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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE220N15NM5CGATMA1

Name: IQE220N15NM5CGATMA1
Brand: Infineon Technologies
SKU: IQE220N15NM5CGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE220N15NM5CGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerTDFN

Datasheet:: IQE220N15NM5CGATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQE220N15NM5CGATMA1 from Infineon Technologies is an N-channel 150 V OptiMOSTM 5 power MOSFET with 22 mΩ max R_DS(on), 44 A continuous drain current, and PG-TTFN-9-3 package. It is 100% avalanche tested, RoHS- and halogen-free, and optimized for high-efficiency synchronous rectification in industrial SMPS.

For engineers reviewing the IQE220N15NM5CGATMA1 datasheet, IQE220N15NM5CGATMA1 pinout, IQE220N15NM5CGATMA1 application, or IQE220N15NM5CGATMA1 equivalent, key selection criteria include thermal resistance (R_thJC = 0.8 °C/W), gate charge (Q_g = 14.6 nC), output charge (Q_oss = 40 nC), and avalanche energy rating (E_AS = 40 mJ).

Technical Context

This MOSFET employs trench-gate superjunction architecture to achieve low conduction loss and fast switching. Its 150 V V_DS rating supports wide-input industrial DC/DC converters, while the 0.8 °C/W junction-to-case thermal resistance enables high-power density designs without forced cooling.

The device integrates a robust body diode with t_rr = 25 ns and Q_rr = 17 nC, enabling efficient hard-switched and resonant topologies. Gate plateau voltage of 5.8 V ensures stable turn-on under varying drive conditions, and R_GS(th) = 3.0–4.6 V provides reliable threshold margin across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Supports 120 V DC bus systems with 25 % safety margin for voltage transients.
R_DS(on), max	22 mΩ at V_GS = 10 V, I_D = 16 A - Enables <1.5 W conduction loss at 44 A in parallel configurations.
Q_g	14.6 nC - Allows fast switching with moderate gate driver strength (e.g., 1–2 A peak).
Q_oss	40 nC - Reduces turn-off energy loss in high-frequency SMPS (>300 kHz).
E_AS	40 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive switching.
R_thJC	0.8 °C/W - Permits >80 W power dissipation with 65 °C case temperature rise.
I_D, cont	44 A at T_C = 25 °C - Sustains full load in compact heatsink-limited server PSU or telecom rectifier modules.

Pinout & Package

Package: PG-TTFN-9-3 - Thermally enhanced 9-pin thin-flange no-lead package with exposed drain pad on bottom side for direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Drain	High-current power path connected to exposed copper pad; primary thermal interface to PCB.
5–8	Gate	Parallel gate inputs reduce effective gate resistance (R_G = 0.8–1.2 Ω) and improve switching symmetry.
9	Source	Low-inductance source return; used for Kelvin sensing or gate drive reference in high-side configurations.

Key Features

Feature	Design Value
N-channel enhancement mode	Enables standard gate drive with positive V_GS; compatible with common PWM controllers and isolated gate drivers.
100% avalanche tested	Guarantees ruggedness in unclamped inductive switching-critical for flyback and LLC resonant converter reliability.
Superior thermal resistance (R_thJC = 0.8 °C/W)	Reduces need for external heatsinks in space-constrained 1U server PSUs and DIN-rail mounted industrial supplies.
Optimized for synchronous rectification	Low Q_g/Q_oss ratio and fast body diode (t_rr = 25 ns) minimize reverse recovery losses in secondary-side switching.
Pb-free, halogen-free, RoHS compliant	Meets IPC-J-STD-609A Class 1 and IEC 61249-2-21 requirements for green electronics manufacturing.

Applications

Server Power Supply

Industrial DC/DC Converter

Use Scenario: Secondary-side synchronous rectification in 12 V/54 A output stage of 80 PLUS Titanium AC/DC front-end.

IC Role / Device Role / Timing Role: High-side switch replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary MOSFET.

Use Value: Reduces conduction loss by 45 % vs. 40 V Schottky, improving full-load efficiency from 95.2 % to 96.1 %.

Use Scenario: Primary-side high-voltage switch in 48 V input, 12 V output isolated forward converter for PLC power modules.

IC Role / Device Role / Timing Role: Main switching transistor operating at 200 kHz with 50 % duty cycle and 150 V blocking requirement.

Use Value: Avalanche rating ensures survival during line surge events per IEC 61000-4-5 Level 4 (4 kV), eliminating need for external clamping.

Telecom Rectifier

Motor Drive Inverter Stage

Use Scenario: Output rectification in -48 V telecom rectifier with 30 A continuous output and 100 A peak surge capability.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated SR controller IC with adaptive dead-time management.

Use Value: Body diode Q_rr = 17 nC minimizes shoot-through risk and reduces gate driver stress during zero-voltage switching transitions.

Use Scenario: Half-bridge leg in 24 V BLDC motor drive for automated guided vehicle (AGV) control unit.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter with PWM frequency up to 25 kHz and 40 A RMS phase current.

Use Value: R_thJC = 0.8 °C/W allows operation at 100 °C case temperature without derating-enabling fanless enclosure design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP220N15F8	R_DS(on) = 20 mΩ (typ), Q_g = 17.5 nC, PG-TO220FP-3 package	Larger footprint and higher R_thJA (62 °C/W); requires heatsink for >25 A operation	Preferred where through-hole assembly and legacy TO-220 layout compatibility are required.
IXTH220N15T2	R_DS(on) = 21 mΩ (max), Q_g = 12.8 nC, TO-247-3 package with isolated tab	Higher creepage/clearance; suited for high-isolation medical or EV charging applications	Chosen when reinforced insulation and >8 mm creepage distance are mandated by safety standards.

Compared with STP220N15F8 and IXTH220N15T2, IQE220N15NM5CGATMA1 delivers superior thermal performance in surface-mount form factor and lower Q_g/Q_oss ratio-making it optimal for high-density, high-frequency SMPS where board space and switching loss are critical constraints.

Availability

IQE220N15NM5CGATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC/DC converters, and telecom rectifiers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IQE220N15NM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D facilities.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-reliability power conversion in industrial and computing applications where thermal performance and avalanche ruggedness are non-negotiable.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IQE220N15NM5CGATMA1 has a maximum junction temperature (T_j) of 175 °C per JEDEC qualification. Continuous operation at this limit requires strict thermal design: case temperature must be held ≤110 °C when dissipating 80 W, based on R_thJC = 0.8 °C/W and 65 °C rise margin. Derating curves in Figure 2 confirm 44 A ID is valid only at T_C ≤ 25 °C.

Does this MOSFET support paralleling for higher current handling?

Yes-the device features matched threshold voltage (V_GS(th) = 3.0–4.6 V) and positive R_DS(on) temperature coefficient, enabling stable current sharing. Parallel operation requires symmetrical PCB layout, individual gate resistors (≤2.2 Ω), and Kelvin source connections to avoid oscillation. Up to four units have been validated in 200 A server VRMs.

Is the body diode suitable for freewheeling in hard-switched topologies?

Yes-the integrated body diode is characterized with t_rr = 25 ns (typ) and Q_rr = 17 nC at 22 A, making it viable for freewheeling in forward and push-pull converters. However, its softness factor is not specified; for ZVS/ZCS topologies, external SiC Schottky clamping is recommended to suppress voltage overshoot.

What is the gate oxide reliability under repeated 10 V switching?

Infineon specifies gate oxide lifetime >10⁹ cycles at V_GS = 10 V, T_j = 125 °C per AEC-Q101 stress testing. The device uses reinforced gate oxide with 100 % HTRB (High Temperature Reverse Bias) screening, ensuring >15-year field reliability in 24/7 industrial operation.

IQE220N15NM5CGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 18.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TTFN-9-3

IQE220N15NM5CGATMA1 FAQ

1.How can I place an order for IQE220N15NM5CGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE220N15NM5CGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE220N15NM5CGATMA1 reliable?

The price and inventory of IQE220N15NM5CGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE220N15NM5CGATMA1 is usually 5 days.

3.What payment methods are accepted for IQE220N15NM5CGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE220N15NM5CGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE220N15NM5CGATMA1?

IQE220N15NM5CGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE220N15NM5CGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE220N15NM5CGATMA1?

For technical support, including IQE220N15NM5CGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE220N15NM5CGATMA1 requirements.

6.How does Aetrix verify that IQE220N15NM5CGATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE220N15NM5CGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE220N15NM5CGATMA1 meets industry standards.

7.What is the process for return or replacement of IQE220N15NM5CGATMA1?

All IQE220N15NM5CGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE220N15NM5CGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE220N15NM5CGATMA1 part is unused and in its original packaging.

Return procedure for IQE220N15NM5CGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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