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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE046N08LM5ATMA1

Name: IQE046N08LM5ATMA1
Brand: Infineon Technologies
SKU: IQE046N08LM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE046N08LM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IQE046N08LM5ATMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQE046N08LM5ATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TSON-8 package, rated for 80 V V_DS, 4.6 mΩ R_DS(on) @ 10 V, and 99 A continuous drain current at T_C = 25 °C. It is optimized for high-efficiency synchronous rectification in industrial SMPS and features 100% avalanche testing, low Q_oss (39 nC), and superior thermal resistance (R_thJC = 0.9 °C/W).

For engineers reviewing the IQE046N08LM5ATMA1 datasheet, IQE046N08LM5ATMA1 pinout, IQE046N08LM5ATMA1 application, or IQE046N08LM5ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V (5.9 mΩ), gate charge profile (Q_g = 19 nC @ 4.5 V), thermal performance under forced convection, and compatibility with logic-level gate drivers in compact DC-DC converters.

Technical Context

This OptiMOSTM 5 device employs trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching dynamics: t_d(on) = 5.2 ns, t_r = 2.6 ns, and Q_gd = 6.4–9.6 nC. Its gate plateau voltage is 2.8 V, enabling robust turn-on margin with 3.3 V or 5 V controllers.

The integrated body diode exhibits low V_SD = 0.83 V @ 20 A and controlled reverse recovery (Q_rr = 26–258 nC depending on di/dt), supporting ZVS and soft-switching topologies. Thermal design is anchored by a low junction-to-case resistance (0.9 °C/W) and validated JEDEC industrial qualification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V input bus designs with 20 % derating margin for transient overvoltage.
R_DS(on) max @ 10 V	4.6 mΩ - Enables <1 W conduction loss at 20 A in high-current output rails.
R_DS(on) max @ 4.5 V	5.9 mΩ - Ensures full enhancement with standard logic-level drivers without level-shifting.
Q_g @ 4.5 V	19 nC - Allows efficient drive with low-power gate drivers (e.g., UCC2753x) at >1 MHz switching.
Q_oss	39 nC - Reduces capacitive turn-off energy loss in hard-switched buck or LLC resonant converters.
R_thJC	0.9 °C/W - Permits 100 W power dissipation with ≤90 °C temperature rise from junction to case.
E_AS	170 mJ - Withstands single-pulse inductive energy in motor drive or relay snubbing applications.

Pinout & Package

Package: PG-TSON-8 (exposed drain pad), 3.3 mm × 3.3 mm × 0.85 mm, RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1–3, Source	Source terminal (common return path)	Three parallel pins reduce source inductance and improve current sharing in high-di/dt layouts.
4, Gate	Gate control input	Single low-inductance gate connection supports clean edge integrity and minimizes ringing.
5–8, Drain	Drain terminal (power input/output node)	Four-pin drain layout maximizes copper area for thermal conduction and reduces parasitic inductance.

Key Features

Feature	Design Value
Logic-level gate drive	Full enhancement at V_GS ≥ 4.5 V enables direct interface with MCU GPIOs and low-voltage PWM controllers.
100 % avalanche rated	Guaranteed single-pulse E_AS = 170 mJ ensures reliability in inductive load switching without external clamping.
Low Q_gd/Q_g ratio	Q_gd = 6.4–9.6 nC / Q_g = 19 nC → ~34–50 % - Improves Miller immunity and reduces risk of false turn-on.
Optimized body diode	V_SD = 0.83 V @ 20 A and trr = 32–64 ns (di/dt = 100 A/µs) - Supports efficient synchronous rectification with minimal reverse recovery loss.

Applications

Server VRM

Industrial SMPS

Use Scenario: High-density 12 V input, 0.8–1.8 V output buck converter supplying CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in high-side or low-side position, switching at 500 kHz–1 MHz.

Use Value: 4.6 mΩ R_DS(on) and 5.9 mΩ @ 4.5 V minimize conduction loss; low Q_oss reduces turn-off loss at high frequency.

Use Scenario: 48 V–12 V isolated DC-DC module for PLC I/O power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology.

Use Value: Avalanche rating and robust body diode allow safe operation during transformer leakage spikes and light-load discontinuous conduction.

Telecom PSU

Motor Drive Inverter

Use Scenario: 54 V input telecom rectifier with OR-ing and hot-swap protection.

IC Role / Device Role / Timing Role: Load switch and reverse polarity protection element in front-end power stage.

Use Value: Low R_DS(on) limits insertion loss; 80 V rating accommodates 57 V nominal + 20 % surge per GR-1089.

Use Scenario: Half-bridge leg in 24–48 V BLDC inverter for HVAC blowers or industrial pumps.

IC Role / Device Role / Timing Role: Low-side switch handling 30–60 A peak phase current with PWM commutation.

Use Value: 99 A I_D rating and 0.9 °C/W R_thJC support sustained 40 A RMS with minimal heatsink; 100 % avalanche test covers inductive kickback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB046N08N5ATMA1	Same OptiMOSTM 5 family, identical R_DS(on) (4.6 mΩ @ 10 V), but in PG-TO263-7 package with higher R_thJA (30 °C/W vs. 60 °C/W on PCB).	Better suited for high-power discrete mounting with external heatsink; less optimal for space-constrained board-level integration.	Select when thermal budget allows TO-263 footprint and higher peak power (>150 W) is required.
IRL1404ZPBF	Legacy generation: R_DS(on) = 4.8 mΩ @ 10 V, but Q_g = 62 nC (vs. 19 nC), Q_oss = 120 nC (vs. 39 nC), and no avalanche rating.	Limited to lower-frequency (<300 kHz), non-avalanche-critical applications due to higher switching loss and untested ruggedness.	Acceptable only for cost-sensitive legacy designs where efficiency and reliability margins are relaxed.

Compared with IPB046N08N5ATMA1 and IRL1404ZPBF, IQE046N08LM5ATMA1 delivers best-in-class switching efficiency (low Q_g/Q_oss) and ruggedness in a compact surface-mount package ideal for high-density, high-reliability industrial and telecom power systems.

Availability

IQE046N08LM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, telecom PSUs, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IQE046N08LM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM 5 power transistor product line, engineered specifically for high-efficiency, high-reliability DC-DC conversion in industrial, telecom, and computing infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQE046N08LM5ATMA1 supports 70 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the datasheet. This rating reflects thermal de-rating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and must be verified against actual PCB layout and cooling conditions.

Is this MOSFET suitable for use with 3.3 V microcontroller GPIOs?

Yes - its logic-level threshold (V_GS(th) = 1.1–2.3 V) and guaranteed R_DS(on) of 5.9 mΩ at V_GS = 4.5 V ensure reliable enhancement with 3.3 V outputs when driven through a low-impedance path. However, gate drive strength and PCB layout must limit series inductance to avoid slow turn-on and shoot-through risk.

Does the device include integrated ESD protection on the gate?

No - the IQE046N08LM5ATMA1 does not integrate gate ESD protection diodes. External gate protection (e.g., 12 V Zener clamp between gate and source) is recommended in automated assembly or high-static environments to prevent damage from HBM > 2 kV, as typical for discrete power MOSFETs without built-in protection.

How does the body diode performance compare to Schottky alternatives?

The integrated body diode has V_SD = 0.83 V @ 20 A and t_rr = 32–64 ns, offering lower forward drop than standard silicon diodes but higher than Schottky rectifiers. Unlike Schottky devices, it is co-packaged and thermally coupled to the MOSFET die, enabling precise timing control in synchronous rectification without external component matching.

IQE046N08LM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 15.6A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 47µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3250 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-5

IQE046N08LM5ATMA1 FAQ

1.How can I place an order for IQE046N08LM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE046N08LM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE046N08LM5ATMA1 reliable?

The price and inventory of IQE046N08LM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE046N08LM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IQE046N08LM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE046N08LM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE046N08LM5ATMA1?

IQE046N08LM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE046N08LM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE046N08LM5ATMA1?

For technical support, including IQE046N08LM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE046N08LM5ATMA1 requirements.

6.How does Aetrix verify that IQE046N08LM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE046N08LM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE046N08LM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IQE046N08LM5ATMA1?

All IQE046N08LM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE046N08LM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE046N08LM5ATMA1 part is unused and in its original packaging.

Return procedure for IQE046N08LM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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