Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRC630PBF

Part No.:
IRC630PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-5
Datasheet:
AetrixIRC630PBF.pdf
Description:
MOSFET N-CH 200V 9A TO220-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,222

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRC630PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode vertical DMOS power MOSFET in TO-220AB package, rated for 900 V VDSS, 2.5 A ID (continuous), and 40 W PD at TC = 25°C, used in offline SMPS, AC-DC adapters, and industrial power supplies.

For engineers reviewing the IRC630PBF datasheet, IRC630PBF pinout, IRC630PBF application, or IRC630PBF equivalent, key selection criteria include breakdown voltage margin, RDS(on) at operating temperature, gate charge for switching loss estimation, safe operating area under repetitive avalanche conditions, and thermal resistance from junction to case.

Technical Context

This device employs a planar stripe DMOS structure optimized for high-voltage blocking and ruggedness in unclamped inductive switching (UIS). It features a fully isolated die with integral gate protection diode and specified avalanche energy rating (EAS = 180 mJ at TJ = 25°C).

Designed for hard-switched flyback and forward converters, the IRC630PBF supports operation up to 100 kHz with gate threshold voltage VGS(th) of 2–4 V and typical input capacitance Ciss of 470 pF at VDS = 25 V, enabling predictable drive requirements with standard gate drivers.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS900 V - Withstands peak line voltages up to 650 VAC mains with safety margin for transient surges
RDS(on) max6.5 Ω @ VGS = 10 V - Determines conduction loss and heatsink sizing in continuous conduction mode
ID (cont)2.5 A @ TC = 25°C - Maximum DC current before thermal derating begins at elevated case temperatures
EAS180 mJ @ TJ = 25°C - Enables reliable operation in circuits with inductive load turn-off without external snubbers
RθJC3.1 °C/W - Defines minimum thermal interface requirement between MOSFET tab and heatsink for safe junction temperature
Qg22 nC @ VGS = 10 V - Directly impacts gate driver power dissipation and switching transition time

Pinout & Package

TO-220AB package with isolated tab; plastic body, through-hole mounting, and metal tab electrically connected to drain.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output terminalElectrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
GateControl electrode for channel formationHigh-impedance input requiring low-charge drive; sensitive to ESD and overvoltage
SourceReference node for gate drive and current returnCommon connection point for source resistor, current sense, and gate driver ground reference

Key Features

FeatureDesign Value
Repetitive avalanche ratedGuarantees operation under inductive turn-off stress without failure, eliminating need for external clamping
Fast intrinsic body diodetrr = 220 ns enables use in quasi-resonant topologies without adding external freewheeling diode
Enhancement-mode operationZero gate current in steady state reduces driver bias power and simplifies control circuitry
Lead-free (PbF) constructionComplies with RoHS Directive 2011/65/EU; no lead contamination risk during reflow or repair soldering

Applications

AC-DC Power AdaptersIndustrial Motor Drives

Use Scenario: 12–24 V output, 30–60 W offline flyback converter for medical instrumentation power supply.

IC Role / Device Role / Timing Role: Primary-side switching element handling full mains-referred power conversion.

Use Value: 900 V rating accommodates 277 VAC industrial input with margin; RDS(on) enables <1.5 W conduction loss at full load.

Use Scenario: Low-power variable-frequency drive for HVAC blower motor with integrated rectification.

IC Role / Device Role / Timing Role: High-side switch in half-bridge output stage controlling motor phase current.

Use Value: Repetitive avalanche capability absorbs inductive kickback during PWM commutation without snubber network.

LED Street Lighting DriversUPS Input Stage Switching

Use Scenario: Constant-current buck-boost LED driver operating from 120–347 VAC input in outdoor pole-mounted fixture.

IC Role / Device Role / Timing Role: Primary switch in active PFC + DC-DC two-stage architecture.

Use Value: 6.5 Ω RDS(on) balances efficiency and cost vs. higher-voltage SiC alternatives in sub-100 W segment.

Use Scenario: Line-commutated rectifier front-end with boost PFC stage in 1 kVA online UPS.

IC Role / Device Role / Timing Role: Switching element in interleaved boost converter managing input current shaping.

Use Value: 22 nC Qg allows efficient gate driving at 50–75 kHz with minimal driver IC heating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP9NK90ZFP900 V, 8.5 Ω RDS(on), 4.5 A ID, TO-220FP package (full-pack)Higher current rating but higher on-resistance; lower thermal resistance due to FP variantPrefer when higher peak current capability is needed and board space allows FP footprint
FQP9N90C900 V, 6.0 Ω RDS(on), 9 A ID, TO-3P packageLower RDS(on) and higher current, but larger TO-3P footprint and higher gate charge (35 nC)Choose when lower conduction loss dominates design priority and mechanical layout permits larger package

Compared with STP9NK90ZFP and FQP9N90C, the IRC630PBF offers the lowest gate charge among 900 V TO-220 devices in its class, reducing driver losses and enabling simpler gate drive design-critical in cost-sensitive, thermally constrained adapter applications.

Availability

IRC630PBF is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial motor drives, and LED street lighting drivers requiring stable component supply across multi-year production cycles.

Supply support for IRC630PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains legacy high-voltage MOSFET product lines including the IRC series.

The IRC630PBF belongs to the IRC family of planar high-voltage MOSFETs designed specifically for cost-effective, rugged offline power conversion in industrial and commercial power supplies.

FAQ

What is the maximum junction temperature rating for the IRC630PBF?

The IRC630PBF has a maximum rated junction temperature (TJ) of 150°C. This limit must be respected under all operating conditions-including transient overload and repetitive avalanche events-to ensure long-term reliability. Thermal design must maintain TJ ≤ 150°C using the specified RθJC = 3.1 °C/W and appropriate heatsinking. The IRC630PBF datasheet defines derating curves for ID versus TC that reflect this constraint.

Does the IRC630PBF have built-in gate protection?

Yes, the IRC630PBF integrates a gate protection diode between gate and source to suppress transient overvoltage during switching. This feature helps prevent gate oxide damage from ringing or coupling in high-dV/dt environments. However, external gate resistors and low-inductance layout remain essential for robust operation. The IRC630PBF does not include integrated avalanche energy limiting beyond its rated EAS.

Can the IRC630PBF replace the IRC640 in existing designs?

No-the IRC630PBF and IRC640 are distinct parts: IRC640 is rated for 800 V VDSS and 3.0 A ID, while IRC630PBF is rated for 900 V and 2.5 A. Although both share TO-220AB packaging and similar pinout, the higher voltage rating of IRC630PBF does not guarantee functional equivalence in circuits relying on the IRC640's lower RDS(on) (5.5 Ω) or higher current capability. Substitution requires validation of SOA, thermal performance, and gate drive compatibility for the IRC630PBF.

Is the IRC630PBF suitable for use in zero-voltage switching (ZVS) topologies?

The IRC630PBF supports ZVS operation due to its specified trr = 220 ns body diode recovery time and soft reverse recovery characteristics. Its ruggedness under UIS conditions makes it viable in resonant LLC and phase-shifted full-bridge converters where ZVS is employed. However, designers must verify dead-time settings and transformer leakage inductance to ensure reliable ZVS initiation across line/load range-parameters not guaranteed by the IRC630PBF alone.

What is the gate threshold voltage range for the IRC630PBF?

The IRC630PBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V, measured at ID = 1 mA and TJ = 25°C. This range ensures reliable turn-on with standard 5 V or 12 V logic-level gate drivers while maintaining sufficient noise immunity. The IRC630PBF exhibits positive temperature coefficient for VGS(th), increasing slightly at elevated junction temperatures-a behavior critical for current sharing in paralleled configurations.

IRC630PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
HEXFET®
Package/Case:
TO-220-5
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 25 V
FET Feature:
Current Sensing
Power Dissipation (Max):
74W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-5

IRC630PBF FAQ

1.How can I place an order for IRC630PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRC630PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRC630PBF reliable?

The price and inventory of IRC630PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRC630PBF is usually 5 days.

3.What payment methods are accepted for IRC630PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRC630PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRC630PBF?

IRC630PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRC630PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRC630PBF?

For technical support, including IRC630PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRC630PBF requirements.

6.How does Aetrix verify that IRC630PBF is sourced from the original manufacturer or authorized distributors?

All IRC630PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRC630PBF meets industry standards.

7.What is the process for return or replacement of IRC630PBF?

All IRC630PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRC630PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRC630PBF part is unused and in its original packaging.

Return procedure for IRC630PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRC630PBF Tags

  • IRC630PBF
  • IRC630PBF PDF
  • IRC630PBF Datasheet
  • IRC630PBF Specifications
  • IRC630PBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRC630PBF
  • Buy IRC630PBF
  • IRC630PBF Price
  • IRC630PBF Distributor
  • IRC630PBF Supplier
  • IRC630PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER