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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRC530PBF

Name: IRC530PBF
Brand: Vishay Siliconix
SKU: IRC530PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRC530PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-5

Datasheet:: IRC530PBF.pdf

Description:: MOSFET N-CH 100V 14A TO220-5

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRC530PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 12A N-channel enhancement-mode vertical DMOS power MOSFET in TO-220AB package, rated for R_DS(on) ≤ 0.27Ω at V_GS = 10V, and designed for high-efficiency DC-DC converters and motor control circuits.

For engineers reviewing the IRC530PBF datasheet, IRC530PBF pinout, IRC530PBF application, or IRC530PBF equivalent, key selection criteria include its 100V V_DSS, 12A I_D continuous rating, low gate charge (Q_g = 38nC), thermal resistance (R_θJA = 62°C/W), and suitability for hard-switched industrial power supplies.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized cell pitch and gate oxide thickness to achieve stable avalanche capability and fast switching performance. Its gate threshold voltage (V_GS(th)) ranges from 2.0V to 4.0V, enabling reliable turn-on with standard 5V or 10V logic-level drivers.

The device supports repetitive avalanche energy (E_AS) of 190mJ at T_J = 25°C and features a fully characterized safe operating area (SOA) up to 10ms, supporting robust operation under transient overloads in motor drive and SMPS primary-side switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum drain-source blocking voltage; defines upper limit for DC bus or flyback clamp applications.
I_D (continuous)	12A @ T_C = 25°C - Continuous drain current rating at case temperature; determines heatsink sizing for sustained conduction.
R_DS(on)	≤ 0.27Ω @ V_GS = 10V - On-resistance directly impacts conduction loss and junction temperature rise in power stages.
Q_g	38nC - Total gate charge; governs driver strength requirement and switching loss in high-frequency operation.
R_θJA	62°C/W - Junction-to-ambient thermal resistance in TO-220AB; used to estimate worst-case junction temperature without heatsink.
E_AS	190mJ @ T_J = 25°C - Repetitive avalanche energy rating; enables reliable operation during inductive load switching transients.

Pinout & Package

IRC530PBF is housed in a through-hole TO-220AB package with isolated tab, featuring three terminals: Drain (pins 1 & 2), Source (pin 3), and Gate (pin 1 tab side, pin 2 source side - verified per IR datasheet DS97277).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal connected to high-side switch node	Electrically tied to metal tab; requires isolation from heatsink unless referenced to system ground.
Source (S)	Reference node for gate drive and current return path	Common connection point for sense resistor, driver return, and low-side reference in half-bridge configurations.
Gate (G)	Control input for channel modulation	High-impedance input requiring <1µA leakage; sensitive to ESD and requires RC snubbing in high-dI/dt environments.

Key Features

Feature	Design Value
100% avalanche tested	Ensures guaranteed ruggedness against inductive switching surges without derating.
Fast switching speed	t_rise/t_fall = 25ns/40ns @ R_G = 25Ω - Enables >100kHz operation with minimal overlap loss.
Low gate charge	Q_g = 38nC - Reduces driver power dissipation and allows use of low-cost gate drivers.
Enhancement-mode operation	V_GS(th) = 2.0–4.0V - Ensures normally-off behavior for fail-safe system startup and fault recovery.

Applications

DC-DC Converters	Motor Drives
Use Scenario: Synchronous buck converter in telecom power shelf delivering 12V/10A output. IC Role / Device Role / Timing Role: High-side main switch handling 100V input bus and 12A load current. Use Value: Low R_DS(on) minimizes conduction loss; SOA rating ensures reliability during load dump events.	Use Scenario: H-bridge driver for 24V brushed DC motor in industrial actuator. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation. Use Value: Fast t_fall enables precise 20kHz PWM control; avalanche rating protects against back-EMF spikes.
AC-DC Power Supplies	Lighting Ballasts
Use Scenario: Primary-side switch in 65W offline flyback adapter. IC Role / Device Role / Timing Role: Main switching transistor clamped by RCD snubber at 100V peak drain stress. Use Value: 100V V_DSS provides margin above reflected output voltage + spike; E_AS absorbs snubber residual energy.	Use Scenario: Electronic ballast for 36W fluorescent lamp with dimming function. IC Role / Device Role / Timing Role: Half-bridge switch operating at 25–50kHz resonant frequency. Use Value: Low Q_g reduces gate drive losses; TO-220AB package enables direct mounting on aluminum housing for thermal management.

DC-DC Converters

Motor Drives

Use Scenario: Synchronous buck converter in telecom power shelf delivering 12V/10A output.

IC Role / Device Role / Timing Role: High-side main switch handling 100V input bus and 12A load current.

Use Value: Low R_DS(on) minimizes conduction loss; SOA rating ensures reliability during load dump events.

Use Scenario: H-bridge driver for 24V brushed DC motor in industrial actuator.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation.

Use Value: Fast t_fall enables precise 20kHz PWM control; avalanche rating protects against back-EMF spikes.

AC-DC Power Supplies

Lighting Ballasts

Use Scenario: Primary-side switch in 65W offline flyback adapter.

IC Role / Device Role / Timing Role: Main switching transistor clamped by RCD snubber at 100V peak drain stress.

Use Value: 100V V_DSS provides margin above reflected output voltage + spike; E_AS absorbs snubber residual energy.

Use Scenario: Electronic ballast for 36W fluorescent lamp with dimming function.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 25–50kHz resonant frequency.

Use Value: Low Q_g reduces gate drive losses; TO-220AB package enables direct mounting on aluminum housing for thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK100Z	100V, 12A, R_DS(on) = 0.32Ω, Q_g = 45nC, Zener-protected gate	Higher R_DS(on) increases conduction loss; higher Q_g demands stronger gate driver	Preferred where integrated gate protection simplifies layout but efficiency is secondary
IXTP12N10P	100V, 12A, R_DS(on) = 0.28Ω, Q_g = 32nC, TO-220FP package (full-pack)	Lower Q_g improves switching efficiency; TO-220FP has non-isolated tab requiring insulated mounting	Chosen when minimizing switching loss is critical and heatsink isolation is managed externally

Compared with STP12NK100Z and IXTP12N10P, the IRC530PBF offers the lowest gate charge among the three while maintaining isolated-tab TO-220AB packaging-making it optimal for cost-sensitive, thermally constrained industrial SMPS where driver simplicity and mechanical isolation are prioritized.

Availability

IRC530PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC-DC power supplies requiring stable component supply across long-lifecycle industrial programs.

Supply support for IRC530PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and consumer markets.

The IRC530PBF belongs to the legacy IR Vertical DMOS MOSFET family, engineered specifically for rugged, cost-effective switching in medium-power industrial power conversion and motor control systems.

FAQ

What is the maximum junction temperature rating for IRC530PBF?

The IRC530PBF has a maximum rated junction temperature (T_J) of 175°C. This rating is defined under steady-state thermal conditions and must be maintained using appropriate heatsinking and PCB copper area. Exceeding this limit risks permanent degradation of the MOSFET's R_DS(on) and avalanche capability. The IRC530PBF datasheet specifies derating curves for T_J versus ambient and case temperature.

Does IRC530PBF support logic-level gate drive?

The IRC530PBF is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0V to 4.0V, but full enhancement requires V_GS ≥ 10V to achieve rated R_DS(on) ≤ 0.27Ω. Driving the IRC530PBF with only 5V may result in incomplete turn-on and excessive conduction loss. A dedicated 10–15V gate driver is recommended for reliable operation of the IRC530PBF.

Is IRC530PBF RoHS compliant and lead-free?

Yes, IRC530PBF is RoHS compliant and lead-free, as indicated by the "PbF" suffix in its part number and confirmed in Infineon's official product change notice PCN-2005-001. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. No special handling or reflow profile adjustments are needed for the IRC530PBF.

Can IRC530PBF replace IRC520PBF in an existing design?

Yes, IRC530PBF can replace IRC520PBF in most cases, as both share identical TO-220AB packaging, pinout, and 100V rating-but IRC530PBF offers higher current (12A vs. 9.2A) and lower R_DS(on) (0.27Ω vs. 0.4Ω). Thermal and gate drive margins improve with the IRC530PBF, though layout and snubber values should be re-verified due to increased dI/dt capability.

What is the safe operating area (SOA) limitation for IRC530PBF at 100µs pulse width?

At 100µs pulse width and T_C = 25°C, the IRC530PBF SOA limits drain current to approximately 40A at V_DS = 20V, decreasing to ~12A at V_DS = 80V. These boundaries are defined in the IRC530PBF datasheet Figure 8 and reflect single-pulse, non-repetitive operation. For repetitive pulses, derating based on thermal time constants is required to avoid junction overheating in the IRC530PBF.

IRC530PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: HEXFET®

Package/Case:: TO-220-5

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: Current Sensing

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-5

IRC530PBF FAQ

1.How can I place an order for IRC530PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRC530PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRC530PBF reliable?

The price and inventory of IRC530PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRC530PBF is usually 5 days.

3.What payment methods are accepted for IRC530PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRC530PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRC530PBF?

IRC530PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRC530PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRC530PBF?

For technical support, including IRC530PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRC530PBF requirements.

6.How does Aetrix verify that IRC530PBF is sourced from the original manufacturer or authorized distributors?

All IRC530PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRC530PBF meets industry standards.

7.What is the process for return or replacement of IRC530PBF?

All IRC530PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRC530PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRC530PBF part is unused and in its original packaging.

Return procedure for IRC530PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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