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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE046N08LM5SCATMA1

Name: IQE046N08LM5SCATMA1
Brand: Infineon Technologies
SKU: IQE046N08LM5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE046N08LM5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQE046N08LM5SCATMA1.pdf

Description:: OPTIMOS 5 POWER-TRANSISTOR 60V

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Product details

Overview

IQE046N08LM5SCATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET optimized for synchronous rectification in high-efficiency SMPS, featuring 80 V V_DS, 4.6 mΩ R_DS(on) @ 10 V, 99 A continuous drain current at T_C = 25 °C, and PG-WHSON-8 package with exposed drain pad. It integrates a robust internal body diode and is fully qualified per JEDEC for industrial applications.

For engineers reviewing the IQE046N08LM5SCATMA1 datasheet, IQE046N08LM5SCATMA1 pinout, IQE046N08LM5SCATMA1 application, or IQE046N08LM5SCATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 100% avalanche testing, thermal resistance (R_thJC = 0.9 °C/W bottom), Q_g = 19 nC (0–4.5 V), and compliance with RoHS and halogen-free standards.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) enables reliable logic-level drive, and the integrated body diode supports bidirectional current flow in DC-DC converters.

The MOSFET delivers 170 mJ single-pulse avalanche energy and exhibits low dynamic parameters: C_iss = 3250 pF max, Q_gd = 9.6 nC, and t_r/t_f = 2.6/4.4 ns - enabling high-frequency operation up to 1 MHz in resonant and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input bus designs with 20 % margin for transients
R_DS(on) max @ 10 V	4.6 mΩ - enables <1 W conduction loss at 99 A in high-current synchronous rectifiers
R_DS(on) max @ 4.5 V	5.9 mΩ - ensures stable turn-on with standard 3.3 V/5 V controller outputs
Q_g (0–4.5 V)	19 nC - balances switching speed and gate driver power loss in 300–1000 kHz SMPS
Q_oss	39 nC - reduces capacitive turn-off loss and improves light-load efficiency
R_thJC (bottom)	0.9 °C/W - allows >100 W power dissipation with minimal case-to-heatsink ΔT
E_AS	170 mJ - withstands repetitive inductive switching stress without failure

Pinout & Package

Package: PG-WHSON-8 (3.3 mm × 3.3 mm, 0.55 mm height), thermally enhanced with exposed drain pad on bottom side and source/gate terminals on top surface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8)	Main current path from drain to source	Exposed copper pad (Pins 5–8) provides low-inductance, high-current path and primary thermal conduction to PCB heatsink
Gate (Pin 4)	Control electrode for channel formation	Single top-side gate terminal minimizes gate loop inductance; compatible with standard SMT gate drivers
Source (Pins 1–3)	Reference node for gate drive and current return	Three parallel top-side source pins reduce source inductance and improve stability in high-dI/dt switching

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.7 V typ enables direct interface with 3.3 V microcontrollers and PWM controllers without level-shifting
Optimized for synchronous rectification	Low Q_rr (26–258 nC) and fast t_rr (18–64 ns) minimize reverse recovery losses in LLC and phase-shifted full-bridge converters
100 % avalanche rated	Guaranteed E_AS = 170 mJ supports rugged operation in unregulated or fault-prone power stages
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - suitable for automotive and industrial end equipment with strict material compliance requirements

Applications

Server VRMs

Industrial DC-DC Converters

Use Scenario: High-density 48 V–12 V buck converters delivering >200 A to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck stages, operating at 500–800 kHz with interleaved control.

Use Value: 4.6 mΩ R_DS(on) and 0.9 °C/W R_thJC enable >95 % efficiency at full load while limiting junction temperature rise to <40 °C above case.

Use Scenario: 24 V input isolated forward or active-clamp forward converters powering PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and thermal footprint.

Use Value: 5.9 mΩ R_DS(on) @ 4.5 V ensures full enhancement with standard 5 V gate drivers; Q_oss = 39 nC lowers turn-off loss during zero-voltage switching transitions.

Telecom Power Supplies

EV On-Board Chargers (OBC)

Use Scenario: 54 V telecom rectifiers (–48 V system) with distributed power architecture feeding intermediate bus converters.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge LLC resonant converters operating at 200–400 kHz.

Use Value: Avalanche rating (170 mJ) handles line surges and transformer leakage spikes; C_iss/C_oss ratio supports ZVS across wide load range.

Use Scenario: Bidirectional CLLC resonant converter in 11 kW OBCs converting AC grid to 400 V battery and vice versa.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge, conducting bidirectional current via integrated body diode during reverse power flow.

Use Value: Body diode V_SD = 0.83 V @ 20 A and t_rr = 18 ns @ 1000 A/µs enable efficient reverse conduction with minimal reverse recovery loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB046N08N5ATMA1	Same OptiMOSTM 5 family; identical R_DS(on), V_DS, and package but higher Q_g (24 nC vs. 19 nC)	Slightly slower switching; better suited for lower-frequency (<300 kHz), higher-current applications where gate drive loss is less critical	Select when prioritizing peak current handling over switching efficiency
IRFH8326TRPBF	80 V, 4.2 mΩ @ 10 V, SO-8 package; higher R_thJA (60 °C/W vs. 60 °C/W same, but no exposed drain), Q_g = 22 nC	Limited thermal performance in high-power density layouts due to lack of bottom-side thermal pad	Choose only if board layout restricts WHSON-8 footprint or requires through-hole compatibility

Compared with IPB046N08N5ATMA1 and IRFH8326TRPBF, IQE046N08LM5SCATMA1 offers the lowest Q_g (19 nC) and best thermal resistance (0.9 °C/W) in its class, making it optimal for compact, high-frequency SMPS where gate drive efficiency and junction temperature control are critical.

Availability

IQE046N08LM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IQE046N08LM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and qualification infrastructure aligned to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 5 power transistor product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies - emphasizing low R_DS(on), fast switching, and ruggedness in industrial and computing applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQE046N08LM5SCATMA1 supports 62 A continuous drain current at T_C = 100 °C with V_GS = 4.5 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits under real-world heatsinking conditions and must be validated against actual board layout and ambient airflow.

Does this MOSFET require a gate resistor for stability in high-frequency operation?

Yes - a 1.6 Ω external gate resistor is used in the datasheet's switching time test conditions (Table 5). For 500–1000 kHz operation, a 1–5 Ω series gate resistor is recommended to dampen ringing, limit peak gate current, and ensure clean turn-on/turn-off edges without overshoot.

Can the internal body diode handle reverse current in bidirectional CLLC converters?

Yes - the body diode is rated for 83 A continuous forward current (T_C = 25 °C) and 396 A pulsed current, with t_rr = 18 ns at diF/dt = 1000 A/µs. Its low V_SD (0.83 V) and controlled Q_rr (129 nC) make it suitable for reverse conduction in bidirectional OBC topologies.

Is PG-WHSON-8 soldering compatible with standard reflow profiles?

Yes - the PG-WHSON-8 package is qualified for lead-free reflow per J-STD-020, with peak temperature up to 260 °C. The exposed drain pad requires adequate stencil design (≥75 % paste coverage) and thermal relief patterns to ensure void-free solder joints and optimal thermal transfer to the PCB ground plane.

IQE046N08LM5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 15.6A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 47µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3250 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-1

IQE046N08LM5SCATMA1 FAQ

1.How can I place an order for IQE046N08LM5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE046N08LM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE046N08LM5SCATMA1 reliable?

The price and inventory of IQE046N08LM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE046N08LM5SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE046N08LM5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE046N08LM5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE046N08LM5SCATMA1?

IQE046N08LM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE046N08LM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE046N08LM5SCATMA1?

For technical support, including IQE046N08LM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE046N08LM5SCATMA1 requirements.

6.How does Aetrix verify that IQE046N08LM5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE046N08LM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE046N08LM5SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE046N08LM5SCATMA1?

All IQE046N08LM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE046N08LM5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE046N08LM5SCATMA1 part is unused and in its original packaging.

Return procedure for IQE046N08LM5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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