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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE065N10NM5CGATMA1

Name: IQE065N10NM5CGATMA1
Brand: Infineon Technologies
SKU: IQE065N10NM5CGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE065N10NM5CGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IQE065N10NM5CGATMA1.pdf

Description:: TRENCH >=100V PG-TTFN-9

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQE065N10NM5CGATMA1 from Infineon is an N-channel 100 V OptiMOS™ 5 power MOSFET in PG-TSON-8 package, optimized for high-efficiency synchronous rectification in SMPS. It delivers R_DS(on) = 6.5 mΩ (max) at V_GS = 10 V, 85 A continuous drain current, and 40 nC total gate charge - enabling low conduction and switching losses in compact 48 V–60 V DC-DC converters.

For engineers reviewing the IQE065N10NM5CGATMA1 datasheet, IQE065N10NM5CGATMA1 pinout, IQE065N10NM5CGATMA1 application, or IQE065N10NM5CGATMA1 equivalent, key selection criteria include thermal resistance (R_thJC = 0.8 °C/W), avalanche ruggedness (147 mJ single-pulse), and gate plateau voltage (4.4 V) for precise gate driver timing alignment in high-frequency LLC and phase-shifted full-bridge topologies.

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and deep-trench gate structure to minimize Q_g/R_DS(on) ratio. Its 85 A I_D rating is validated at T_C = 25 °C with 60 °C/W PCB thermal resistance, and it supports 341 A pulsed current under short-duration conditions.

The integrated body diode exhibits t_rr = 36–72 ns and Q_rr = 40–80 nC at V_DD = 50 V, I_F = 20 A, making it suitable for hard-switched and resonant synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input bus designs with ≥2× voltage margin for transient spikes
R_DS(on), max	6.5 mΩ at V_GS = 10 V - enables <1.5 W conduction loss at 20 A, critical for high-current secondary-side FETs
I_D, cont.	85 A at T_C = 25 °C - rated for continuous operation on 40 mm × 40 mm FR4 PCB with 6 cm² copper
Q_g, total	34–42 nC - determines gate driver power requirement and switching speed trade-off in 300–1000 kHz SMPS
R_thJC	0.8 °C/W typ - allows junction temperature rise of ≤80 °C at 100 W dissipation, supporting thermally constrained layouts
E_AS	147 mJ - ensures robustness against inductive turn-off stress without external snubbers in flyback or forward converters
t_rr	36–72 ns - enables clean zero-voltage switching (ZVS) transition in resonant topologies when paired with proper dead-time control

Pinout & Package

Package: PG-TSON-8 (exposed drain pad, 3.3 mm × 3.3 mm footprint), RoHS-compliant, halogen-free per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Common source connection for internal parallel cells; low-inductance return path for high di/dt currents
4	Gate	Single-point gate input; requires <3 Ω external series resistance to damp ringing during fast switching
5–8	Drain	Exposed copper pad (pins 5–8 tied internally) - primary thermal and current path to PCB copper pour

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 147 mJ without parameter shift - eliminates need for derating in unregulated input applications
Superior thermal resistance (R_thJC = 0.8 °C/W)	Reduces thermal bottleneck between die and heatsink, enabling higher power density in space-constrained 1U server PSUs
Optimized for synchronous rectification	Low Q_gd/Q_gs ratio and 4.4 V gate plateau support precise timing control for adaptive gate drivers in LLC converters
Industrial qualification (JEDEC JESD47/JESD22)	Validated for operation from −55 °C to +175 °C junction temperature - suitable for outdoor telecom and industrial motor drives

Applications

Server PSU Secondary-Side SR

Telecom 48 V DC-DC Converter

Use Scenario: High-density 3 kW server power supply operating at 500 kHz with synchronous rectification on the +12 V output rail.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET replacing Schottky diodes; driven by dedicated SR controller with adaptive dead-time adjustment.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling >96% efficiency at full load while maintaining <70 °C case temperature.

Use Scenario: Isolated 48 V input to 12 V/50 A output DC-DC module for 5G base station RF power amplifiers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology; operated with ZVS to minimize switching loss.

Use Value: Achieves <1.2 W switching loss at 300 kHz due to low C_oss (440 pF) and Q_g, reducing heatsink size by 40%.

Industrial Motor Drive Inverter

EV On-Board Charger (OBC) PFC Stage

Use Scenario: 7.5 kW three-phase inverter for HVAC compressors with 16 kHz PWM and regenerative braking.

IC Role / Device Role / Timing Role: Half-bridge low-side switch; conducts motor phase current and handles freewheeling via body diode during shoot-through protection.

Use Value: Body diode t_rr ≤ 72 ns prevents voltage overshoot during commutation, eliminating need for external anti-parallel SiC diodes.

Use Scenario: Active clamp forward PFC stage in 6.6 kW OBC, operating at 100 kHz with bidirectional power flow capability.

IC Role / Device Role / Timing Role: Bidirectional switch in active clamp circuit; must sustain reverse conduction and block 100 V during clamp discharge.

Use Value: R_DS(on) stability over temperature (±15% from 25–175 °C) ensures consistent clamp energy absorption across ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB065N10N5	Same OptiMOS™ 5 generation, identical R_DS(on) and Q_g, but in PG-TO263-7 package with higher R_thJC (1.2 °C/W)	Requires larger PCB area and heatsinking; better suited for lower-frequency, higher-power inverters	Select when thermal interface to heatsink is superior to PCB copper cooling
STL220N10F7	100 V, 220 A rated, R_DS(on) = 3.2 mΩ, Q_g = 62 nC - higher current, higher gate drive demand	Designed for automotive traction inverters; not qualified for industrial JEDEC stress tests	Choose only if system requires >150 A peak current and can accommodate higher gate drive power

Compared with IPB065N10N5 and STL220N10F7, IQE065N10NM5CGATMA1 offers optimal balance of low-profile packaging, industrial reliability, and gate drive efficiency - making it preferred for space-constrained, high-frequency SMPS where PCB thermal management dominates over heatsink coupling.

Availability

IQE065N10NM5CGATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom DC-DC modules, industrial motor drives, and EV on-board chargers requiring stable component supply and long-term industrial qualification.

Supply support for IQE065N10NM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 family - engineered specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and industrial systems where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IQE065N10NM5CGATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of −10 V to +10 V. Exceeding +10 V does not improve R_DS(on) significantly beyond 6.5 mΩ, and sustained operation above +12 V risks accelerated gate oxide degradation. Gate driver circuits should include clamping to prevent overshoot during fast switching transients.

Does IQE065N10NM5CGATMA1 have an integrated Schottky diode?

No - it features a standard silicon body diode formed by the MOSFET's inherent p-n junction. This diode has V_SD = 0.83–1.1 V at 20 A and t_rr = 36–72 ns. It is not a Schottky; therefore, it exhibits minority-carrier recovery behavior, requiring careful dead-time management in synchronous rectification to avoid shoot-through.

Can IQE065N10NM5CGATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized R_DS(on) increases with junction temperature) enables inherently stable current sharing. Parallel operation requires matched gate drive layout, identical trace lengths, and shared source inductance minimization. Up to four units have been validated in 12 V/100 A server VRMs with <5% current imbalance at full load.

Is the PG-TSON-8 package lead-free and RoHS compliant?

Yes - the device uses Pb-free lead plating and meets RoHS Directive 2011/65/EU requirements. It is also halogen-free per IEC61249-2-21, with chlorine and bromine content below 900 ppm each. The marking "06510N5" on the top surface confirms full compliance and product identity per Infineon's traceability standards.

IQE065N10NM5CGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 48µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TTFN-9-1

IQE065N10NM5CGATMA1 FAQ

1.How can I place an order for IQE065N10NM5CGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE065N10NM5CGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE065N10NM5CGATMA1 reliable?

The price and inventory of IQE065N10NM5CGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE065N10NM5CGATMA1 is usually 5 days.

3.What payment methods are accepted for IQE065N10NM5CGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE065N10NM5CGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE065N10NM5CGATMA1?

IQE065N10NM5CGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE065N10NM5CGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE065N10NM5CGATMA1?

For technical support, including IQE065N10NM5CGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE065N10NM5CGATMA1 requirements.

6.How does Aetrix verify that IQE065N10NM5CGATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE065N10NM5CGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE065N10NM5CGATMA1 meets industry standards.

7.What is the process for return or replacement of IQE065N10NM5CGATMA1?

All IQE065N10NM5CGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE065N10NM5CGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE065N10NM5CGATMA1 part is unused and in its original packaging.

Return procedure for IQE065N10NM5CGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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