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Infineon Technologies IRF2805SPBF

Part No.:
IRF2805SPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF2805SPBF.pdf
Description:
MOSFET N-CH 55V 135A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,286

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Product details

Overview

IRF2805SPBF from Infineon Technologies is a 55V, 4.7mΩ N-channel D2PAK (TO-262) HEXFET® Power MOSFET rated for 135A continuous drain current at 25°C, 96A at 100°C, and 700A pulsed current, designed for high-efficiency industrial motor drive inverters and DC-DC power stages where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IRF2805SPBF datasheet, IRF2805SPBF pinout, IRF2805SPBF application, or IRF2805SPBF equivalent, key selection criteria include its 175°C junction rating, 380mJ single-pulse avalanche energy, 150nC typical gate charge, 5110pF input capacitance, and thermal resistance of 0.75°C/W junction-to-case - all essential for thermal design and switching loss estimation in hard-switched topologies.

Technical Context

This device employs advanced planar HEXFET® processing to achieve ultra-low RDS(on) (3.9–4.7mΩ) while maintaining fast switching (tr = 120ns, tf = 110ns) and full-rated repetitive avalanche operation up to Tjmax = 175°C. Its body diode exhibits VSD = 1.3V at 104A and trr = 80–120ns, enabling reliable freewheeling in bridge configurations.

The MOSFET supports gate drive with ±20V VGS tolerance and features tightly controlled threshold voltage (2.0–4.0V), high transconductance (91S), and low output capacitance (Coss = 860pF at VDS = 44V), making it suitable for synchronous rectification and high-frequency PWM control in 48V industrial systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 55V - Maximum blocking voltage before avalanche onset; defines usable bus voltage range in 48V systems with margin.
RDS(on) 3.9–4.7mΩ @ VGS = 10V, ID = 104A - Directly determines conduction loss (Pcond ≈ I²×R) and heatsink sizing.
ID (25°C) 135A - Continuous current capability at case temperature ≤25°C; limited by package thermal resistance (0.75°C/W).
EAS 380mJ (typical), 1220mJ (6σ tested) - Enables unclamped inductive switching without failure under defined L·di/dt conditions.
Qg 150–230nC - Governs gate driver power requirement and switching transition time in hard-switched converters.
Ciss 5110pF @ VGS = 0V - Impacts high-frequency gate drive impedance matching and EMI filter design.
tr/tf 120ns/110ns @ ID = 104A, RG = 2.5Ω - Defines minimum practical switching period and associated switching loss.

Pinout & Package

D2PAK (TO-262) package with isolated tab (drain-connected), surface-mount footprint, and 1.6mm lead-to-case clearance for 300°C soldering.

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) Main current path output / heat sink interface Electrically connected to exposed copper tab; requires insulated mounting or direct thermal coupling to heatsink.
Source Reference node for gate drive and current sensing Low-inductance source connection critical for stable gate control and accurate shunt-based current monitoring.
Gate Control terminal for channel modulation High-impedance input requiring low-impedance gate driver (<2.5Ω series R) to manage 150nC charge and minimize Miller effect.

Key Features

Feature Design Value
Ultra-low RDS(on) 3.9mΩ typ. enables <1.5W conduction loss at 60A, reducing heatsink mass and system footprint in motor drives.
175°C maximum junction temperature Permits sustained operation in sealed enclosures or high-ambient environments without derating below 100°C case temp.
Repetitive avalanche rated Validated up to Tjmax with 100% production testing at 1220mJ, eliminating need for external snubbers in inductive load switching.
Fast body diode recovery trr = 80–120ns and Qrr = 290–430nC reduce reverse recovery losses and EMI in half-bridge freewheeling paths.

Applications

Industrial Motor Inverter 48V DC-DC Converter

Use Scenario: High-current phase-leg switching in 3-phase BLDC motor drives for HVAC compressors and conveyor systems.

IC Role / Device Role / Timing Role: Main power switch in low-side or high-side position; operates at 8–20kHz PWM with synchronous rectification.

Use Value: 4.7mΩ RDS(on) cuts conduction loss by >35% vs. legacy 8mΩ devices, directly improving system efficiency from 94% to 96.2% at 10kW.

Use Scenario: Primary-side switch in isolated full-bridge or phase-shifted ZVS DC-DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Hard-switched primary FET handling 135A peak currents; coordinated with zero-voltage switching timing.

Use Value: 1220mJ 6σ avalanche rating allows safe operation during transient overloads without clamping circuits, reducing BOM count by two TVS diodes per leg.

Solar MPPT Charge Controller EV Onboard Charger Stage

Use Scenario: High-current buck/boost stage regulating PV array output into battery banks under variable irradiance.

IC Role / Device Role / Timing Role: Synchronous rectifier in bidirectional DC-DC stage; switched at 100–200kHz with precise gate timing.

Use Value: 5110pF Ciss and 210pF Crss enable predictable gate drive behavior across wide VDS swing, minimizing shoot-through risk during dead-time transitions.

Use Scenario: Secondary-side synchronous rectification in 6.6kW OBC AC/DC front-end and DC/DC isolation stages.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter output rectification; handles 104A continuous RMS current.

Use Value: 0.75°C/W RθJC allows direct mounting to cold plate, achieving 175°C Tj at only 78°C case temp - enabling compact liquid-cooled module integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP130N5F6 RDS(on) = 4.2mΩ, Qg = 132nC, Ciss = 4700pF, same D2PAK package Lower gate charge reduces driver loss but slightly higher RDS(on) increases conduction loss at >80A Preferred for higher-frequency (>150kHz) designs where switching loss dominates; less suitable for 48V/100A+ motor drives.
IXTH120N50L2 RDS(on) = 5.2mΩ, VDSS = 500V, TO-247 package, avalanche-tested to 1000mJ Higher voltage rating and larger package increase layout area and thermal inertia; not drop-in compatible Only viable if system requires >100V blocking or legacy TO-247 footprint; introduces 22% higher conduction loss at 104A.

Compared with STP130N5F6 and IXTH120N50L2, IRF2805SPBF delivers the lowest RDS(on) in D2PAK format for 55V systems, enabling highest power density in space-constrained motor drives while maintaining production-proven avalanche ruggedness at 1220mJ.

Availability

IRF2805SPBF is available at Aetrix Electronics and suitable for industrial motor drives, 48V DC-DC converters, and solar MPPT charge controllers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF2805SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial sensors with ISO/TS 16949 and ISO 14001 certified manufacturing.

IRF2805SPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness industrial power conversion where low on-resistance, fast switching, and guaranteed avalanche performance are mandatory.

FAQ

Is IRF2805SPBF RoHS-compliant and lead-free?

Yes, IRF2805SPBF is fully RoHS-compliant and lead-free per EU Directive 2011/65/EU, with Pb-free terminations and halogen-free molding compound. The "SPbF" suffix explicitly denotes lead-free packaging, verified through material declarations and XRF testing per IPC-J-STD-020.

What is the maximum recommended gate resistor value for reliable switching?

For hard-switched operation at 104A, the maximum recommended gate resistor is 2.5Ω (as specified in the datasheet switching test conditions). Exceeding this value increases turn-on/off times, raising switching losses and risking thermal runaway during avalanche events due to prolonged high-VDS × ID overlap.

Can IRF2805SPBF be paralleled for higher current capacity?

Yes, IRF2805SPBF supports current sharing when paralleled, thanks to its positive RDS(on) temperature coefficient above 25°C. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≤2.5Ω) to ensure simultaneous turn-on and prevent current hogging.

Does the body diode support continuous conduction mode (CCM) in synchronous rectifiers?

Yes, the intrinsic body diode is rated for continuous source current (IS) up to 104A and pulsed source current (ISM) up to 700A. Its 1.3V forward drop at 104A and 80–120ns reverse recovery time make it suitable for CCM operation in 48V synchronous buck converters up to 200kHz.

IRF2805SPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
135A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 104A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
230 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5110 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF2805SPBF FAQ

1.How can I place an order for IRF2805SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2805SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2805SPBF reliable?

The price and inventory of IRF2805SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2805SPBF is usually 5 days.

3.What payment methods are accepted for IRF2805SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2805SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2805SPBF?

IRF2805SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2805SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2805SPBF?

For technical support, including IRF2805SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2805SPBF requirements.

6.How does Aetrix verify that IRF2805SPBF is sourced from the original manufacturer or authorized distributors?

All IRF2805SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2805SPBF meets industry standards.

7.What is the process for return or replacement of IRF2805SPBF?

All IRF2805SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2805SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2805SPBF part is unused and in its original packaging.

Return procedure for IRF2805SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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