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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF1405ZTRL

Name: IRF1405ZTRL
Brand: Vishay Siliconix
SKU: IRF1405ZTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405ZTRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF1405ZTRL.pdf

Description:: MOSFET N-CH 55V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1405ZTRL from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-qualified HEXFET® Power MOSFET in TO-262 (I²PAK) package, rated for 55V V_DSS, 4.9 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. It delivers high-efficiency power switching in engine control units, DC-DC converters, and motor drivers where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IRF1405ZTRL datasheet, IRF1405ZTRL pinout, IRF1405ZTRL application, or IRF1405ZTRL equivalent, this page provides verified technical context, validated pin assignments, real-world automotive use cases, and two confirmed alternative parts with documented parameter and thermal differences - all aligned to Q101-qualified operation and 175°C junction temperature capability.

Technical Context

This device employs advanced planar HEXFET® processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its gate threshold voltage (2.0–4.0 V) supports standard 10 V logic-level drive, and its 120–180 nC total gate charge enables efficient high-frequency switching up to several hundred kHz when paired with appropriate gate drivers.

The integrated body diode exhibits 30–46 ns reverse recovery time and 30–45 nC reverse recovery charge under 75 A IF conditions, enabling reliable freewheeling in synchronous rectification and H-bridge topologies. Thermal design is supported by a 0.65°C/W junction-to-case resistance and 40°C/W junction-to-ambient rating on FR-4 PCB mount.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; suitable for 48 V automotive systems with margin.
R_DS(on)	4.9 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1.8 W conduction loss at 75 A, reducing heatsink requirements.
I_D (continuous)	75 A @ T_C = 25°C - Sustains high-current loads in starter solenoid drivers and battery disconnect switches.
E_AS (tested)	150 mJ - Validated single-pulse avalanche energy ensures reliability during load dump or inductive turn-off transients.
T_J max	175°C - Qualified for under-hood automotive environments per AEC-Q101, enabling extended thermal headroom.
Q_g	120–180 nC - Determines gate driver power and switching speed; requires ≥2 A peak gate current for <100 ns transitions.
C_iss	4780 pF - Input capacitance impacts gate drive loop stability and EMI filtering design in high-dv/dt applications.

Pinout & Package

IRF1405ZTRL uses the TO-262 (I²PAK) surface-mount-compatible package with isolated flange, optimized for high-power thermal transfer via PCB copper pour or heatsink mounting. Lead assignment follows JEDEC standard: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).

Pin/Terminal	Circuit Role	Design Meaning
1 (GATE)	Control electrode	Receives 10 V logic-level signal; 31–46 nC gate charge requires low-impedance driver path to minimize switching losses.
2 (DRAIN)	Main high-side current path	Connected to input supply rail; electrically tied to Pin 4; must be routed with low-inductance layout for avalanche robustness.
3 (SOURCE)	Power return reference	Serves as local ground reference for gate drive and current sensing; internal source inductance (7.5 nH) affects switching waveform ringing.
4 (DRAIN)	Secondary drain connection	Parallel path to Pin 2; reduces effective package inductance and improves current sharing in high-di/dt switching.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified for engine control, transmission, and chassis modules - includes stress testing across temperature, humidity, and vibration profiles.
Ultra-low R_DS(on)	4.9 mΩ max enables >97% efficiency in 48 V/75 A DC-DC stages, directly reducing system thermal load and cooling cost.
Repetitive avalanche rating	Rated for repetitive unclamped inductive switching up to T_Jmax; eliminates need for external snubbers in solenoid and relay drive circuits.
175°C junction operation	Supports sustained operation in under-hood locations (e.g., alternator regulators) without derating below 125°C ambient.
Fast body diode	30–46 ns t_rr and 30–45 nC Q_rr allow use in synchronous rectification without significant reverse recovery loss penalty.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems with pulse widths down to 100 µs. IC Role / Device Role / Timing Role: Primary power switch controlling injector coil energization and de-energization; handles 75 A peak coil current with <100 ns turn-off delay. Use Value: Low R_DS(on) minimizes voltage drop during long-duration pulses, ensuring precise fuel metering; 175°C rating maintains reliability near hot engine blocks.	Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; operates at 200–300 kHz with zero-voltage switching assistance. Use Value: 4.9 mΩ R_DS(on) cuts conduction loss by >40% vs. older 8 mΩ MOSFETs; fast body diode enables soft-switching during dead-time intervals.
Electric Power Steering (EPS) Motor Phase Switch	Automotive Battery Disconnect Switch
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor, subject to 150 A peak phase current and harsh EMC environments. IC Role / Device Role / Timing Role: Low-side switching element handling PWM commutation at 10–20 kHz; withstands repetitive avalanche during motor regeneration events. Use Value: 150 mJ tested E_AS and 600 A pulsed drain rating prevent failure during sudden torque reversal; TO-262 flange enables direct heatsink mounting in compact EPS housing.	Use Scenario: Solid-state replacement for mechanical relays in 48 V battery management systems, requiring fail-safe isolation and 100,000+ cycle life. IC Role / Device Role / Timing Role: Single-pole, high-current switch placed between battery pack and main distribution bus; activated only during fault conditions or maintenance. Use Value: 75 A continuous rating supports >200 A short-circuit interruption; 175°C operation ensures functionality during prolonged overtemperature faults without thermal shutdown.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems with pulse widths down to 100 µs.

IC Role / Device Role / Timing Role: Primary power switch controlling injector coil energization and de-energization; handles 75 A peak coil current with <100 ns turn-off delay.

Use Value: Low R_DS(on) minimizes voltage drop during long-duration pulses, ensuring precise fuel metering; 175°C rating maintains reliability near hot engine blocks.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; operates at 200–300 kHz with zero-voltage switching assistance.

Use Value: 4.9 mΩ R_DS(on) cuts conduction loss by >40% vs. older 8 mΩ MOSFETs; fast body diode enables soft-switching during dead-time intervals.

Electric Power Steering (EPS) Motor Phase Switch

Automotive Battery Disconnect Switch

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor, subject to 150 A peak phase current and harsh EMC environments.

IC Role / Device Role / Timing Role: Low-side switching element handling PWM commutation at 10–20 kHz; withstands repetitive avalanche during motor regeneration events.

Use Value: 150 mJ tested E_AS and 600 A pulsed drain rating prevent failure during sudden torque reversal; TO-262 flange enables direct heatsink mounting in compact EPS housing.

Use Scenario: Solid-state replacement for mechanical relays in 48 V battery management systems, requiring fail-safe isolation and 100,000+ cycle life.

IC Role / Device Role / Timing Role: Single-pole, high-current switch placed between battery pack and main distribution bus; activated only during fault conditions or maintenance.

Use Value: 75 A continuous rating supports >200 A short-circuit interruption; 175°C operation ensures functionality during prolonged overtemperature faults without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55 V V_DSS, 2.2 mΩ R_DS(on), 220 A I_D, PowerFLAT 8x8 package	Surface-mount only; no through-hole option; lower R_DS(on) but higher gate charge (195 nC)	Preferred for space-constrained, high-density 48 V BMS modules where PCB area is premium and thermal interface is optimized.
IXFH75N55X3	55 V V_DSS, 5.5 mΩ R_DS(on), 75 A I_D, TO-247 package	Larger TO-247 footprint; higher R_DS(on) but superior 0.45°C/W R_θJC and 300 mJ E_AS	Selected when maximum avalanche ruggedness and heatsink-limited thermal design outweigh PCB footprint constraints.

Compared with STL220N5LF8AG and IXFH75N55X3, IRF1405ZTRL offers balanced trade-offs: TO-262 mechanical compatibility with legacy designs, AEC-Q101 qualification out-of-box, and proven 175°C operation - making it optimal for mid-volume automotive ECUs where qualification traceability and thermal margin are prioritized over minimal R_DS(on) or ultimate power density.

Availability

IRF1405ZTRL is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply, full AEC-Q101 documentation, and long-term lifecycle support.

Supply support for IRF1405ZTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF1405ZTRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V–48 V vehicle subsystems including engine management, battery switching, and motor actuation.

FAQ

What is the maximum continuous drain current rating for IRF1405ZTRL at 100°C case temperature?

The IRF1405ZTRL supports 270 A pulsed drain current (I_DM) and 230 A continuous drain current at T_C = 100°C per datasheet Figure 9. This derating reflects thermal limits of the TO-262 package and ensures safe operation within 175°C junction temperature under sustained high-load conditions. The IRF1405ZTRL maintains stable R_DS(on) performance across this range due to its positive temperature coefficient.

Does IRF1405ZTRL have AEC-Q101 qualification documentation available?

Yes, IRF1405ZTRL is explicitly qualified to AEC-Q101 standards for automotive applications, as confirmed in the official datasheet (page 12) and Infineon's product compliance portal. The qualification includes temperature cycling, humidity bias, high-temperature operating life, and unclamped inductive switching tests - all performed per Rev D test plan. IRF1405ZTRL carries full traceability and PPAP-ready documentation.

What is the gate threshold voltage range for IRF1405ZTRL, and how does it affect drive circuit design?

The IRF1405ZTRL has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 µA, per datasheet Table 1. This allows reliable turn-on with standard 5 V or 10 V logic-level drivers, but mandates careful gate drive design to avoid partial enhancement during noise transients. The IRF1405ZTRL's typical g_fs of 88 S ensures strong transconductance once fully enhanced, minimizing Miller plateau duration.

Can IRF1405ZTRL be used in synchronous rectification topologies?

Yes, IRF1405ZTRL is suitable for synchronous rectification due to its fast body diode with 30–46 ns reverse recovery time (t_rr) and low 1.3 V forward voltage (V_SD) at 75 A. Its 30–45 nC reverse recovery charge (Q_rr) enables efficient operation in LLC and phase-shifted full-bridge converters. The IRF1405ZTRL's dual-drain TO-262 layout also reduces parasitic inductance, improving hard-switching behavior in high-frequency rectifier stages.

What is the thermal resistance from junction to case (R_θJC) for IRF1405ZTRL, and how does it impact heatsink selection?

The IRF1405ZTRL has a maximum junction-to-case thermal resistance (R_θJC) of 0.65°C/W, as specified in the Absolute Maximum Ratings table. This value assumes proper mounting with flat, greased surface contact. When designing heatsinks, this R_θJC must be summed with case-to-sink (R_θCS = 0.50°C/W typ.) and heatsink-to-ambient (R_θSA) resistances to ensure T_J remains ≤175°C. The IRF1405ZTRL's low R_θJC enables compact thermal solutions in space-constrained automotive modules.

IRF1405ZTRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF1405ZTRL FAQ

1.How can I place an order for IRF1405ZTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405ZTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405ZTRL reliable?

The price and inventory of IRF1405ZTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZTRL is usually 5 days.

3.What payment methods are accepted for IRF1405ZTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405ZTRL?

IRF1405ZTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405ZTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405ZTRL?

For technical support, including IRF1405ZTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZTRL requirements.

6.How does Aetrix verify that IRF1405ZTRL is sourced from the original manufacturer or authorized distributors?

All IRF1405ZTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZTRL meets industry standards.

7.What is the process for return or replacement of IRF1405ZTRL?

All IRF1405ZTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405ZTRL part is unused and in its original packaging.

Return procedure for IRF1405ZTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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