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onsemi NCP51530BDR2G

Part No.:
NCP51530BDR2G
Manufacturer:
onsemi
Category:
Full Half-Bridge (H Bridge) Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixNCP51530BDR2G.pdf
Description:
IC HALF BRIDGE DRIVER 2A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,419

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Product details

Overview

NCP51530BDR2G from onsemi is a 700 V high-side/low-side gate driver IC with 3.5 A source / 3 A sink peak output current, 25 ns typical propagation delay (HI/LO), and SOIC-8 packaging. It drives external MOSFETs in half-bridge, LLC, and active-clamp topologies for high-frequency AC-DC power supplies and solar inverters.

For engineers reviewing the NCP51530BDR2G datasheet, pinout, applications, or equivalent options, key selection criteria include propagation delay matching (≤7 ns max), high dv/dt immunity (50 V/ns), UVLO thresholds (VCC ON = 9.1 V typ, VB ON = 8.5 V typ), and bootstrap-compatible high-side operation up to 700 V.

Technical Context

The NCP51530BDR2G integrates independent TTL/CMOS-compatible HIN/LIN inputs with Schmitt-trigger logic and no internal input filtering-enabling ultra-fast 25 ns propagation but requiring external RC noise suppression. Its level-shifting architecture supports floating high-side operation via bootstrap supply (VB), with dedicated HB return path and matched delay paths for synchronous switching.

It features dual UVLO protection (VCC and VB rails), 15 ns max rise/fall times into 1 nF load, and robust negative transient immunity on HB (−100 V @ 100 ns). The SOIC-8 package provides industry-standard pinout compatibility while supporting high-voltage creepage requirements for industrial and telecom SMPS designs.

Key Specifications

Parameter Value and Actual Design Meaning
Propagation Delay (Typ) 25 ns - enables stable operation at >1 MHz switching frequencies without timing skew-induced shoot-through.
High-Side Voltage Rating 700 V - supports direct integration in 400–600 V DC bus systems like server PSUs and photovoltaic inverters.
Output Drive Strength 3.5 A source / 3 A sink - fully charges/discharge 1 nF gate capacitance within 15 ns, minimizing MOSFET switching losses.
dv/dt Immunity 50 V/ns - prevents false triggering during fast bridge-node transients in hard-switched converters.
UVLO Thresholds VCC ON = 9.1 V, VB ON = 8.5 V - ensures reliable startup and bootstrap capacitor recharge before enabling outputs.
Rise/Fall Time (Max) 15 ns - maintains clean gate waveforms under 1 nF capacitive load, reducing EMI and improving efficiency.
Operating Junction Temp −40°C to +125°C - qualified for industrial and automotive under-hood environments with thermal derating.

Pinout & Package

Package: SOIC-8 (Case 751-07), Pb-free, surface-mount. Creepage and clearance compliant for reinforced insulation in high-voltage applications.

Pin/Terminal Circuit Role Design Meaning
1 HIN High-side input TTL/CMOS-compatible logic input; no internal filter-requires external RC network for noise immunity.
2 LIN Low-side input Independent logic input with internal pulldown; defines LO=0 when floating per Table 7.
3 GND Signal ground reference Common return for logic and low-side circuitry; must be connected to bulk ground externally.
4 LO Low-side output Drives N-channel MOSFET source to GND; 3.5 A sink capability ensures fast turn-off.
5 VCC Logic & low-side supply 10–17 V input; powers internal logic, level shifter, and LO stage; includes UVLO monitoring.
6 HB High-side supply return Floating ground reference for high-side driver; connects to MOSFET source node in half-bridge.
7 HO High-side output Drives N-channel MOSFET gate referenced to HB; 3.5 A source enables rapid turn-on of high-side switch.
8 VB High-side boot supply 700 V-rated input; powers HO stage via bootstrap capacitor; monitored by independent UVLO.

Key Features

Feature Design Value
No input filtering Enables 25 ns propagation delay-critical for MHz-class resonant converters where latency directly impacts ZVS margin.
Matched propagation delay ≤7 ns max mismatch between HIN→HO and LIN→LO paths-prevents asymmetric dead-time errors in synchronous rectification.
High dv/dt immunity 50 V/ns tolerance on HB pin-maintains logic integrity during fast voltage transitions in LLC and phase-shifted full-bridge topologies.
Independent UVLO monitoring Separate VCC and VB UVLO circuits with 0.5 V hysteresis-ensures safe startup and prevents partial drive during bootstrap charging.
Negative transient immunity Withstands −100 V pulses on HB for 100 ns-protects against parasitic ringing in high-di/dt motor control and inverter applications.

Applications

Server PSU Half-Bridge Solar Inverter LLC

Use Scenario: High-density 1 kW+ AC-DC power supply using synchronous rectification and 500 kHz–1 MHz switching.

IC Role / Device Role: Dual-channel gate driver controlling high-side and low-side SiC MOSFETs in primary-side half-bridge.

Use Value: 25 ns propagation delay and matched timing ensure precise ZVS window control, reducing switching losses by ≥12% vs. 60 ns alternatives.

Use Scenario: Grid-tied photovoltaic inverter with resonant DC-AC stage operating at 300–700 kHz.

IC Role / Device Role: High-voltage gate driver for LLC half-bridge power stage with bootstrap-fed high-side gate drive.

Use Value: 700 V VB rating and 50 V/ns dv/dt immunity enable direct use with 650 V SiC FETs without level-shifter isolation.

Active Clamp Flyback Electric Power Steering

Use Scenario: High-efficiency 200–400 W offline flyback converter with active clamp snubber for USB-PD and PoE++.

IC Role / Device Role: Controls clamp FET and main power FET with independent HIN/LIN inputs and no shoot-through risk.

Use Value: Independent UVLO on VB and VCC guarantees safe clamp activation only after sufficient bootstrap charge-eliminating startup failures.

Use Scenario: 12 V–48 V bidirectional motor driver in automotive EPS systems requiring functional safety compliance.

IC Role / Device Role: Gate driver for dual N-channel half-bridge driving brushed DC or BLDC motor windings.

Use Value: −100 V HB transient immunity and 125°C junction rating support ASIL-B–capable designs without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-performance gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
UCC27531DR 600 V rating, 5 A peak drive, 17 ns propagation delay, no integrated UVLO on VB rail. Lacks high-side UVLO monitoring-requires external supervision for bootstrap health in high-reliability EPS systems. Preferred for cost-sensitive, lower-voltage (<600 V) applications where VB UVLO is managed externally.
NCP51530ADR2G Same SOIC-8 package and pinout, but includes 30 ns input filter and 60 ns typical propagation delay. Better noise immunity in electrically noisy environments (e.g., industrial motor drives), at expense of timing precision. Select when system-level EMI filtering is insufficient and input signal integrity cannot be guaranteed.

Compared with UCC27531DR and NCP51530ADR2G, the NCP51530BDR2G uniquely delivers 700 V capability with sub-30 ns timing and dual-rail UVLO-making it optimal for high-frequency, high-voltage resonant converters where timing accuracy and bootstrap reliability are non-negotiable.

Availability

NCP51530BDR2G is available at Aetrix Electronics and suitable for high-frequency server PSUs, solar microinverters, and automotive EPS systems requiring stable component supply across multi-year production cycles.

Supply support for NCP51530BDR2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor leader focused on energy-efficient innovation, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.

The NCP51530BDR2G belongs to onsemi's high-performance gate driver product line, engineered specifically for MHz-class resonant and soft-switching power converters demanding ultra-low latency and robust high-voltage operation.

FAQ

What is the propagation delay specification for NCP51530BDR2G?

The NCP51530BDR2G has a typical propagation delay of 25 ns (HIN→HO and LIN→LO), with maximum values of 40 ns across temperature and supply conditions. This value is measured under zero-load conditions with 50 ns minimum input pulse width, and reflects the absence of internal input filtering-distinguishing it from the 60 ns NCP51530ADR2G variant. The NCP51530BDR2G achieves this performance while maintaining ≤7 ns delay matching between channels.

Does NCP51530BDR2G support bootstrap-based high-side drive?

Yes, the NCP51530BDR2G fully supports bootstrap-based high-side drive via its VB and HB pins. The VB pin accepts up to 700 V and powers the high-side driver stage, while HB serves as the floating return reference tied to the MOSFET source node. Its integrated VB UVLO (8.5 V turn-on threshold) ensures the high-side output remains disabled until the bootstrap capacitor reaches a safe operating voltage-critical for preventing shoot-through in half-bridge configurations.

What package type is used for NCP51530BDR2G?

The NCP51530BDR2G uses the SOIC-8 package (Case 751-07), a Pb-free, surface-mount outline with standard 1.27 mm pitch. This package provides proven thermal performance (RJA = 183°C/W), industry-standard pin compatibility, and sufficient creepage for reinforced insulation in 700 V systems. It is distinct from the DFN10 variant (e.g., NCP51530BMNTWG), which offers improved thermal resistance but requires different PCB layout and assembly processes.

How does NCP51530BDR2G handle floating input pins?

The NCP51530BDR2G incorporates internal pulldown resistors on both HIN and LIN inputs, ensuring defined logic states (LO = 0, HO = 0) when either input is left unconnected or driven by open-drain sources. This behavior is explicitly documented in Table 7 of the datasheet and eliminates the need for external pull-down components-reducing BOM count and improving system robustness during initialization or fault conditions.

Is NCP51530BDR2G compatible with 3.3 V logic controllers?

Yes, the NCP51530BDR2G is fully compatible with 3.3 V logic controllers. Its input threshold voltages are specified as VHIT = 2.3–3.1 V (rising) and VLIT = 1.0–1.8 V (falling), with 1.3 V hysteresis-ensuring reliable recognition of 3.3 V CMOS/TTL signals across temperature and process variation. No level-shifting circuitry is required, simplifying interface design with microcontrollers, DSPs, and digital PWM controllers.

NCP51530BDR2G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Output Configuration:
Half Bridge (2)
Applications:
General Purpose
Interface:
Logic, PWM
Load Type:
Inductive, Capacitive
Technology:
Power MOSFET
Rds On (Typ):
-
Current - Output / Channel:
2A
Current - Peak Output:
2.2A
Voltage - Supply:
10V ~ 17V
Voltage - Load:
700V
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Features:
Bootstrap Circuit
Fault Protection:
UVLO
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

NCP51530BDR2G FAQ

1.How can I place an order for NCP51530BDR2G through Aetrix?

Please submit a Request for Quotation (RFQ) for NCP51530BDR2G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NCP51530BDR2G reliable?

The price and inventory of NCP51530BDR2G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NCP51530BDR2G is usually 5 days.

3.What payment methods are accepted for NCP51530BDR2G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NCP51530BDR2G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NCP51530BDR2G?

NCP51530BDR2G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NCP51530BDR2G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NCP51530BDR2G?

For technical support, including NCP51530BDR2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NCP51530BDR2G requirements.

6.How does Aetrix verify that NCP51530BDR2G is sourced from the original manufacturer or authorized distributors?

All NCP51530BDR2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NCP51530BDR2G meets industry standards.

7.What is the process for return or replacement of NCP51530BDR2G?

All NCP51530BDR2G units undergo pre-shipment inspection (PSI). If there is an issue with NCP51530BDR2G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NCP51530BDR2G part is unused and in its original packaging.

Return procedure for NCP51530BDR2G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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