Infineon Technologies IR2086SPBF

Overview

IR2086SPBF from Infineon Technologies is a self-oscillating full-bridge gate driver IC designed for 36–75V DC-bus converters in 48V distributed power systems. It integrates high-side and low-side drivers with ±1.2A peak output current, 500kHz per-channel switching, ±25ns pulse edge matching, and adjustable 50–200ns dead time via external CT/RT components.

For engineers reviewing the IR2086SPBF datasheet, IR2086SPBF pinout, IR2086SPBF application, or IR2086SPBF equivalent, key selection criteria include bootstrap-compatible high-side operation up to +100Vdc offset, internal soft-start with symmetrical pulse-width ramp-up, overcurrent shutdown with programmable hiccup delay (10µs–1s), and undervoltage lockout at 7.25V typical.

Technical Context

The IR2086SPBF implements a single-chip, self-timed oscillator architecture that generates complementary 50% duty-cycle outputs without requiring an external clock source. Its dual high-side level shifters support floating operation with dv/dt immunity up to ±50V/ns, and internal pulse steering ensures matched propagation delays between HO1/LO1 and HO2/LO2 channels.

Dead time is set solely by the CT capacitor value (47–1000pF) and is temperature-stable across –40°C to +125°C. Overcurrent protection uses a dedicated CS pin with 270mV typical threshold and a separate DELAY pin that accepts an external capacitor to define restart latency - independent of oscillator timing.

Key Specifications

Pinout & Package

IR2086SPBF is housed in a 16-lead narrow-body SOIC (MS-012AC) package with exposed pad not electrically connected. Pin assignments are validated per Infineon PD-60226 Rev B and match functional block diagram and lead definitions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar full-bridge gate driver applications.

Compared with IRS2005PBF and LM5005MMX/NOPB, the IR2086SPBF uniquely combines self-oscillation, programmable dead time, and full-bridge gate drive in one SOIC package - making it optimal for space-constrained, high-efficiency 48V DC-bus converters where simplicity and reliability are prioritized over external timing flexibility.

Availability

IR2086SPBF is available at Aetrix Electronics and suitable for telecom intermediate bus converters, industrial 48V power distribution systems, and server rack PSUs requiring stable component supply and long-term lifecycle support.

Supply support for IR2086SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IR2086SPBF belongs to Infineon's high-voltage gate driver product line, engineered specifically for efficient, compact full-bridge DC-DC conversion in 36–75V distributed power architectures - emphasizing integration, thermal robustness, and ease of layout.

FAQ

What is the minimum recommended VCC voltage for reliable operation?

The IR2086SPBF has an undervoltage lockout threshold of 7.25V typical. While operation may begin at 6.5V, Infineon specifies 9.5V as the minimum recommended VCC to ensure symmetrical high/low side gate drive pulses and prevent distortion during transients. Below 8.5V, asymmetry increases significantly, risking shoot-through in full-bridge configurations.

How is dead time adjusted, and what is its temperature stability?

Dead time is set exclusively by the CT capacitor value (47–1000pF) and remains stable from –40°C to +125°C, with variation under ±10% across temperature per Figure 3 in PD-60226 Rev B. No resistor adjustment is needed - RT sets only oscillator frequency. Lower CT values yield shorter dead times; e.g., 100pF gives ~70ns, while 1nF yields ~220ns at RT = 10kΩ.

Can IR2086SPBF drive GaN HEMTs, and what gate resistance is recommended?

Yes - its ±1.2A peak output current and 40ns rise time support fast-switching GaN devices. For typical 10–20nC GaN FETs, a series gate resistor of 2.2–4.7Ω is recommended to damp ringing and limit dV/dt-induced false turn-on. Layout must minimize loop inductance: place R_g adjacent to HO/LO pins and use Kelvin-source connections on GaN packages.

What happens during overcurrent, and how is restart delay calculated?

When CS pin voltage exceeds 270mV, outputs disable immediately and the internal hiccup timer starts. Restart delay is determined solely by the capacitor on the DELAY pin: t_d ≈ 10µs × C_DELAY(pF). For example, 100nF yields ~1ms delay. After delay expires, a full soft-start cycle begins - no manual reset required. Delay range is 10µs to 1s, verified across temperature.