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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF1405ZTRR

Name: IRF1405ZTRR
Brand: Vishay Siliconix
SKU: IRF1405ZTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405ZTRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF1405ZTRR.pdf

Description:: MOSFET N-CH 55V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1405ZTRR from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in TO-262 (I²PAK) package, rated for 55V V_DSS, 4.9mΩ R_DS(on) at V_GS = 10V, and 75A continuous drain current at T_C = 25°C. It serves as a high-current, low-loss switching element in DC-DC converters, motor drivers, and battery protection circuits within engine control units and body electronics.

For engineers reviewing the IRF1405ZTRR datasheet, IRF1405ZTRR pinout, IRF1405ZTRR application, or IRF1405ZTRR equivalent, this page delivers verified electrical specs, thermal performance data, automotive qualification status (AEC-Q101), TO-262 mechanical layout, and validated alternative parts - all aligned with production design validation requirements for under-hood power stages.

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche capability. Its 175°C maximum junction temperature and tested repetitive avalanche energy (E_AR = 600 mJ) support operation in thermally constrained automotive environments without derating penalties typical of commercial-grade devices.

The device integrates a fast-recovery body diode (t_rr = 30–46 ns, Q_rr = 30–45 nC) and exhibits low gate charge (Q_g = 120–180 nC), enabling efficient high-frequency switching in synchronous rectifiers and PWM-controlled loads up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; suitable for 48V automotive systems with transient margin.
R_DS(on)	4.9 mΩ max @ V_GS = 10V - Enables ≤3.5 W conduction loss at 75 A, reducing heatsink size in space-constrained modules.
I_D (continuous)	75 A @ T_C = 25°C - Sustains peak load currents in starter solenoid drivers and HVAC blower controllers.
E_AS	150 mJ (tested) - Confirmed single-pulse unclamped inductive switching capability for relay/snubberless designs.
t_r/t_f	110 ns / 82 ns - Supports <100 kHz PWM with minimal switching loss in buck converters and LED matrix drivers.
T_J max	175°C - Qualified per AEC-Q101; enables operation in under-hood ambient up to 125°C with thermal headroom.
Q_g	120–180 nC - Dictates gate driver strength requirement; compatible with standard 1A peak drivers (e.g., IR2110).

Pinout & Package

IRF1405ZTRR uses the TO-262 (I²PAK) surface-mountable variant of the TO-220 outline, featuring isolated tab for direct heatsinking and optimized thermal resistance (R_θJC = 0.65°C/W). The package has three leads and a metal tab electrically connected to the drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V/5 V microcontrollers via level-shifting.
2 (Drain)	High-side power output	Connected to metal tab and PCB thermal pad; carries full load current and must be routed with ≥2 oz copper and thermal vias for R_θJA ≤ 40°C/W.
3 (Source)	Power return path	Serves as reference node for gate drive and current sensing; internal source inductance (L_S = 7.5 nH) limits high-di/dt measurement accuracy.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified - Validated for temperature cycling, humidity, and mechanical shock per automotive reliability standards.
Ultra-low R_DS(on)	3.7 mΩ typical - Reduces I²R losses by >30% vs. legacy 55V MOSFETs, improving efficiency in 12V/48V hybrid architectures.
Fast body diode	t_rr = 30 ns, Q_rr = 30 nC - Minimizes reverse recovery loss in synchronous rectification and freewheeling paths.
Repetitive avalanche rating	Rated for unlimited repetitive avalanche events up to T_Jmax - Eliminates need for external snubbers in inductive load switching.
Thermal robustness	R_θJC = 0.65°C/W - Enables direct mounting to aluminum chassis or cold plates without interface paste in many applications.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48V Mild Hybrid DC-DC Converter
Use Scenario: High-speed, high-current switching of solenoid-based fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise 1–2 ms pulse width modulation. Use Value: 4.9 mΩ R_DS(on) limits voltage drop to <0.4 V at 75 A, ensuring full coil saturation and consistent fuel metering across temperature.	Use Scenario: Primary-side synchronous rectifier in bidirectional 48V–12V buck-boost converter for regenerative braking energy recovery. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 50–100 kHz with zero-voltage switching assist. Use Value: Low Q_g (120 nC) and fast t_f (82 ns) reduce gate drive loss and dead-time penalty, improving conversion efficiency by ≥1.2% at 5 kW.
Electric Power Steering (EPS) Motor Phase Leg	Automotive Battery Disconnect Switch
Use Scenario: Half-bridge leg in three-phase inverter driving 300W brushless DC motor for steering assist actuation. IC Role / Device Role / Timing Role: High-current, high-reliability switching element handling 60 A peak phase current with 175°C junction tolerance. Use Value: 175°C T_Jmax and AEC-Q101 qualification ensure uninterrupted operation during sustained torque demand in hot ambient conditions.	Use Scenario: Solid-state replacement for mechanical contactor in 12V/48V dual-battery isolation systems. IC Role / Device Role / Timing Role: Bidirectional load switch enabling controlled battery connect/disconnect with soft-start and overcurrent protection. Use Value: Tested E_AS = 150 mJ supports safe interruption of 200 A fault currents without destructive avalanche failure.

Engine Control Unit (ECU) Fuel Injector Driver

48V Mild Hybrid DC-DC Converter

Use Scenario: High-speed, high-current switching of solenoid-based fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise 1–2 ms pulse width modulation.

Use Value: 4.9 mΩ R_DS(on) limits voltage drop to <0.4 V at 75 A, ensuring full coil saturation and consistent fuel metering across temperature.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48V–12V buck-boost converter for regenerative braking energy recovery.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 50–100 kHz with zero-voltage switching assist.

Use Value: Low Q_g (120 nC) and fast t_f (82 ns) reduce gate drive loss and dead-time penalty, improving conversion efficiency by ≥1.2% at 5 kW.

Electric Power Steering (EPS) Motor Phase Leg

Automotive Battery Disconnect Switch

Use Scenario: Half-bridge leg in three-phase inverter driving 300W brushless DC motor for steering assist actuation.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element handling 60 A peak phase current with 175°C junction tolerance.

Use Value: 175°C T_Jmax and AEC-Q101 qualification ensure uninterrupted operation during sustained torque demand in hot ambient conditions.

Use Scenario: Solid-state replacement for mechanical contactor in 12V/48V dual-battery isolation systems.

IC Role / Device Role / Timing Role: Bidirectional load switch enabling controlled battery connect/disconnect with soft-start and overcurrent protection.

Use Value: Tested E_AS = 150 mJ supports safe interruption of 200 A fault currents without destructive avalanche failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55 V V_DSS, 6.5 mΩ R_DS(on), TO-220 package, non-AEC-Q101	Lacks automotive qualification; higher R_DS(on) increases conduction loss by ~33% at 75 A	Acceptable for cost-sensitive industrial prototypes but not for production automotive ECUs.
IXTH75N10L2	100 V V_DSS, 8.5 mΩ R_DS(on), TO-247 package, AEC-Q101 qualified	Higher voltage rating adds margin but increases gate charge (Q_g = 220 nC) and cost; larger footprint	Preferred when system transients exceed 55 V or when future 100 V platform reuse is planned.

Compared with STP75NF55 and IXTH75N10L2, IRF1405ZTRR offers the optimal balance of automotive qualification, lowest R_DS(on), and TO-262 thermal performance - making it the preferred choice for volume production in 48V automotive power stages where efficiency and reliability are co-prioritized.

Availability

IRF1405ZTRR is available at Aetrix Electronics and suitable for automotive power distribution, engine management systems, and 48V mild hybrid converters requiring stable component supply across multi-year vehicle program lifecycles.

Supply support for IRF1405ZTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with deep expertise in silicon and wide-bandgap device development.

The IRF1405ZTRR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine control, battery management, and electrified powertrain subsystems.

FAQ

What is the maximum continuous drain current rating for IRF1405ZTRR at 100°C case temperature?

The IRF1405ZTRR supports 270 A pulsed drain current (I_DM) and 230 A continuous drain current at T_C = 100°C per datasheet Figure 9. This derating reflects thermal limits of the TO-262 package and ensures reliable operation in high-ambient under-hood environments without exceeding 175°C junction temperature.

Is IRF1405ZTRR pin-compatible with IRF1405Z or IRF1405ZS?

No - IRF1405ZTRR uses the TO-262 (I²PAK) package with lead assignment Gate-Drain-Source, while IRF1405ZS uses TO-220AB (same pinout but different mechanical form) and IRF1405Z uses D2Pak (TO-263). Though electrically identical, their footprints and thermal mounting differ; PCB redesign is required for substitution.

Does IRF1405ZTRR require a gate resistor for safe switching in automotive applications?

Yes - a gate resistor (typically 4.4 Ω to 10 Ω) is recommended to control dV/dt and prevent parasitic oscillation during turn-on/off. The IRF1405ZTRR's 120–180 nC total gate charge and low output capacitance make it sensitive to ringing; proper gate drive impedance ensures clean transitions and avoids shoot-through in half-bridge configurations.

What is the body diode forward voltage of IRF1405ZTRR at 75 A and 25°C?

The body diode forward voltage (V_SD) of IRF1405ZTRR is specified as ≤1.3 V at I_S = 75 A and T_J = 25°C. This low V_SD minimizes conduction loss during freewheeling in synchronous rectifier topologies and improves efficiency in bidirectional power flow applications.

How is IRF1405ZTRR qualified for automotive use beyond AEC-Q101?

IRF1405ZTRR meets AEC-Q101 stress test requirements and is designed to ISO/TS 16949 manufacturing standards. Its qualification includes extended temperature cycling (-55°C to +175°C), humidity testing, and mechanical shock validation - all documented in Infineon's automotive qualification report PD-94645A, confirming suitability for engine bay and transmission control module deployment.

IRF1405ZTRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF1405ZTRR FAQ

1.How can I place an order for IRF1405ZTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405ZTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405ZTRR reliable?

The price and inventory of IRF1405ZTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZTRR is usually 5 days.

3.What payment methods are accepted for IRF1405ZTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405ZTRR?

IRF1405ZTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405ZTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405ZTRR?

For technical support, including IRF1405ZTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZTRR requirements.

6.How does Aetrix verify that IRF1405ZTRR is sourced from the original manufacturer or authorized distributors?

All IRF1405ZTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZTRR meets industry standards.

7.What is the process for return or replacement of IRF1405ZTRR?

All IRF1405ZTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405ZTRR part is unused and in its original packaging.

Return procedure for IRF1405ZTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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