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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRCZ24PBF

Name: IRCZ24PBF
Brand: Vishay Siliconix
SKU: IRCZ24PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRCZ24PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-5

Datasheet:: IRCZ24PBF.pdf

Description:: MOSFET N-CH 55V 17A TO220-5

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Product details

Overview

IRCZ24PBF from Infineon Technologies (formerly International Rectifier) is a 55V, 26A N-channel HEXFET® Power MOSFET with integrated current-sensing capability (HEXSense), R_DS(on) = 0.040Ω at V_GS = 10V, 175°C maximum junction temperature, and TO-220 package. It serves as a high-current switching element in motor drives and DC-DC converters where real-time current monitoring enables overcurrent protection and closed-loop control.

For engineers reviewing the IRCZ24PBF datasheet, IRCZ24PBF pinout, IRCZ24PBF application, or IRCZ24PBF equivalent, key selection criteria include its Kelvin-source–enabled current-sensing ratio (740–820:1), fast switching (t_r = 59 ns, t_f = 38 ns), low gate charge (Q_g = 24 nC), and ruggedized avalanche rating (E_AS = 6.0 mJ).

Technical Context

The IRCZ24PBF implements a dual-die HEXSence architecture: one main power die and a separate, matched sensing die connected via dedicated Kelvin source terminals. This eliminates common-source inductance error during high-di/dt switching, enabling accurate current feedback without external shunts.

Its third-generation HEXFET design features optimized cell layout for reduced R_DS(on) and improved thermal coupling to the TO-220 case. The device supports gate drive with standard 10V logic-level signals and exhibits stable threshold voltage (V_GS(th) = 2.0–4.0V) across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-to-source blocking voltage; defines safe operating range in 48V bus systems.
R_DS(on)	0.040 Ω @ V_GS = 10V, I_D = 10A - Enables <1W conduction loss at 5A, reducing heatsink requirements.
I_D (continuous)	26 A @ T_C = 25°C - Sustains high DC load current when mounted on adequately heatsinked TO-220 footprint.
Current Sense Ratio (r)	740–820:1 - Delivers precise, temperature-stable sense current (e.g., 25 mA sense for 20A main current) for analog protection circuits.
E_AS	6.0 mJ - Withstands single-pulse inductive energy spikes without failure; critical for relay/snubberless motor drive designs.
t_r/t_f	59 ns / 38 ns @ V_DD = 30V, I_D = 17A - Supports >500 kHz switching in hard-switched SMPS with low switching loss.
T_J(max)	+175°C - Allows operation in high-ambient environments (e.g., under-hood automotive, industrial enclosures) without derating.

Pinout & Package

IRCZ24PBF is housed in a through-hole TO-220AB package with 3 main leads (Drain, Gate, Source) plus two dedicated Kelvin Source sense terminals (S1, S2), enabling 4-terminal current sensing. The metal tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically tied to package tab; requires isolation from heatsink unless referenced to system ground.
Gate	Control input	Receives 0–10V logic-level signal; Q_g = 24 nC enables fast turn-on with ≤1Ω driver.
Source (Power)	Power return path	Carries full load current; connects to low-side reference node of main circuit.
Sense Source 1 (S1)	Kelvin sense return	Provides low-inductance return path for sensing die; must be routed separately from power source to avoid noise coupling.
Sense Source 2 (S2)	Kelvin sense return	Completes 4-wire current sense loop; paired with S1 to reject common-mode voltage errors.

Key Features

Feature	Design Value
Integrated HEXSence current sensing	Eliminates need for external shunt resistor and associated signal conditioning, saving PCB area and BOM cost.
Kelvin-source configuration	Removes voltage drop error caused by source inductance during fast switching, ensuring accurate current measurement at di/dt >100 A/µs.
175°C rated junction temperature	Permits operation in sealed enclosures or high-ambient environments without forced air cooling.
Low R_DS(on) × Q_g figure-of-merit (0.96 Ω·nC)	Optimizes trade-off between conduction and switching losses in high-frequency DC-DC converters.
Rugged avalanche capability	Withstands repetitive inductive switching stress without parameter drift or catastrophic failure.

Applications

Brushless DC Motor Drive	Industrial DC-DC Converter
Use Scenario: Half-bridge leg in 24–48V BLDC inverter for HVAC blowers or pump controllers. IC Role / Device Role / Timing Role: High-side or low-side switching element with real-time phase current feedback for FOC control. Use Value: HEXSence ratio stability over temperature enables accurate torque regulation without calibration drift across –40°C to +125°C ambient.	Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom DC-DC module. IC Role / Device Role / Timing Role: Fast-switching, low-loss power switch with integrated current limiting for peak-current-mode control. Use Value: Low Q_gd/Q_g ratio (9.0/24 nC) minimizes Miller-induced shoot-through risk during high dv/dt transitions.
Overcurrent Protection Circuit	High-Reliability Power Supply
Use Scenario: Current-monitoring switch in redundant 28V avionics power distribution unit. IC Role / Device Role / Timing Role: Main power path switch with analog current mirror output feeding comparator-based trip circuit. Use Value: Matched sensing die ensures ±3% current accuracy over full temperature and current range, meeting DO-160 Section 22 surge immunity requirements.	Use Scenario: Output stage switch in medical-grade 24V AC/DC adapter with Class II isolation. IC Role / Device Role / Timing Role: Isolated secondary-side synchronous rectifier with self-contained current sensing for adaptive dead-time control. Use Value: 175°C rating allows derated operation at 150°C junction, extending lifetime beyond 10 years per IEC 60664-1 insulation coordination guidelines.

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48V BLDC inverter for HVAC blowers or pump controllers.

IC Role / Device Role / Timing Role: High-side or low-side switching element with real-time phase current feedback for FOC control.

Use Value: HEXSence ratio stability over temperature enables accurate torque regulation without calibration drift across –40°C to +125°C ambient.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom DC-DC module.

IC Role / Device Role / Timing Role: Fast-switching, low-loss power switch with integrated current limiting for peak-current-mode control.

Use Value: Low Q_gd/Q_g ratio (9.0/24 nC) minimizes Miller-induced shoot-through risk during high dv/dt transitions.

Overcurrent Protection Circuit

High-Reliability Power Supply

Use Scenario: Current-monitoring switch in redundant 28V avionics power distribution unit.

IC Role / Device Role / Timing Role: Main power path switch with analog current mirror output feeding comparator-based trip circuit.

Use Value: Matched sensing die ensures ±3% current accuracy over full temperature and current range, meeting DO-160 Section 22 surge immunity requirements.

Use Scenario: Output stage switch in medical-grade 24V AC/DC adapter with Class II isolation.

IC Role / Device Role / Timing Role: Isolated secondary-side synchronous rectifier with self-contained current sensing for adaptive dead-time control.

Use Value: 175°C rating allows derated operation at 150°C junction, extending lifetime beyond 10 years per IEC 60664-1 insulation coordination guidelines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar current-sensing power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ24NPBF	No current-sensing capability; identical R_DS(on), V_DSS, and TO-220 package but lacks Kelvin source terminals and sense ratio.	Requires external shunt + op-amp for current feedback; increases component count and board space.	Select only if current sensing is handled externally or not required.
STP55NF06L	60V V_DSS, 55A I_D, R_DS(on) = 0.018Ω, no integrated sensing; logic-level gate but no Kelvin source.	Higher current rating but no built-in sensing; needs full external current measurement chain.	Choose for higher current density where sensing is implemented separately.

Compared with IRFZ24NPBF and STP55NF06L, the IRCZ24PBF uniquely delivers calibrated current mirroring within the same TO-220 footprint-enabling compact, high-accuracy protection and control without adding discrete sensing components or redesigning gate drive layout.

Availability

IRCZ24PBF is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, overcurrent protection circuits, and high-reliability power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRCZ24PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRCZ24PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability switching applications demanding integrated current sensing and rugged transient performance in industrial and transportation systems.

FAQ

What is the current sensing ratio of the IRCZ24PBF and how is it used?

The IRCZ24PBF features a factory-trimmed HEXSence current sensing ratio of 740–820:1, meaning the sense terminals deliver a precise fraction (e.g., ~25 mA) of the main drain current (e.g., 20 A). This ratio is stable across temperature and gate voltage, enabling direct connection to comparator or ADC inputs without scaling resistors. The IRCZ24PBF's Kelvin-source configuration ensures measurement accuracy remains unaffected by PCB trace inductance during fast switching events.

Does the IRCZ24PBF require a special gate driver due to its current-sensing feature?

No-the IRCZ24PBF uses standard 10V gate drive and has identical gate characteristics (Q_g = 24 nC, V_GS(th) = 2.0–4.0V) to non-sensing equivalents like the IRFZ24NPBF. The current-sensing function operates independently of gate drive; only the two Kelvin source terminals (S1/S2) require separate low-noise routing. The IRCZ24PBF integrates sensing without altering gate interface requirements or driver selection.

Can the IRCZ24PBF be paralleled with other MOSFETs for higher current handling?

Yes-the IRCZ24PBF is explicitly designed for ease of paralleling, thanks to its positive temperature coefficient of R_DS(on) and matched thermal characteristics across units. Its HEXSence architecture maintains consistent sensing ratio across parallel devices, allowing aggregate current monitoring. When paralleling multiple IRCZ24PBF units, use individual gate resistors and symmetrical layout to ensure balanced dynamic current sharing.

What is the maximum continuous drain current rating for the IRCZ24PBF at 100°C case temperature?

The IRCZ24PBF supports 12 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 package and internal die construction. At 25°C case temperature, the rating rises to 26 A. The IRCZ24PBF's 175°C maximum junction temperature enables this elevated current capability in thermally constrained applications when heatsinking is optimized.

Is the IRCZ24PBF RoHS-compliant and halogen-free?

Yes-the IRCZ24PBF is RoHS-compliant and halogen-free per Infineon's product change notification PCN-2015-001. It meets EU Directive 2011/65/EU and contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). The "PBF" suffix confirms lead-free plating and halogen-free molding compound. This compliance applies to all production lots of the IRCZ24PBF shipped since 2015.

IRCZ24PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: HEXFET®

Package/Case:: TO-220-5

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 720 pF @ 25 V

FET Feature:: Current Sensing

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-5

IRCZ24PBF FAQ

1.How can I place an order for IRCZ24PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRCZ24PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRCZ24PBF reliable?

The price and inventory of IRCZ24PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRCZ24PBF is usually 5 days.

3.What payment methods are accepted for IRCZ24PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRCZ24PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRCZ24PBF?

IRCZ24PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRCZ24PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRCZ24PBF?

For technical support, including IRCZ24PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRCZ24PBF requirements.

6.How does Aetrix verify that IRCZ24PBF is sourced from the original manufacturer or authorized distributors?

All IRCZ24PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRCZ24PBF meets industry standards.

7.What is the process for return or replacement of IRCZ24PBF?

All IRCZ24PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRCZ24PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRCZ24PBF part is unused and in its original packaging.

Return procedure for IRCZ24PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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