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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE050N08NM5SCATMA1

Name: IQE050N08NM5SCATMA1
Brand: Infineon Technologies
SKU: IQE050N08NM5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE050N08NM5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQE050N08NM5SCATMA1.pdf

Description:: OPTIMOS LOWVOLTAGE POWER MOSFET

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Product details

Overview

IQE050N08NM5SCATMA1 from Infineon Technologies is an N-channel 80 V OptiMOSTM 5 power MOSFET optimized for synchronous rectification in DC-DC converters, featuring 5.0 mΩ max R_DS(on) at V_GS = 10 V, 99 A continuous drain current (T_C = 25 °C), and PG-WHSON-8 package with exposed drain pad for thermal performance.

For engineers reviewing the IQE050N08NM5SCATMA1 datasheet, IQE050N08NM5SCATMA1 pinout, IQE050N08NM5SCATMA1 application, or IQE050N08NM5SCATMA1 equivalent, key selection criteria include low R_DS(on), fast switching (Q_g = 35 nC, t_r = 4.6 ns), integrated body diode recovery (t_rr = 37–74 ns), and industrial-grade qualification per JEDEC.

Technical Context

This MOSFET employs a trench-based silicon process to achieve ultra-low on-resistance and superior thermal resistance (R_thJC = 0.9 °C/W bottom, 0.7 °C/W top). Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 5 V/10 V logic-level drive while maintaining robust noise immunity.

The device integrates a fast-recovery body diode (Q_rr = 30–60 nC, t_rr = 37–74 ns) and is fully avalanche-rated (E_AS = 184 mJ), enabling reliable operation in hard-switched and synchronous buck topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports input rails up to 60 V nominal in isolated/non-isolated DC-DC converters with margin for transients.
R_DS(on), max	5.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-efficiency 48 V–12 V point-of-load stages.
I_D, cont.	99 A @ T_C = 25 °C - Sustains high-current output in server VRMs and telecom power modules with proper heatsinking.
Q_g	35 nC - Low gate charge reduces driver power and enables >1 MHz switching in advanced GaN-assisted hybrid designs.
t_r/t_f	4.6 ns / 4.0 ns - Fast edge rates minimize switching losses and EMI generation in compact, high-density power supplies.
E_AS	184 mJ - Withstands single-pulse inductive energy without failure, eliminating need for external snubbers in flyback or LLC resonant circuits.
Q_oss	40 nC - Low output charge improves light-load efficiency and soft-switching behavior in ZVS topologies.

Pinout & Package

PG-WHSON-8 package with thermally enhanced bottom-exposed drain pad (Pins 5–8), source terminals on Pins 1–3, and gate on Pin 4. Designed for solder-down thermal interface to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–3	Source	Low-impedance return path for load current; tied to power ground plane for minimal loop inductance.
Pin 4	Gate	Control input requiring <35 nC charge; routed away from noisy power traces to prevent false turn-on.
Pins 5–8	Drain	Main power output node; connected to large copper pour for thermal dissipation and low-inductance high-side switching.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_oss ratio and fast body diode enable >95% efficiency in 48 V–12 V buck converters at 500 kHz.
100% avalanche tested	Guarantees ruggedness against inductive kickback in motor drives and unregulated input applications without derating.
Superior thermal resistance	R_thJC = 0.7 °C/W (top) allows direct thermal interface to heatsink or cold plate in space-constrained industrial SMPS.
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21, supporting environmental compliance for automotive and industrial end equipment.

Applications

Server VRM

Telecom DC-DC Converter

Use Scenario: 48 V input to 1 V/100 A output stage in AI accelerator card power delivery.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, replacing Schottky diodes to reduce conduction loss.

Use Value: 5.0 mΩ R_DS(on) cuts rectifier loss by >60% vs. discrete diode solution, enabling 94.2% peak efficiency at full load.

Use Scenario: Intermediate bus converter (48 V → 12 V) in 5G base station power shelf.

IC Role / Device Role / Timing Role: High-current primary-side switch in hard-switched forward topology with active clamp.

Use Value: 184 mJ E_AS rating eliminates need for external clamping circuitry, reducing BOM count and board area.

Industrial Motor Drive

EV On-Board Charger

Use Scenario: Half-bridge leg in 24 V BLDC gate driver module for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling PWM-driven motor phase current.

Use Value: 37–74 ns t_rr ensures clean commutation with minimal shoot-through risk during dead-time transitions.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC LLC resonant converter.

IC Role / Device Role / Timing Role: High-frequency rectifying switch operating at 300–500 kHz with zero-voltage switching.

Use Value: 40 nC Q_oss minimizes capacitive turn-on loss, improving light-load efficiency by 2.1% over legacy MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB050N08N5ATMA1	Same OptiMOSTM 5 platform, identical R_DS(on) and Q_g, but in PG-TO263-7 package with higher R_thJA (60 °C/W vs. 30 °C/W).	Preferred where through-hole mounting and manual rework are required; less suitable for ultra-thin PCBs.	Select when thermal interface to heatsink is via top side, not PCB copper.
IRFH7107TRPBF	Higher R_DS(on) (6.1 mΩ), larger Q_g (42 nC), and slower t_r (7.5 ns); same 80 V rating and WHSON-8 footprint.	Acceptable in lower-frequency (<300 kHz) telecom PSUs where efficiency margin is relaxed.	Choose only if cost sensitivity outweighs efficiency and thermal targets.

Compared with IPB050N08N5ATMA1 and IRFH7107TRPBF, IQE050N08NM5SCATMA1 delivers best-in-class thermal performance in surface-mount form factor and highest efficiency at >400 kHz switching, making it optimal for next-gen high-density power systems.

Availability

IQE050N08NM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IQE050N08NM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current power conversion in datacenter, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum junction temperature rating for IQE050N08NM5SCATMA1?

The device is rated for continuous operation from –55 °C to +175 °C junction temperature per IEC climatic category 55/175/56. The absolute maximum T_j is 175 °C, and thermal design must ensure this limit is not exceeded under worst-case ambient and power dissipation conditions, using the provided R_thJC values and PCB cooling area specifications.

Does IQE050N08NM5SCATMA1 require a gate resistor for stability?

Yes-a series gate resistor (typically 1.6 Ω, as used in datasheet switching characterization) is recommended to dampen ringing, control dV/dt, and prevent parasitic oscillation. The internal gate resistance is 0.62 Ω, so external resistance should be selected based on driver capability, layout inductance, and desired switching speed versus EMI trade-off.

Can IQE050N08NM5SCATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (verified in Diagram 9) ensures inherent current sharing when paralleled. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are mandatory to avoid dynamic imbalance; parallel use is validated in multi-phase VRM reference designs from Infineon.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the body diode is characterized with t_rr = 37–74 ns and Q_rr = 30–60 nC at 100 A/µs diF/dt, making it suitable for synchronous rectification in hard-switched buck and forward converters. It is not intended for freewheeling in high-di/dt inductive loads without snubbing.

IQE050N08NM5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 49µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-1

IQE050N08NM5SCATMA1 FAQ

1.How can I place an order for IQE050N08NM5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE050N08NM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE050N08NM5SCATMA1 reliable?

The price and inventory of IQE050N08NM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE050N08NM5SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE050N08NM5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE050N08NM5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE050N08NM5SCATMA1?

IQE050N08NM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE050N08NM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE050N08NM5SCATMA1?

For technical support, including IQE050N08NM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE050N08NM5SCATMA1 requirements.

6.How does Aetrix verify that IQE050N08NM5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE050N08NM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE050N08NM5SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE050N08NM5SCATMA1?

All IQE050N08NM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE050N08NM5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE050N08NM5SCATMA1 part is unused and in its original packaging.

Return procedure for IQE050N08NM5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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