10 V enables <1.5 W conduction loss at 20 A. The integrated body diode exhibits 0.82 V typical forward voltage at 20 A and 25 °C.

The MOSFET employs Infineon's OptiMOS™ 5 trench process to achieve low Q_g (39 nC typ.) and Q_oss (42 nC typ.), enabling fast switching with reduced driver losses. Thermal design is supported by dual thermal paths: bottom-side R_thJC = 1.5 °C/W and top-side R_thJC = 0.7 °C/W, facilitating PCB- or heatsink-mounted cooling strategies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V nominal input systems with 20 % margin for transients
R_DS(on), max	3.0 mΩ at V_GS = 10 V, T_j = 25 °C - Enables ≤1.2 W conduction loss at 20 A
I_D, cont.	132 A at T_C = 25 °C - Suitable for high-current VRMs and POL converters
Q_g	39 nC typ. - Low gate drive energy reduces controller loading and EMI during turn-on
Q_oss	42 nC typ. - Minimizes capacitive turn-off loss in high-frequency synchronous rectification
E_AS	153 mJ - Confirmed single-pulse avalanche capability improves system robustness against inductive spikes
R_thJC	1.5 °C/W - Enables efficient heat transfer to heatsink or copper plane under 100 W dissipation

Pinout & Package

Package: PG-WHSON-8 (3.3 mm × 3.3 mm, 0.55 mm height), thermally enhanced wettable flank leadframe with exposed drain pad on bottom surface.

Pin/Terminal	Circuit Role	Design Meaning
1–3 (Source)	Source connection (low-side reference)	Three parallel pins reduce source inductance and improve current sharing in high-di/dt applications
4 (Gate)	Control terminal	Single gate input with 0.9 Ω internal gate resistance; compatible with standard 5–10 V logic drivers
5–8 (Drain)	Main power output / heat path	Four parallel drain pins connect directly to large internal copper clip, supporting both power conduction and thermal dissipation

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_oss ratio and 4.2 V gate plateau enable precise timing control and minimal shoot-through risk in SR controllers
100% avalanche tested	Every unit validated to withstand 153 mJ single-pulse avalanche energy-no derating required for inductive load switching
Superior thermal resistance	R_thJC = 1.5 °C/W (bottom) + 0.7 °C/W (top) allows dual-sided cooling for >100 W power handling in compact layouts
Internal body diode with fast recovery	t_rr = 31 ns typ., Q_rr = 26 nC typ. - Reduces dead-time losses and EMI in LLC and phase-shifted full-bridge topologies

Applications

Server VRM

Industrial DC-DC Converter

Use Scenario: High-density 48 V-to-12 V/5 V point-of-load conversion in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter secondary side.

Use Value: 3.0 mΩ R_DS(on) and 39 nC Q_g reduce conduction and switching losses, enabling >95 % efficiency at 200 A per phase.

Use Scenario: Isolated 24 V/48 V input DC-DC module for PLC and motor drive auxiliary supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology.

Use Value: 153 mJ avalanche rating ensures reliability during output short-circuit events without external snubbers.

Telecom Rectifier

EV Onboard Charger (OBC) Auxiliary Supply

Use Scenario: 54 V input telecom rectifier delivering 12 V/30 A to base station backplane.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge LLC resonant converter.

Use Value: 60 V V_DS and 132 A I_D support 50–60 V transient surges while maintaining safe SOA margins.

Use Scenario: 400 V-to-12 V isolated DC-DC stage powering OBC control logic and gate drivers.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped forward converter.

Use Value: Fast 31 ns t_rr and low 0.82 V V_SD minimize body diode conduction loss during dead time, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current synchronous rectification applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB031N06N	R_DS(on) = 3.1 mΩ, Q_g = 43 nC, same PG-WHSON-8 package	Slightly higher gate charge increases driver loss; identical thermal footprint	Preferred where legacy qualification or long-term supply continuity is prioritized over marginal Q_g reduction
STL220N6F7	R_DS(on) = 2.2 mΩ, Q_g = 52 nC, PowerFLAT™ 5×6 package	Lower R_DS(on) but larger footprint and higher Q_g; no wettable flanks	Selected when ultra-low conduction loss dominates over layout density and solder inspection requirements

Compared with IPB031N06N and STL220N6F7, IQE030N06NM5SCATMA1 offers the best balance of low Q_g, industry-standard wettable flank package, and proven avalanche ruggedness-critical for high-reliability telecom and server power designs.

Availability

IQE030N06NM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifiers requiring stable component supply, JEDEC-qualified industrial-grade reliability, and consistent parametric performance across production lots.

Supply support for IQE030N06NM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-current power conversion in datacenter, industrial, and telecom infrastructure where thermal performance and switching loss minimization are critical.

FAQ

What is the maximum junction temperature rating for IQE030N06NM5SCATMA1?

The device is rated for continuous operation up to T_j = 175 °C, with storage temperature spanning −55 °C to +175 °C per IEC climatic category 55/175/56. Derating of I_D and P_tot is required above T_C = 25 °C, as shown in Diagram 2 and Diagram 1 of the datasheet.

Does IQE030N06NM5SCATMA1 support 5 V gate drive?

No-it is a normal-level MOSFET with V_GS(th) = 2.1–3.3 V and specified R_DS(on) only at V_GS = 6 V and 10 V. At V_GS = 5 V, R_DS(on) rises significantly (≥5.0 mΩ), increasing conduction loss; use ≥6 V drive for reliable operation.

How is the PG-WHSON-8 package optimized for thermal performance?

The package uses a copper clip structure connecting die to exposed drain pads on both bottom and top surfaces. This enables dual thermal paths: R_thJC = 1.5 °C/W to PCB (bottom) and R_thJC = 0.7 °C/W to heatsink (top), allowing >100 W power dissipation with proper board layout and thermal interface materials.

Is the body diode suitable for freewheeling in non-synchronous topologies?

Yes-the integrated body diode has V_SD = 0.82 V typ. at 20 A and t_rr = 31 ns typ., making it viable for freewheeling in low-frequency hard-switched applications. However, its Q_rr = 26 nC limits efficiency in high-frequency operation; synchronous rectification is strongly recommended.

IQE030N06NM5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 132A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-1

IQE030N06NM5SCATMA1 FAQ

1.How can I place an order for IQE030N06NM5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE030N06NM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE030N06NM5SCATMA1 reliable?

The price and inventory of IQE030N06NM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE030N06NM5SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE030N06NM5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE030N06NM5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE030N06NM5SCATMA1?

IQE030N06NM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE030N06NM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE030N06NM5SCATMA1?

For technical support, including IQE030N06NM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE030N06NM5SCATMA1 requirements.

6.How does Aetrix verify that IQE030N06NM5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE030N06NM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE030N06NM5SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE030N06NM5SCATMA1?

All IQE030N06NM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE030N06NM5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE030N06NM5SCATMA1 part is unused and in its original packaging.

Return procedure for IQE030N06NM5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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