Infineon Technologies IQE065N10NM5SCATMA1

Overview

IQE065N10NM5SCATMA1 from Infineon Technologies is an N-channel 100 V OptiMOSTM 5 power MOSFET in PG-WHSON-8 package, optimized for synchronous rectification in high-efficiency SMPS. It delivers 6.5 mΩ RDS(on) max at VGS = 10 V, 85 A continuous drain current at TC = 25 °C, and 147 mJ single-pulse avalanche energy - enabling robust operation in server VRMs and telecom DC/DC converters.

For engineers reviewing the IQE065N10NM5SCATMA1 datasheet, IQE065N10NM5SCATMA1 pinout, IQE065N10NM5SCATMA1 application, or IQE065N10NM5SCATMA1 equivalent, key selection criteria include thermal resistance (RthJC = 0.8 °C/W bottom), gate charge (Qg = 34 nC), output charge (Qoss = 40 nC), and integrated body diode performance (VSD = 0.83 V @ 20 A).

Technical Context

This device employs a trench-gate superjunction structure with optimized cell pitch and charge compensation to achieve low RDS(on) × Qg figure-of-merit (FoM) of ~230 Ω·nC. Its PG-WHSON-8 package features exposed drain pad on bottom side for direct PCB thermal coupling and source/gate terminals on top surface for compact layout.

The internal body diode is characterized for reverse recovery (trr = 36–72 ns, Qrr = 40–80 nC) under controlled diF/dt = 100 A/µs, supporting ZVS and soft-switching topologies. Gate plateau voltage is specified at 4.4 V, aligning with standard 5 V logic-level drive compatibility while maintaining noise immunity.

Key Specifications

Pinout & Package

PG-WHSON-8 is a 3.3 mm × 3.3 mm, 0.65 mm height, thermally enhanced leadless package with exposed drain pad on bottom and top-side source/gate terminals. Pin numbering follows JEDEC MO-229 standard: pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain (common).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IPB110N10N5L3ATMA1 and STL220N10F7AG, IQE065N10NM5SCATMA1 offers the best balance of conduction efficiency (6.5 mΩ), gate drive demand (34 nC), and thermal robustness (0.8 °C/W), making it optimal for space-constrained, medium-to-high current SMPS where thermal management and driver simplicity are prioritized.

Availability

IQE065N10NM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IQE065N10NM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 5 family - engineered specifically for high-frequency, high-efficiency power conversion in data center, telecom, and industrial SMPS, emphasizing FoM optimization and ruggedness.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies 85 A ID at TC = 25 °C and de-rates linearly to 46 A at TC = 100 °C. The absolute maximum case temperature is 175 °C per IEC climatic category 55/175/56, but sustained operation above 125 °C requires thermal modeling to ensure junction temperature remains below 175 °C with actual RthJA.

Does this MOSFET require a negative gate turn-off voltage?

No. The gate threshold voltage is 2.2–3.8 V, and the device fully turns off with VGS = 0 V. Negative gate bias is not required or recommended; standard 0 V to 10 V gate drive suffices for reliable switching and avoids unnecessary gate oxide stress.

Can the internal body diode be used for freewheeling in non-synchronous designs?

Yes - the diode is rated for 74 A continuous forward current at TC = 25 °C and characterized for trr = 36–72 ns. However, its VSD = 0.83 V is higher than Schottky alternatives, so conduction loss will be greater than external diodes in high-duty-cycle freewheeling applications.

Is PG-WHSON-8 compatible with standard reflow profiles for lead-free assembly?

Yes - the package uses Pb-free lead plating and is qualified for standard IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for 30 seconds. The exposed drain pad requires adequate stencil design and solder paste volume to ensure void-free thermal interface formation.