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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE220N15NM5ATMA1

Name: IQE220N15NM5ATMA1
Brand: Infineon Technologies
SKU: IQE220N15NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE220N15NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IQE220N15NM5ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:5,000

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Product details

Overview

IQE220N15NM5ATMA1 from Infineon Technologies is an N-channel 150 V OptiMOSTM 5 power MOSFET in PG-TSON-8-5 package, featuring 22 mΩ max RDS(on), 44 A continuous drain current, and 100% avalanche tested robustness. It serves as a high-efficiency synchronous rectifier or primary-side switch in industrial SMPS, with optimized thermal resistance (RthJC = 0.8 °C/W) and low Qoss (40 nC) for fast switching.

For engineers reviewing the IQE220N15NM5ATMA1 datasheet, IQE220N15NM5ATMA1 pinout, IQE220N15NM5ATMA1 application, or IQE220N15NM5ATMA1 equivalent, key selection criteria include its 150 V VDS rating, 14.4 nC total gate charge, 17.2–22 mΩ RDS(on) range at VGS = 10 V, and PG-TSON-8-5 thermal performance under 100 °C case temperature constraints.

Technical Context

This MOSFET employs trench-gate superjunction architecture to achieve low conduction loss and high dv/dt immunity. Its gate threshold voltage (3.0–4.6 V) ensures stable turn-on control in 12 V gate-drive systems, while the 5.8 V gate plateau supports reliable Miller region control during hard-switching transitions.

The device integrates a low-VF body diode (0.86 V typ at 22 A) with fast reverse recovery (trr = 25–50 ns) and low Qrr (17–34 nC), enabling efficient operation in synchronous rectification and freewheeling paths without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V input DC-DC converters and 100 V bus applications.
RDS(on),max	22 mΩ - Enables ≤1.9 W conduction loss at 44 A ID, critical for high-current output stages in telecom and server PSUs.
ID,cont	44 A - Continuous drain current at TC = 25 °C, de-rates to 31 A at TC = 100 °C per thermal limits.
Qg	14.4 nC - Total gate charge determines drive strength requirement; enables <10 ns switching with 1.6 Ω external gate resistor.
Qoss	40 nC - Output charge directly impacts turn-off energy loss; low value reduces switching loss in high-frequency SMPS (>300 kHz).
RthJC	0.8 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting on PCB copper area for compact thermal design.
VGS(th)	3.0–4.6 V - Gate threshold spread ensures predictable turn-on across temperature and process variation in industrial environments.

Pinout & Package

Package: PG-TSON-8-5 (Power Thin Small Outline No-lead, 8-pin, exposed drain pad). Thermally enhanced surface-mount package with bottom-side thermal pad for direct PCB copper cooling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–3	Source	Common source connection for all three internal parallel dies; tied to PCB ground plane for low-inductance return path.
Pin 4	Gate	Single gate input terminal; requires low-impedance driver to manage 14.4 nC charge and minimize Miller-induced shoot-through risk.
Pin 5–8	Drain	Parallel-connected drain terminals forming large-area exposed copper pad; primary thermal and high-current path to PCB heatsink area.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 40 mJ capability, enabling robust operation under inductive load switching faults without derating.
Superior thermal resistance	RthJC = 0.8 °C/W allows >100 W power dissipation with minimal junction-to-heatsink ΔT, reducing need for bulky external cooling.
Optimized for synchronous rectification	Low Qrr (17–34 nC) and fast trr (25–50 ns) minimize body diode conduction loss and reverse recovery spikes in LLC and phase-shifted full-bridge topologies.
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 halogen-free construction meet industrial and automotive environmental compliance requirements.

Applications

Telecom AC-DC Front-End Rectification

Server PSU Secondary-Side Synchronous Rectifier

Use Scenario: High-density 48 V input AC-DC front-end converting to 12 V intermediate bus in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–300 kHz with 150 V blocking requirement and tight thermal envelope.

Use Value: 22 mΩ RDS(on) and 0.8 °C/W RthJC enable >95% efficiency at 40 A load while maintaining Tj < 125 °C on 6 cm² PCB copper.

Use Scenario: 12 V → 1 V/300 A point-of-load conversion in AI accelerator server PSUs using multiphase buck topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 1 MHz buck converter, replacing Schottky diodes to reduce conduction loss.

Use Value: Body diode VSD = 0.86 V and Qrr = 17 nC cut reverse recovery loss by >60% versus discrete Schottky, improving light-load efficiency.

Industrial Motor Drive Half-Bridge Leg

EV On-Board Charger (OBC) DC-DC Stage

Use Scenario: 48 V battery-powered servo drive with integrated half-bridge output stage controlling BLDC motor windings.

IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM-driven half-bridge, handling bidirectional current and regenerative braking energy.

Use Value: Avalanche-rated 40 mJ EAS withstands inductive kickback during rapid PWM shutdown, eliminating need for external clamping circuits.

Use Scenario: Isolated DC-DC stage in 11 kW OBC converting 400 V battery to 14 V auxiliary supply for vehicle electronics.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge, operating at 100–200 kHz with 150 V isolation barrier.

Use Value: 150 V VDS rating provides 2× safety margin over reflected 75 V secondary voltage, ensuring long-term reliability under transient overvoltage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP220N15F8	RDS(on),max = 20 mΩ, Qg = 16.5 nC, PG-TO220FP package	Through-hole mounting; higher RthJA (60 °C/W vs. 0.8 °C/W); no integrated thermal pad	Select when board space permits TO-220 footprint and thermal management uses external heatsink instead of PCB copper.
IXTP220N15X4	RDS(on),max = 19 mΩ, Qg = 15.2 nC, TO-220 package, 175 °C Tj rating	Higher max junction temperature but larger footprint and lower thermal efficiency than PG-TSON-8-5	Prefer for legacy designs requiring TO-220 compatibility and extended temperature operation beyond 150 °C ambient.

Compared with STP220N15F8 and IXTP220N15X4, IQE220N15NM5ATMA1 delivers superior thermal performance via its exposed-drain PG-TSON-8-5 package-enabling 3× higher power density in space-constrained SMPS-while maintaining competitive RDS(on) and gate charge for high-frequency operation.

Availability

IQE220N15NM5ATMA1 is available at Aetrix Electronics and suitable for telecom AC-DC front-ends, server PSU synchronous rectifiers, and industrial motor drive half-bridges requiring stable component supply and JEDEC-qualified industrial-grade reliability.

Supply support for IQE220N15NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The OptiMOSTM 5 product line targets high-efficiency switched-mode power supplies, delivering optimized RDS(on)-Qg trade-offs and rugged avalanche performance for synchronous rectification, DC-DC conversion, and motor control applications.

FAQ

What is the maximum recommended gate drive voltage for IQE220N15NM5ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V gate drive. Operating at 12–15 V increases RDS(on) margin and reduces switching losses, while exceeding 15 V offers diminishing returns and risks accelerated gate oxide stress over lifetime.

Can IQE220N15NM5ATMA1 be used in paralleled configurations?

Yes-the device features matched threshold voltage and RDS(on) across units, and its positive temperature coefficient above 100 °C enables inherent current sharing. For stable parallel operation, ensure symmetrical PCB layout, identical gate drive impedance (<1 Ω difference), and shared thermal interface to maintain ΔTj < 5 °C between units.

Does IQE220N15NM5ATMA1 require a gate resistor for safe operation?

A gate resistor is mandatory to control dV/dt and prevent oscillation. A 1.6 Ω external resistor is specified in the datasheet for switching characterization. Lower values (≤1 Ω) increase peak gate current and EMI; higher values (>5 Ω) slow switching and raise conduction loss-optimal value depends on drive strength and layout parasitics.

Is the body diode suitable for continuous freewheeling in hard-switched topologies?

The integrated body diode is rated for 44 A continuous forward current and 176 A pulsed current, with VSD = 0.86 V at 22 A and trr = 25–50 ns. It supports continuous freewheeling in hard-switched buck or flyback converters, though synchronous rectification remains preferred for lowest loss above 100 kHz.

IQE220N15NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-5

IQE220N15NM5ATMA1 FAQ

1.How can I place an order for IQE220N15NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE220N15NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE220N15NM5ATMA1 reliable?

The price and inventory of IQE220N15NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE220N15NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IQE220N15NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE220N15NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE220N15NM5ATMA1?

IQE220N15NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE220N15NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE220N15NM5ATMA1?

For technical support, including IQE220N15NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE220N15NM5ATMA1 requirements.

6.How does Aetrix verify that IQE220N15NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE220N15NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE220N15NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IQE220N15NM5ATMA1?

All IQE220N15NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE220N15NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE220N15NM5ATMA1 part is unused and in its original packaging.

Return procedure for IQE220N15NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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