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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2804STRLPBF

Name: IRF2804STRLPBF
Brand: Infineon Technologies
SKU: IRF2804STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2804STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF2804STRLPBF.pdf

Description:: MOSFET N-CH 40V 75A D2PAK

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Product details

Overview

IRF2804STRLPBF from Infineon Technologies (formerly International Rectifier) is a 40V, 75A N-channel D2PAK-3L power MOSFET with 2.0 mΩ R_DS(on) at V_GS = 10V, 175°C junction rating, and rated repetitive avalanche energy of 540 mJ. It serves as a primary high-current switching element in DC-DC synchronous rectifiers, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRF2804STRLPBF datasheet, IRF2804STRLPBF pinout, IRF2804STRLPBF application, or IRF2804STRLPBF equivalent, key selection criteria include its ultra-low on-resistance for conduction loss minimization, fast switching (t_r = 120 ns, t_f = 130 ns), body diode recovery performance (Q_rr = 67–100 nC), and thermal robustness under pulsed load conditions.

Technical Context

This HEXFET® device employs advanced silicon processing to achieve 1.5 mΩ typical R_DS(on) at 25°C and maintains stable on-resistance up to 175°C junction temperature (R_DS(on) normalized to ~1.8× at T_J = 150°C). Its gate charge profile (Q_g = 160–240 nC, Q_gd = 66–99 nC) supports efficient high-frequency PWM control in hard-switched topologies.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at I_S = 75 A) and controlled reverse recovery (t_rr = 56–84 ns, Q_rr = 67–100 nC), enabling reliable operation in freewheeling and synchronous rectification roles without external Schottky supplementation in many 48V-class systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; defines use in ≤40V bus systems (e.g., 12V/24V/48V DC rails).
R_DS(on) max	2.0 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.1 W conduction loss at 75 A, critical for high-efficiency power stages.
I_D continuous	75 A @ T_C = 25°C - Sustained current capability when mounted on heatsink; derates to 108 A pulsed (I_DM).
E_AS	540 mJ - Single-pulse avalanche energy rating; allows unclamped inductive switching survival in motor drive fault events.
Q_g	160–240 nC - Total gate charge determines driver strength requirement; impacts switching loss and gate drive loop design.
t_r/t_f	120 ns / 130 ns - Fast edge rates reduce transition losses but require careful PCB layout to suppress EMI and ringing.
θ_JC	0.50 °C/W - Junction-to-case thermal resistance enables precise heatsink sizing; requires flat, greased mounting interface.

Pinout & Package

IRF2804STRLPBF uses the surface-mount D2PAK-3L (TO-263-3) package with exposed drain pad for thermal and electrical connection. The package dimensions comply with JEDEC MO-211AB standard and require 1"² FR-4 PCB copper area for rated power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to power ground or source of complementary switch; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires 10 V for full enhancement; sensitive to ESD and ringing due to Q_gd coupling.
Pin 3 (Drain)	Power output (D)	Exposed metal pad (Drain); electrically and thermally connected to PCB copper pour; must be isolated from other nets.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.5 mΩ typ. at 25°C - Reduces I²R losses by >30% vs. legacy 40V MOSFETs, directly improving system efficiency at high load.
175°C operating junction	Rated continuous operation up to 175°C - Supports compact thermal design in sealed enclosures or high-ambient environments (e.g., automotive under-hood).
Repetitive avalanche rated	540 mJ single-pulse, validated per Fig. 12a–12b - Eliminates need for external clamping in inductive load switching, simplifying protection circuitry.
Fast body diode	t_rr = 56–84 ns, Q_rr = 67–100 nC - Minimizes reverse recovery loss and EMI during commutation, enabling higher-frequency operation in synchronous rectifiers.
Lead-free D2PAK-3L	RoHS-compliant, halogen-free package - Meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), suitable for standard reflow profiles.

Applications

DC-DC Synchronous Rectifier

Brushless DC Motor Inverter

Use Scenario: Secondary-side switch in 48V input, 12V output isolated buck-derived converter for telecom power shelves.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode; switched at 200–500 kHz with dead-time-controlled gate drive.

Use Value: Achieves >97% efficiency at 60 A output by eliminating 0.4–0.5 V diode drop; reduces heat sink volume by 40% vs. diode solution.

Use Scenario: Low-side switch in three-phase BLDC inverter driving 1.5 kW HVAC compressor.

IC Role / Device Role / Timing Role: Phase-leg low-side power switch; commutated at ≤20 kHz with active freewheeling via body diode.

Use Value: Body diode Q_rr < 100 nC ensures minimal shoot-through risk and low EMI during 100 A peak phase currents.

Industrial UPS Half-Bridge

Automotive 48V Starter-Generator

Use Scenario: High-current leg in 48V battery-backed UPS inverter delivering 3 kVA sinusoidal output.

IC Role / Device Role / Timing Role: Hard-switched half-bridge switch; operated with 100 ns dead time and 160 nC gate drive capability.

Use Value: R_DS(on) ≤ 2.0 mΩ limits conduction loss to <1.2 W at 70 A RMS, enabling air-cooled design in 1U chassis.

Use Scenario: Crank-assist power stage in 48V mild hybrid vehicle, handling 150 A peak during engine start.

IC Role / Device Role / Timing Role: High-current bidirectional switch in dual-active-bridge topology; subjected to repetitive avalanche during regenerative braking.

Use Value: Rated 540 mJ E_AS and 175°C T_J allow safe operation under ISO 16750-2 pulse 4b load dump transients without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 1.45 mΩ typ., Q_g = 195 nC, DFN8 5×6 mm package, no leaded option	Requires PCB-level thermal vias instead of exposed pad; unsuitable for through-hole prototyping or heatsink mounting	Select when board space is constrained and automated assembly supports DFN; avoid if mechanical mounting or manual rework is required.
IXTH75N40L2	R_DS(on) = 2.2 mΩ, TO-247 package, 150°C T_J, E_AS = 420 mJ	Larger footprint and lower thermal performance (θ_JC = 0.45°C/W only with TO-247 heatsink interface)	Prefer for legacy TO-247 socket compatibility or where higher surge current margin outweighs efficiency loss.

Compared with STL220N4F7AG and IXTH75N40L2, IRF2804STRLPBF offers optimal balance of ultra-low R_DS(on), proven D2PAK thermal reliability, and industry-standard footprint-making it preferred for production-grade 48V power conversion where manufacturability and thermal predictability are prioritized over minimal package size or legacy form factor.

Availability

IRF2804STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, 48V DC-DC converters, and automotive starter-generator systems requiring stable component supply and long-term lifecycle support.

Supply support for IRF2804STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

IRF2804STRLPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and automotive power conversion systems demanding low conduction loss and rugged transient handling.

FAQ

What is the maximum recommended gate drive voltage for IRF2804STRLPBF?

The absolute maximum V_GS rating is ±20 V, but the device achieves full enhancement at V_GS = 10 V. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and Miller-induced shoot-through risk. Recommended operating range is 10–12 V for optimal trade-off between on-resistance, switching speed, and reliability.

Can IRF2804STRLPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (normalized to ~1.8× at 150°C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and shared source inductance minimization. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the body diode suitable for continuous freewheeling in high-frequency PWM?

Yes-the body diode is characterized for repetitive operation with t_rr = 56–84 ns and Q_rr = 67–100 nC at T_J = 25°C. At 100 kHz and 75 A peak, reverse recovery loss remains below 0.8 W. However, ensure gate drive timing avoids cross-conduction, and verify diode SOA in your specific inductive load waveform using Fig. 15 and 16.

What thermal interface material is recommended for the D2PAK drain pad?

A thin, uniform layer (25–50 µm) of non-silicone-based thermal grease (e.g., Dow Corning TC-5022 or Parker Chomerics T-grease 3350) is recommended. Avoid silicone greases that may outgas and contaminate nearby components. For production, solder paste reflow onto 1"² FR-4 copper with 6–8 thermal vias (0.3 mm diameter, 0.8 mm pitch) provides lowest θ_JA (40°C/W).

IRF2804STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF2804STRLPBF FAQ

1.How can I place an order for IRF2804STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2804STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2804STRLPBF reliable?

The price and inventory of IRF2804STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2804STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF2804STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2804STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2804STRLPBF?

IRF2804STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2804STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2804STRLPBF?

For technical support, including IRF2804STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2804STRLPBF requirements.

6.How does Aetrix verify that IRF2804STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF2804STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2804STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF2804STRLPBF?

All IRF2804STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2804STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2804STRLPBF part is unused and in its original packaging.

Return procedure for IRF2804STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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